N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVNL535A ISSUE 2 – MARCH 94 FEATURES * 350 Volt VDS * RDS(on)=40Ω D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DS VALUE UNIT 350 V Continuous Drain Current at T amb=25°C ID 90 mA Pulsed Drain Current I DM 800 mA Gate Source Voltage V GS ± 20 V Power Dissipation at T amb=25°C P tot 700 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 350 Gate-Source Threshold Voltage V GS(th) 0.5 Gate-Body Leakage Zero Gate Voltage Drain Current MAX. UNIT CONDITIONS. V I D=1mA, V GS=0V 1.5 V ID=1mA, V DS= V GS I GSS 100 nA V GS=± 20V, V DS=0V I DSS 50 400 µA µA V DS=350 V, V GS=0 V DS=280 V, V GS=0V, T=125°C (2) On-State Drain Current(1) I D(on) Static Drain-Source On-State Resistance (1) R DS(on) 200 Forward Transconductance (1)(2) g fs Input Capacitance (2) C iss 70 pF Common Source Output Capacitance (2) C oss 10 pF Reverse Transfer Capacitance (2) C rss 4 pF Turn-On Delay Time (2)(3) t d(on) 7 ns Rise Time (2)(3) tr 7 ns Turn-Off Delay Time (2)(3) t d(off) 16 ns Fall Time (2)(3) tf 10 ns 40 40 100 mA V DS=25 V, V GS=5V Ω Ω V GS=5V,I D=100mA V GS=3V,I D=50mA mS V DS=25V,I D=100mA 3-405 Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% V DS=25 V, V GS=0V, f=1MHz V DD ≈25V, I D=100mA ( 1 )