ZLLS350 SOD523 40V LOW LEAKAGE SCHOTTKY BARRIER DIODE SUMMARY VR = 40V; IFAV = 650mA; VF = 570mV typ @ 100mA; IR = 1µA typ @ 30V DESCRIPTION Packaged in the SOD523 package this addition to the Zetex Low Leakage Schottky diode range offers an ideal low VF/IR performance combined with a low package height of 0.9mm making the device suitable for various converter, charger, and LED driver circuits. SOD523 FEATURES • Low VF • 380mA continuous current rating • Low profile SOD523 package (0.9mm) APPLICATIONS • DC - DC converters • Mobile telecomms • Charger circuits • LED driver circuits • MOSFET voltage protection circuits PINOUT ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZLLS350TA 7" 8mm embossed 3,000 units ZLLS350TC 13" 8mm embossed 10,000 units TOP VIEW DEVICE MARKING • 53 ISSUE 1 - MAY 2005 1 SEMICONDUCTORS ZLLS350 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Continuous reverse voltage VR 40 V Continuous forward current IF 380 mA Average peak forward current; D.C. = 50% I FAV 650 mA Non repetitive forward current t < 100S I FSM 6.0 A < 10mS 1.3 A Power dissipation at T A =25°C (a) PD 357 mW Power dissipation at T A =25°C (b) PD 413 mW Operating and storage temperature range T stg -55 to +150 °C Junction temperature Tj 150 °C LIMIT UNIT THERMAL RESISTANCE PARAMETER SYMBOL (a) R JA 350 °C/W Junction to ambient (b) R JA 303 °C/W Junction to ambient NOTES: (a) For a single device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of 1oz copper in still air conditions. (b) As (a) above measured at t<5 secs. ISSUE 1 - MAY 2005 SEMICONDUCTORS 2 ZLLS350 CHARACTERISTICS ISSUE 1 - MAY 2005 3 SEMICONDUCTORS ZLLS350 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL Reverse breakdown voltage V (BR)R Forward voltage VF MIN. TYP. 40 63 MAX. UNIT CONDITIONS V I R =100A 380 450 mV I F =30mA* 425 520 mV I F =50mA* 520 635 mV I F =100mA* 780 1000 mV I F =275mA* Reverse current IR 1 4 A V R =30V Diode capacitance CD 3.5 6 pF Reverse recovery time t rr 1 f=1MHz; V R =30V Switched from nS IF =100mA, to IR=100mA Measured at I R =10mA * Measured under pulsed conditions. Pulse width ⱕ 300s; duty cycle ⱕ 2%. ISSUE 1 - MAY 2005 SEMICONDUCTORS 4 ZLLS350 CHARACTERISTICS ISSUE 1 - MAY 2005 5 SEMICONDUCTORS ZLLS350 PACKAGE OUTLINE PACKAGE DIMENSIONS Millimeters Inches DIM Millimeters Inches DIM Min Max Min Max Min Max Min Max A – 0.800 – 0.0314 E 1.500 1.700 0.0590 0.0669 A1 0.000 0.100 0.000 0.0039 E1 1.100 1.300 0.0433 0.0511 A2 0.600 0.800 0.0236 0.0314 L 0.200 0.400 0.0078 0.0157 b1 0.160 c 0.080 0.300 0.0062 0.0118 L1 0.170 0.230 0.0066 0.0090 0.220 0.0031 0.0086 ⍜1⬚ 4 10 4⬚ 10⬚ D 0.700 0.900 0.0275 0.0354 © Zetex Semiconductors plc 2005 Europe Americas Asia Pacific Corporate Headquaters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - MAY 2005 SEMICONDUCTORS 6