SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - NOVEMBER 1995 FCX593 ✪ C COMPLIMENTARY TO FMMT493 PARTMARKING DETAIL - P93 E B ABSOLUTE MAXIMUM RATINGS. C PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Base Current IB -200 mA Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 1 W -65 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Breakdown Voltages Cut-Off Currents Saturation Voltages SYMBOL MIN. MAX. UNIT CONDITIONS. V(BR)CBO -120 V IC=-100µ A V(BR)CEO -100 V IC=-10mA* V(BR)EBO -5 V IE=-100µ A ICBO -100 nA VCB=-100V IEBO -100 nA VEB=-4V ICES -100 nA VCES=-100V VCE(sat) -0.2 -0.3 V V IC=-250mA,IB=-25mA* IC=-500mA IB=-50mA* VBE(sat) -1.1 V IC=-500mA,IB=-50mA* -1.0 V Base-Emitter Turn-on Voltage VBE(on) Static Forward Current Transfer Ratio hFE 100 100 100 50 300 50 Transition Frequency fT Output Capacitance Cobo MHz IC=-50mA, VCE=-10V f=100MHz 5 pF *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical Characteristics graphs see FMMT593 datasheet 3 - 94 IC=-1mA, VCE=-5V* IC=-1mA, VCE=-5V IC=-250mA,VCE=-5V* IC=-500mA, VCE=-5V* IC=-1A, VCE=-5V* VCB=-10V, f=1MHz