ZETEX FZTA64

SOT223 PNP SILICON PLANAR
DARLINGTON TRANSISTORS
ISSUE 5– MARCH 2001
✪
PARTMARKING DETAILS:
FZTA64
COMPLIMENTARY TYPE:
FZTA14
FZTA64
4
3
2
1
SOT223
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
V CBO
-30
V
V CEO
-30
V
Emitter-Base Voltage
V EBO
-10
V
Peak Pulse Current
I CM
-800
mA
Continuous Collector Current
IC
-500
mA
Peak Base Current
I BM
-200
mA
Power Dissipation at T amb=25°C
P tot
2
W
Operating and Storage Temperature Range
T j:T stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
Collector-Base Breakdown
Voltage
V (BR)CBO
Collector-Emitter
Breakdown Voltage
MAX.
UNIT
CONDITIONS.
-30
V
I C=-10 µ A, I E=0
V (BR)CEO
-30
V
I C=-10mA, I B=0*
Emitter-Base Breakdown
Voltage
V (BR)EBO
-10
V
I E=-10 µ A, I C=0
Collector Cut-Off
Current
I CBO
-100
nA
V CB=-30V, I E=0
Emitter Cut-Off Current
I EBO
-100
nA
V EB=-10V, I C=0
Collector-Emitter Saturation
Voltage
V CE(sat)
-1.5
V
I C=-100mA, I B=-0.1mA*
Base-Emitter
Saturation Voltage
V BE(sat)
-2.0
V
I C=-100mA, I B=-0.1mA*
Static Forward Current
Transfer Ratio
h FE
10K
20K
Transition
Frequency
fT
125
IC=-10mA, V CE=-5V
I C=-100mA, V CE=-5V*
MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
TBA
I C=-50mA, V CE=-5V
f=20MHz
FZTA64
TYPICAL CHARACTERISTICS
1.5
1.5
IC/IB=1000
1.0
VCE(sat) - (V)
VCE(sat) - (V)
+25° C
0.5
IC/IB=1000
0
1.0
-55 °C
+25 °C
+100 °C
0.5
0
1m
10m
100m
1
10
1m
1
VCE(sat) v IC
VCE(sat) v IC
10
2.1
VCE=5V
IC/IB=1000
+100 °C
VBE(sat) - (V)
hFE - Typical Gain
100m
IC - Collector Current (A)
60k
45k
10m
IC - Collector Current (A)
30k
+25 °C
15k
-55 °C
0
1m
1.4
0.7
-55 °C
+25 °C
+100 °C
0
10m
100m
10
1
1m
IC - Collector Current (A)
10m
100m
1
10
IC - Collector Current (A)
hFE v IC
VBE(sat) v IC
1
VCE=5V
IC - Collector Current (A)
VBE(on) - (V)
2.0
1.5
1.0
-55 °C
+25 °C
+100 °C
0.5
0
1m
10m
100m
1
10
0.1
DC
1s
100ms
10ms
1ms
100µs
0.01
1
10
IC - Collector Current (A)
VCE - Collector Emitter Voltage (V)
VBE(on) v IC
Safe Operating Area
TBA
100