SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4424G ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BVDSS 240 Gate-Source Threshold Voltage VGS(th) 0.8 Gate-Body Leakage IGSS TYP 1.3 MAX. UNIT 1.8 100 V ID=1mA, VGS=0V V ID=1mA, VDS= VGS nA VGS=± 40V, VDS=0V On State Drain-Current ID(on) Zero Gate Voltage Drain Current IDSS Static Drain-Source On-State Resistance RDS(on) Forward Transconductance (1) (2) gfs Input Capacitance (2) Ciss 110 200 pF Common Source Output Capacitance (2) Coss 15 25 pF Reverse Transfer Capacitance (2) Crss 3.5 15 pF 0.8 1.4 4 4.3 0.4 CONDITIONS. ISSUE 4 - OCTOBER 1995 FEATURES * 240 Volt BVDS * Extremely low RDS(on)=4.3Ω * Low threshold and Fast switching APPLICATIONS * Earth recall and dialling switches * Electronic hook switches * Battery powered equipment * Telecoms and high voltage dc-dc convertors A VDS=10V, VGS=10V 10 100 µA µA VDS=240 V, VGS=0V VDS=190 V, VGS=0V, T=125°C PARTMARKING DETAILS COMPLEMENTARY TYPE - 5.5 6 Ω Ω VGS=10V,ID=500mA* VGS=2.5V,ID=100mA* ABSOLUTE MAXIMUM RATINGS. S VDS=10V,ID=0.5A 0.75 Turn-On Delay Time (2)(3) td(on) 2.5 5 ns Rise Time (2)(3) tr 5 8 ns Turn-Off Delay Time (2)(3) td(off) 40 60 ns Fall Time (2)(3) tf 16 25 ns VDS=25V, VGS=0V, f=1MHz VDD ≈50V, ID =0.25A, VGEN=10V D S D G ZVN4424 ZVP4424G PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 240 V Continuous Drain Current at Tamb=25°C ID 500 mA Pulsed Drain Current IDM 1.5 A Gate Source Voltage VGS ± 40 V Power Dissipation at Tamb=25°C Ptot 2.5 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device 3 - 416 ZVN4424G 3 - 415 SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4424G ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BVDSS 240 Gate-Source Threshold Voltage VGS(th) 0.8 Gate-Body Leakage IGSS TYP 1.3 MAX. UNIT 1.8 100 V ID=1mA, VGS=0V V ID=1mA, VDS= VGS nA VGS=± 40V, VDS=0V On State Drain-Current ID(on) Zero Gate Voltage Drain Current IDSS Static Drain-Source On-State Resistance RDS(on) Forward Transconductance (1) (2) gfs Input Capacitance (2) Ciss 110 200 pF Common Source Output Capacitance (2) Coss 15 25 pF Reverse Transfer Capacitance (2) Crss 3.5 15 pF 0.8 1.4 4 4.3 0.4 CONDITIONS. ISSUE 4 - OCTOBER 1995 FEATURES * 240 Volt BVDS * Extremely low RDS(on)=4.3Ω * Low threshold and Fast switching APPLICATIONS * Earth recall and dialling switches * Electronic hook switches * Battery powered equipment * Telecoms and high voltage dc-dc convertors A VDS=10V, VGS=10V 10 100 µA µA VDS=240 V, VGS=0V VDS=190 V, VGS=0V, T=125°C PARTMARKING DETAILS COMPLEMENTARY TYPE - 5.5 6 Ω Ω VGS=10V,ID=500mA* VGS=2.5V,ID=100mA* ABSOLUTE MAXIMUM RATINGS. S VDS=10V,ID=0.5A 0.75 Turn-On Delay Time (2)(3) td(on) 2.5 5 ns Rise Time (2)(3) tr 5 8 ns Turn-Off Delay Time (2)(3) td(off) 40 60 ns Fall Time (2)(3) tf 16 25 ns VDS=25V, VGS=0V, f=1MHz VDD ≈50V, ID =0.25A, VGEN=10V D S D G ZVN4424 ZVP4424G PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 240 V Continuous Drain Current at Tamb=25°C ID 