P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP3306A TYPICAL CHARACTERISTICS -1.2 VGS=-20V -14V -0.8 -12V -10V -0.6 -9V -8V -0.4 -7V -6V -5V -0.2 -4V -14V -10 -20 -30 -40 -0.6 -10V -0.4 -9V -8V -7V -0.2 VDS - Drain Source Voltage (Volts) -8 ID= -6 -400mA -4 -2 -200mA 0 -100mA 0 -2 -4 -6 -8 -10 ID(On)-On-State Drain Current (Amps) VDS-Drain Source Voltage (Volts) Output Characteristics -4 -6 -8 -10 -7V -10V -15V 10 -20V -100 -1000 ID-Drain Current (mA) On-resistance vs Drain Current SYMBOL VALUE UNIT Drain-Source Voltage VDS -60 V -160 mA IDM -1.6 A Saturation Characteristics Gate Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot 625 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). VDS=-10V -0.6 -0.4 -0.2 0 0 -2 -4 -6 -8 -10 2.4 VGS=-10V ID=0.37A 2.2 n) (o 2.0 1.8 1.6 e eR rc ou S ain 1.4 1.2 e nc ta sis Dr Gate Thresh old 1.0 0.8 0.6 PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BVDSS -60 Gate-Source Threshold Voltage VGS(th) -1.5 -40 -20 0 S RD VGS=VDS ID=-1mA Voltage VGS (TH) 20 40 60 80 100 120 140 160 180 Normalised RDS(on) and VGS(th) vs Temperature MAX. UNIT CONDITIONS. V ID=-1mA, VGS=0V -3.5 V ID=-1mA, VDS= VGS Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V Zero Gate Voltage Drain Current IDSS -0.5 -50 µA µA VDS=-60 V, VGS=0 VDS=-48 V, VGS=0V, T=125°C(2) On-State Drain Current(1) ID(on) mA VDS=-18 V, VGS=-10V 14 Ω VGS=-10V,ID=-200mA mS VDS=-18V,ID=-200mA -400 Static Drain-Source On-State RDS(on) Resistance (1) Forward Transconductance (1)(2) Junction Temperature (°C) 3-430 PARAMETER ID Transfer Characteristics Normalised RDS(on) and VGS(th) -6V ABSOLUTE MAXIMUM RATINGS. Continuous Drain Current at Tamb=25°C 2.6 VGS=-5V E-Line TO92 Compatible Pulsed Drain Current VGS-Gate Source Voltage (Volts) 100 S VDS - Drain Source Voltage (Volts) -0.8 Voltage Saturation Characteristics -10 -2 -1.0 VGS-Gate Source Voltage (Volts) RDS(on)-Drain Source On Resistance (Ω) -6V -5V -4.5V 0 -50 -10 D G -12V 0 0 ISSUE 2 MARCH 94 FEATURES * 60 Volt VDS * RDS(on)=14Ω -0.8 0 1 VGS= -16V -1.0 -16V ID - Drain Current (Amps) ID - Drain Current (Amps) -1.0 ZVP3306A gfs 60 Input Capacitance (2) Ciss 50 pF Common Source Output Capacitance (2) Coss 25 pF Reverse Transfer Capacitance (2) Crss 8 pF Turn-On Delay Time (2)(3) td(on) 8 ns Rise Time (2)(3) tr 8 ns Turn-Off Delay Time (2)(3) td(off) 8 ns Fall Time (2)(3) tf 8 ns VDS=-18V, VGS=0V, f=1MHz VDD ≈ -18V, ID=-200mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. 