MPSH10P 1.0 VCE=-10V VCE=-10V 175°C -55°C 0.8 100 VBE - (Volts) hFE -Gain 150 100°C 25°C 0.6 25°C 100°C 0.4 175°C -55°C 50 0.1 1 10 0.1 1 IC - (mA) IC - (mA) hFE v IC VBE(on) v IC 1500 VCE=10V f=100MHz 1000 10 100 500 0.1 1 10 100 E-Line TO92 Compatible PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 3 V IC 25 mA 1.2 Power Dissipation at Tamb=25°C Ptot 500 mW 1.0 Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) 0.6 0.4 0.2 0 B Continuous Collector Current 0.8 CCB - (pF) fT - (MHz) 0 100 C E ABSOLUTE MAXIMUM RATINGS. 0.2 0 MPSH10P ISSUE 4 FEB 94 FEATURES * High fT=650MHz min * Max. capacitance 0.7pF * Low noise <5dB at 500MHz APPLICATIONS * Keyless entry systems * Wideband instrumentation amplifiers * Telemetry * Wireless lans TYPICAL CHARACTERISTICS 200 NPN SILICON PLANAR RF TRANSISTOR 0 0.1 1 IC - (mA) VCB - (Volts) fT v IC CCB v VCB 10 30 PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 30 MAX. V IC=100µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 25 V IC=1mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO 3 V IE=10µA, IC=0 Collector Cut-Off Current ICBO 100 nA VCB=25V, IE=0 Emitter Cut-Off Current IEBO 100 nA VEB=2V,IC=0 Collector-Emitter Saturation Voltage VCE(sat) 0.5 V IC=4mA, IB=0.4mA Base-Emitter Turn-On Voltage VBE(on) 0.95 V IC=4mA, VCE=10V Static Forward Current Transfer Ratio hFE 60 Transition Frequency fT 650 MHz IC=4mA, VCE=10V f=100MHz Collector Base Capacitance Ccb 0.7 pF VCB=10V, IE=0, f=1MHz Collector Base Time Constant rbCc 9 ps VCB=10V, IC=4mA, f=31.8MHz Common-Base Feedback capacitance Crb 0.65 pF VCB=10V, IE=0, f=1MHz Noise Figure Nf 5 dB IC=2mA, VCE=5V, RS=50Ω, f=500MHz IC=4mA, VCE=10V* *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3-89 3-88 MPSH10P 1.0 VCE=-10V VCE=-10V 175°C -55°C 0.8 100 VBE - (Volts) hFE -Gain 150 100°C 25°C 0.6 25°C 100°C 0.4 175°C -55°C 50 0.1 1 10 0.1 1 IC - (mA) IC - (mA) hFE v IC VBE(on) v IC 1500 VCE=10V f=100MHz 1000 10 100 500 0.1 1 10 100 E-Line TO92 Compatible PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 3 V IC 25 mA 1.2 Power Dissipation at Tamb=25°C Ptot 500 mW 1.0 Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) 0.6 0.4 0.2 0 B Continuous Collector Current 0.8 CCB - (pF) fT - (MHz) 0 100 C E ABSOLUTE MAXIMUM RATINGS. 0.2 0 MPSH10P ISSUE 4 FEB 94 FEATURES * High fT=650MHz min * Max. capacitance 0.7pF * Low noise <5dB at 500MHz APPLICATIONS * Keyless entry systems * Wideband instrumentation amplifiers * Telemetry * Wireless lans TYPICAL CHARACTERISTICS 200 NPN SILICON PLANAR RF TRANSISTOR 0 0.1 1 IC - (mA) VCB - (Volts) fT v IC CCB v VCB 10 30 PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 30 MAX. V IC=100µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 25 V IC=1mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO 3 V IE=10µA, IC=0 Collector Cut-Off Current ICBO 100 nA VCB=25V, IE=0 Emitter Cut-Off Current IEBO 100 nA VEB=2V,IC=0 Collector-Emitter Saturation Voltage VCE(sat) 0.5 V IC=4mA, IB=0.4mA Base-Emitter Turn-On Voltage VBE(on) 0.95 V IC=4mA, VCE=10V Static Forward Current Transfer Ratio hFE 60 Transition Frequency fT 650 MHz IC=4mA, VCE=10V f=100MHz Collector Base Capacitance Ccb 0.7 pF VCB=10V, IE=0, f=1MHz Collector Base Time Constant rbCc 9 ps VCB=10V, IC=4mA, f=31.8MHz Common-Base Feedback capacitance Crb 0.65 pF VCB=10V, IE=0, f=1MHz Noise Figure Nf 5 dB IC=2mA, VCE=5V, RS=50Ω, f=500MHz IC=4mA, VCE=10V* *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3-89 3-88