NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FXT651 ISSUE 1 MARCH 94 FEATURES * 60 Volt VCEO * 2 Amps continuous current * Low saturation voltage * Ptot= 1 Watt B C E E-Line TO92 Compatible REFER TO ZTX651 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 6 A Continuous Collector Current IC 2 A Power Dissipation at Tamb =25°C Ptot 1 W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage TYP. MAX. UNIT CONDITIONS. 80 V IC=100µ A, IE=0 V(BR)CEO 60 V IC=10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µ A, IC=0 Collector Cut-Off Current ICBO 0.1 10 µA µA VCB=60V, IE=0 VCB=60V,T amb =100°C Emitter Cut-Off Current IEBO 0.1 µA VEB=4V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) 0.12 0.23 0.3 0.5 V V IC=1A, IB=100mA* IC=2A, IB=200mA* Base-Emitter Saturation Voltage VBE(sat) 0.9 1.25 V IC=1A, IB=100mA* Base-Emitter Turn-On Voltage VBE(on) 0.8 1 V IC=1A, VCE=2V* Static Forward Current hFE Transfer Ratio 70 100 80 40 200 200 170 80 Transition Frequency fT 140 175 Output Capacitance Cobo IC=50mA, VCE=2V* IC=500mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* 300 30 MHz IC=100mA, VCE=5V f=100MHz pF VCB=10V, f=1MHz *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% 3-47