SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – OCTOBER 1995 FEATURES * 100 Volt VDS * RDS(on)= 10Ω ✪ COMPLEMENTARY TYPE PARTMARKING DETAIL - ZVP3310F MF ZVN3310F S D G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 100 V Continuous Drain Current at T amb =25°C ID 100 mA Pulsed Drain Current I DM 2 A Gate-Source Voltage V GS ± 20 V Power Dissipation at T amb =25°C P tot 330 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 100 Gate-Source Threshold Voltage V GS(th) 0.8 MAX. UNIT CONDITIONS. 2.4 V I D =1mA, V GS =0V V I D =1mA, V DS = V GS Gate-Body Leakage I GSS 20 nA V GS =± 20V, V DS =0V Zero Gate Voltage Drain Current I DSS 1 50 µA µA V DS =100V, V GS =0 V DS =80V, V GS =0V, T=125°C (2) On-State Drain Current(1) ID(on) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (1)(2) g fs 500 10 100 mA V DS =25V, V GS =10V Ω V GS =10V, I D =500mA mS V DS =25V, I D =500mA Input Capacitance (2) C iss 40 pF Common Source Output Capacitance (2) C oss 15 pF Reverse Transfer Capacitance (2) C rss 5 pF Turn-On Delay Time (2)(3) t d(on) 3 typ 5 ns Rise Time (2)(3) tr 5 typ 7 ns Turn-Off Delay Time (2)(3) t d(off) 4 typ 6 ns Fall Time (2)(3) tf 5 typ 7 ns V DS =25V, V GS =0V, f=1MHz V DD ≈25V, I D =500mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator 3 - 396 ZVN3310F TYPICAL CHARACTERISTICS ID(On) -On-State Drain Current (Amps) gfs-Transconductance (mS) 160 VDS= 25V 120 80 40 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.6 1.4 1.0 0.8 6V 5V 0.4 4V 0.2 3V 0 0 2 4 6 8 Saturation Characteristics VDS= 20V 50V 50 40 30 Ciss 20 10 Coss Crss 0 10 20 40 30 50 VGS-Gate Source Voltage (Volts) 16 0 10 VDS - Drain Source Voltage (Volts) ID- Drain Current (Amps) C-Capacitance (pF) 7V 0.6 Transconductance v drain current 14 80V ID=0.6A 12 10 8 6 4 2 0 0 VDS-Drain Source Voltage (Volts) 0.2 0.4 0.6 0.8 1.0 1.2 Q-Charge (nC) Capacitance v drain-source voltage Gate charge v gate-source voltage 100 2.4 10 ID= 1A 0.5A 0.2A 1 1 10 Normalised RDS(on) and VGS(th) RDS(ON) -Drain Source Resistance (Ω) VGS= 10V 9V 8V 1.2 20 VGS-Gate Source Voltage (Volts) On-resistance vs gate-source voltage 2.2 ID=-0.5A 2.0 1.8 1.6 1.4 1.2 Dr e rc ou -S ain s Re ist ce an ) on S( RD 1.0 0.8 0.6 0.4 Gate Thres hold Volta ge VGS(th) -80 -60 -40 -20 0 20 40 60 80 100 120 140 160 T-Temperature (C°) Normalised RDS(on) and VGS(th) vs Temperature 3 - 397