SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - NOVEMBER 1995 FZT489 ✪ C COMPLEMENTARY TYPE PARTMARKING DETAIL FZT589 FZT489 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 1 A Peak Pulse Current ICM Base Current IB Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 4 A 200 mA 2 W -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Breakdown Voltages V(BR)CBO 50 MAX. V IC=100µA VCEO(sus) 30 V IC=10mA* V(BR)EBO 5 V IE=100µA ICBO 100 nA VCB=30V ICES 100 nA VCES=30V Emitter Cut-Off Current IEBO 100 nA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.3 0.6 V V IC=1A, IB=100mA* IC=2A, IB=200mA* Base-Emitter Saturation Voltage VBE(sat) 1.1 V IC=1A, IB=100mA* Base-Emitter Turn On Voltage VBE(on) 1.0 V IC=1A, VCE=2V* Static Forward Current Transfer Ratio hFE 100 100 60 20 Transition Frequency fT 150 Collector-Base Breakdown Voltage Cobo Collector Cut-Off Current IC=1mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* IC=4A, VCE=2V* 300 10 MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical characteristics graphs see FMMT449 datasheet 3 - 188