SOT23 NPN SILICON PLANAR RF TRANSISTOR FMMTH10 ISSUE 2 NOVEMBER 1995 FEATURES * High fT=650MHz * Maximum capacitance 0.7pF * Low noise < 5dB at 500MHz TYPICAL CHARACTERISTICS 200 1.0 VCE=-10V -55°C 50 -55°C - (Volts) 100°C 0.6 PARTMARKING DETAIL 0.4 V 0.1 1 10 175°C 0 100 0.1 1 IC - (mA) IC - (mA) hFE v IC VBE(on)v IC 1500 100 10 UNIT 30 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 3 V Continuous Collector Current IC 25 mA Peak Pulse Current ICM 50 mA 330 mW -55 to +150 °C Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg PARAMETER SYMBOL MIN. UNIT CONDITIONS. 0.8 Collector-Base Breakdown Voltage V(BR)CBO 30 V IC=100µA, IE=0 - (pF) 1 VALUE VCES 0.6 Collector-Emitter Breakdown Voltage V(BR)CEO 25 V IC=1mA, IB=0 C 0.1 SYMBOL Collector-Emitter Voltage ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) 0.4 Emitter-Base Breakdown Voltage V(BR)EBO 3 V IE=10µA, IC=0 Collector Cut-Off Current ICBO 100 nA VCB=25V, IE=0 Emitter Cut-Off Current IEBO 100 nA VEB=2V,IC=0 0.5 V IC=4mA, IB=0.4mA 0.65 pF VCB=10V, IE=0 f=1MHz 0.95 V IC=4mA, VCE=10V 0.2 0 PARAMETER 1.0 1000 500 10 1.2 VCE=10V f=100MHz SOT23 ABSOLUTE MAXIMUM RATINGS. 0.2 0 3EZ 25°C 100°C h -Gain 150 f - (MHz) B 0.8 25°C E C VCE=-10V 175°C 100 FMMTH10 100 0 IC - (mA) 0.1 1 VCB- (Volts) fT v IC CCB v VCB 10 30 Collector-Emitter Saturation VCE(sat) Voltage Typ. 0.45 Common Base Feedback Capacitance Crb Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE 60 Transition Frequency fT 650 IC=4mA, VCE=10V* Collector Base Capacitance Ccb Collector Base Time Constant rbCc Noise Figure Nf MAX. Typ. 3 MHz IC=4mA, VCE=10V, f=100MHz 0.7 pF VCB=10V, IE=0, f=1MHz 9 ps IC=4mA, VCB=10V, f=31.8MHz 5 dB IC=2mA, VCE=5V f=500MHz, *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 182 3 - 181 SOT23 NPN SILICON PLANAR RF TRANSISTOR FMMTH10 ISSUE 2 NOVEMBER 1995 FEATURES * High fT=650MHz * Maximum capacitance 0.7pF * Low noise < 5dB at 500MHz TYPICAL CHARACTERISTICS 200 1.0 VCE=-10V -55°C 50 -55°C - (Volts) 100°C 0.6 PARTMARKING DETAIL 0.4 V 0.1 1 10 175°C 0 100 0.1 1 IC - (mA) IC - (mA) hFE v IC VBE(on)v IC 1500 100 10 UNIT 30 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 3 V Continuous Collector Current IC 25 mA Peak Pulse Current ICM 50 mA 330 mW -55 to +150 °C Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg PARAMETER SYMBOL MIN. UNIT CONDITIONS. 0.8 Collector-Base Breakdown Voltage V(BR)CBO 30 V IC=100µA, IE=0 - (pF) 1 VALUE VCES 0.6 Collector-Emitter Breakdown Voltage V(BR)CEO 25 V IC=1mA, IB=0 C 0.1 SYMBOL Collector-Emitter Voltage ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) 0.4 Emitter-Base Breakdown Voltage V(BR)EBO 3 V IE=10µA, IC=0 Collector Cut-Off Current ICBO 100 nA VCB=25V, IE=0 Emitter Cut-Off Current IEBO 100 nA VEB=2V,IC=0 0.5 V IC=4mA, IB=0.4mA 0.65 pF VCB=10V, IE=0 f=1MHz 0.95 V IC=4mA, VCE=10V 0.2 0 PARAMETER 1.0 1000 500 10 1.2 VCE=10V f=100MHz SOT23 ABSOLUTE MAXIMUM RATINGS. 0.2 0 3EZ 25°C 100°C h -Gain 150 f - (MHz) B 0.8 25°C E C VCE=-10V 175°C 100 FMMTH10 100 0 IC - (mA) 0.1 1 VCB- (Volts) fT v IC CCB v VCB 10 30 Collector-Emitter Saturation VCE(sat) Voltage Typ. 0.45 Common Base Feedback Capacitance Crb Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE 60 Transition Frequency fT 650 IC=4mA, VCE=10V* Collector Base Capacitance Ccb Collector Base Time Constant rbCc Noise Figure Nf MAX. Typ. 3 MHz IC=4mA, VCE=10V, f=100MHz 0.7 pF VCB=10V, IE=0, f=1MHz 9 ps IC=4mA, VCB=10V, f=31.8MHz 5 dB IC=2mA, VCE=5V f=500MHz, *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 182 3 - 181