500 mA Pulsed Drain Current IDM 1.5 A Gate Source Voltage VGS ± 40 V Power Dissipation at Tamb=25°C Ptot 2.5 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device 3 - 416 ZVN4424G 3 - 415 ZVN4424G ZVN4424G TYPICAL CHARACTERISTICS VGS=10V 1.0 3V 0.8 0.6 2.5V 0.4 2V 0.2 0 0 2 4 6 8 C-Capacitance (pF) 5V 4V 1.2 14 1.4 ID - Drain Current (Amps) ID - Drain Current (Amps) 250 1.6 300µs Pulsed Test 1.4 1.2 1.0 0.8 300µs Pulsed Test VDS=10V 0.6 0.4 0.2 200 Note:VGS=0V 150 Ciss 100 Coss 50 Crss 0 10 0 2 4 6 8 0 10 0.1 VGS - Gate Source Voltage (Volts) VDS - Drain Source Voltage (Volts) 10 100 600 400 300µs Pulsed Test VDS=10Vz 200 0 0.2 0.4 0.6 0.8 1.0 1.2 300µs Pulsed Test VDS=10V 200 1.4 0 Transconductance v drain current 100 3 4 5 Transconductance v gate-source voltage Normalised RDS(on) and VGS(th) 3V 10V 10 300µs Pulsed Test 1.0 0.1 2 2.4 VGS=2V 2.5V 0.01 1 VGS-Gate Source Voltage (Volts) ID- Drain Current (Amps) 1.0 10 1.6 1.2 0.8 VGS=VDS ID=1mA 0.4 0 -50 ID-Drain Current (Amps) On-resistance vs Drain Current VGS=10V ID=0.5A 2.0 -25 0 25 50 75 100 125 150 Junction Temperature (°C) Normalised RDS(on) and VGS(th) vs Temperature 3 - 417 8 6 4 2 0 2 4 6 8 10 12 14 16 18 Gate charge v gate-source voltage 0 0 Note:ID=400mA 10 Q-Gate Charge (nC) Capacitance v drain-source voltage 600 400 VDD= 20V 50V 100V 12 0 800 gfs-Transconductance (mS) gfs-Transconductance (mS) 800 1 VDS-Drain Source Voltage (Volts) Transfer Characteristics Saturation Characteristics RDS(on)-Drain Source On Resistance (Ω) VGS-Gate Source Voltage (Volts) 1.6 TYPICAL CHARACTERISTICS 3 - 418 20 ZVN4424G ZVN4424G TYPICAL CHARACTERISTICS VGS=10V 1.0 3V 0.8 0.6 2.5V 0.4 2V 0.2 0 0 2 4 6 8 C-Capacitance (pF) 5V 4V 1.2 14 1.4 ID - Drain Current (Amps) ID - Drain Current (Amps) 250 1.6 300µs Pulsed Test 1.4 1.2 1.0 0.8 300µs Pulsed Test VDS=10V 0.6 0.4 0.2 200 Note:VGS=0V 150 Ciss 100 Coss 50 Crss 0 10 0 2 4 6 8 0 10 0.1 VGS - Gate Source Voltage (Volts) VDS - Drain Source Voltage (Volts) 10 100 600 400 300µs Pulsed Test VDS=10Vz 200 0 0.2 0.4 0.6 0.8 1.0 1.2 300µs Pulsed Test VDS=10V 200 1.4 0 Transconductance v drain current 100 3 4 5 Transconductance v gate-source voltage Normalised RDS(on) and VGS(th) 3V 10V 10 300µs Pulsed Test 1.0 0.1 2 2.4 VGS=2V 2.5V 0.01 1 VGS-Gate Source Voltage (Volts) ID- Drain Current (Amps) 1.0 10 1.6 1.2 0.8 VGS=VDS ID=1mA 0.4 0 -50 ID-Drain Current (Amps) On-resistance vs Drain Current VGS=10V ID=0.5A 2.0 -25 0 25 50 75 100 125 150 Junction Temperature (°C) Normalised RDS(on) and VGS(th) vs Temperature 3 - 417 8 6 4 2 0 2 4 6 8 10 12 14 16 18 Gate charge v gate-source voltage 0 0 Note:ID=400mA 10 Q-Gate Charge (nC) Capacitance v drain-source voltage 600 400 VDD= 20V 50V 100V 12 0 800 gfs-Transconductance (mS) gfs-Transconductance (mS) 800 1 VDS-Drain Source Voltage (Volts) Transfer Characteristics Saturation Characteristics RDS(on)-Drain Source On Resistance (Ω) VGS-Gate Source Voltage (Volts) 1.6 TYPICAL CHARACTERISTICS 3 - 418 20