SOT23 SILICON PLANAR LOW LEAKAGE COMMON CATHODE DIODE PAIR FLLD258 ISSUE 2 SEPTEMBER 1995 ✪ 1 2 1 3 2 3 SOT23 PART MARKING DETAIL D58 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Repetitive Peak Reverse Voltage VRRM VALUE 100 UNIT V Average Rectified Forward Current IF(AV) 250 mA Non-Repetitive Peak Forward Current (t=1µ s) IFSM 3.0 A Power Dissipation at Tamb = 25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL Reverse Current MIN. MAX. UNIT CONDITIONS. IR 3 5 µA nA VRRM=50V VRRM=100V, Tamb=150°C Reverse Recovery Time* trr 400 ns IF= IR=50 400mA Forward Recovery Time tfr 10 ns IF=10mA Diode Capacitance Cd 4 pF VR=1V, f=1MHz Forward Overshoot Voltage Vfr Typ 0.9 V IF=10mA, Rise time=5ns ± 20% Forward Voltage 1.4 V IF=-200mA VF *Time for IR to recover to 10% of IR peak For typical characteristics graphs see FLLD263 datasheet. 3 - 96 FLLD258 FLLD261 FLLD263 SOT23 SILICON PLANAR LOW LEAKAGE COMMON ANODE DIODE PAIR ISSUE 2 JANUARY 1996 FLLD263 ✪ DIODE PIN CONNECTION 1 2 1 TYPICAL CHARACTERISTICS 25 3 20 2 15 SOT23 PART MARKING DETAIL D63 10 5 0 3 ABSOLUTE MAXIMUM RATINGS. 0 20 40 60 80 VF - Forward Voltage (V) IR v VF 100 PARAMETER SYMBOL VALUE UNIT Repetitive Peak Reverse Voltage VRRM 100 V Average Rectified Forward Current IF(AV) 250 mA Non-Repetitive Peak Forward Current (t=1µ s) IFSM 3.0 A Power Dissipation at Tamb = 25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL Reverse Current MIN. MAX. UNIT CONDITIONS. IR 5 5 µA nA VRRM=100V VRRM=100V, Tamb=150°C Reverse Recovery Time* trr 400 ns IF= IR=50 400mA Forward Recovery Time tfr 10 ns IF=10mA Diode Capacitance Cd 4 pF VR=1V, f=1MHz Forward Overshoot Voltage Vfr Typ 0.9 V IF=10mA, Rise time=5ns ± 20% Forward Voltage 1.4 V IF=-200mA VF *Time for IR to recover to 10% of IR peak 3 - 99 3 - 98