SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BSS123A ISSUE 4 – APRIL 1998 FEATURES * BVDSS = 100V * Low Threshold S D PARTMARKING DETAIL – SAA G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage Drain-Gate Voltage V DS 100 V V DGR 100 Continuous Drain Current at T amb=25°C V ID 170 mA Pulsed Drain Current I DM 680 mA Gate-Source Voltage V GS ± 20 V Power Dissipation at T amb=25°C P tot 360 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. Drain-Source Breakdown Voltage BV DSS 100 Gate-Source Threshold Voltage V GS(th) 0.5 Gate-Body Leakage Zero Gate Voltage Drain Current MAX. UNIT CONDITIONS. V I D=0.25mA, V GS=0V 2.0 V I D =1mA, V DS= V GS I GSS 50 nA V GS=± 20V, V DS=0V I DSS 500 nA V DS=100V, V GS=0V Static Drain-Source On-State Resistance (1) R DS(on) 6 10 Ω Ω V GS=10V, I D=170mA V GS=4.5V, I D=170mA Forward Transconductance(1)(2) g fs mS V DS=25V, I D=100mA Input Capacitance (2) C iss 25 pF Common Source Output Capacitance (2) C oss 9 pF Reverse Transfer Capacitance (2) C rss 4 pF Turn-On Delay Time (2)(3) t d(on) 10 ns Rise Time (2)(3) 10 ns Turn-Off Delay Time (2)(3) t d(off) 15 ns Fall Time (2)(3) 25 ns tr tf 80 V DS=25V, V GS=0V, f=1MHz V DD ≈30V, I D=280mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator