N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVNL110A ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS(on)=3Ω * Low threshold voltage D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 100 V Continuous Drain Current at T amb=25°C ID 320 mA Pulsed Drain Current I DM 6 A Gate Source Voltage V GS ± 20 V Power Dissipation at T amb=25°C P tot 700 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 100 Gate-Source Threshold Voltage V GS(th) 0.75 Gate-Body Leakage Zero Gate Voltage Drain Current MAX. UNIT CONDITIONS. V I D=1mA, V GS=0V 1.5 V ID=1mA, V DS= V GS I GSS 100 nA V GS=± 20V, V DS=0V I DSS 10 500 µA µA V DS=100 V, V GS=0 V DS=80 V, V GS=0V, T=125°C (2) On-State Drain Current(1) I D(on) Static Drain-Source On-State Resistance (1) R DS(on) 750 Forward Transconductance (1)(2) g fs Input Capacitance (2) C iss 75 pF Common Source Output Capacitance (2) C oss 25 pF Reverse Transfer Capacitance (2) C rss 8 pF Turn-On Delay Time (2)(3) td(on) 7 ns Rise Time (2)(3) tr 12 ns Turn-Off Delay Time (2)(3) td(off) 15 ns Fall Time (2)(3) tf 13 ns 4.5 3.0 225 3-400 mA V DS=25 V, V GS=5V Ω Ω V GS=5V,I D=250mA V GS=10V, I D=500mA mS V DS=25V,I D=500mA V DS=25 V, V GS=0V, f=1MHz V DD ≈25V, V GS=10V, I D=1A