3-429 Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator ( 3 ) P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP3306A TYPICAL CHARACTERISTICS -1.2 VGS=-20V -14V -0.8 -12V -10V -0.6 -9V -8V -0.4 -7V -6V -5V -0.2 -4V -14V -10 -20 -30 -40 -0.6 -10V -0.4 -9V -8V -7V -0.2 VDS - Drain Source Voltage (Volts) -8 ID= -6 -400mA -4 -2 -200mA 0 -100mA 0 -2 -4 -6 -8 -10 ID(On)-On-State Drain Current (Amps) VDS-Drain Source Voltage (Volts) Output Characteristics -4 -6 -8 -10 -7V -10V -15V 10 -20V -100 -1000 ID-Drain Current (mA) On-resistance vs Drain Current SYMBOL VALUE UNIT Drain-Source Voltage VDS -60 V -160 mA IDM -1.6 A Saturation Characteristics Gate Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot 625 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). VDS=-10V -0.6 -0.4 -0.2 0 0 -2 -4 -6 -8 -10 2.4 VGS=-10V ID=0.37A 2.2 n) (o 2.0 1.8 1.6 e eR rc ou S ain 1.4 1.2 e nc ta sis Dr Gate Thresh old 1.0 0.8 0.6 PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BVDSS -60 Gate-Source Threshold Voltage VGS(th) -1.5 -40 -20 0 S RD VGS=VDS ID=-1mA Voltage VGS (TH) 20 40 60 80 100 120 140 160 180 Normalised RDS(on) and VGS(th) vs Temperature MAX. UNIT CONDITIONS. V ID=-1mA, VGS=0V -3.5 V ID=-1mA, VDS= VGS Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V Zero Gate Voltage Drain Current IDSS -0.5 -50 µA µA VDS=-60 V, VGS=0 VDS=-48 V, VGS=0V, T=125°C(2) On-State Drain Current(1) ID(on) mA VDS=-18 V, VGS=-10V 14 Ω VGS=-10V,ID=-200mA mS VDS=-18V,ID=-200mA -400 Static Drain-Source On-State RDS(on) Resistance (1) Forward Transconductance (1)(2) Junction Temperature (°C) 3-430 PARAMETER ID Transfer Characteristics Normalised RDS(on) and VGS(th) -6V ABSOLUTE MAXIMUM RATINGS. Continuous Drain Current at Tamb=25°C 2.6 VGS=-5V E-Line TO92 Compatible Pulsed Drain Current VGS-Gate Source Voltage (Volts) 100 S VDS - Drain Source Voltage (Volts) -0.8 Voltage Saturation Characteristics -10 -2 -1.0 VGS-Gate Source Voltage (Volts) RDS(on)-Drain Source On Resistance (Ω) -6V -5V -4.5V 0 -50 -10 D G -12V 0 0 ISSUE 2 MARCH 94 FEATURES * 60 Volt VDS * RDS(on)=14Ω -0.8 0 1 VGS= -16V -1.0 -16V ID - Drain Current (Amps) ID - Drain Current (Amps) -1.0 ZVP3306A gfs 60 Input Capacitance (2) Ciss 50 pF Common Source Output Capacitance (2) Coss 25 pF Reverse Transfer Capacitance (2) Crss 8 pF Turn-On Delay Time (2)(3) td(on) 8 ns Rise Time (2)(3) tr 8 ns Turn-Off Delay Time (2)(3) td(off) 8 ns Fall Time (2)(3) tf 8 ns VDS=-18V, VGS=0V, f=1MHz VDD ≈ -18V, ID=-200mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. 3-429 Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator ( 3 ) ZVP3306A 120 120 100 100 gfs-Transconductance (mS) gfs-Transconductance (mS) TYPICAL CHARACTERISTICS 80 Note:VDS=-10V 60 40 20 0 80 Note:VDS=-10V 60 40 20 0 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 0 -1 Transconductance v drain current VGS-Gate Source Voltage (Volts) C-Capacitance (pF) Note:VGS=0V f=1MHz 40 Ciss 30 20 Coss 10 Crss 0 0 -10 -20 -30 -40 -3 -4 -5 -6 -7 -8 -9 -10 Transconductance v gate-source voltage 60 50 -2 VGS-Gate Source Voltage (Volts) ID- Drain Current (Amps) -50 -60 2 1 Note:ID=- 0.2A 0 -2 VDS= -20V -40V -60V -4 -6 -8 -10 -12 -14 -16 0 -70 VDS-Drain Source Voltage (Volts) 0.5 1.0 Q-Gate Charge (nC) Capacitance v drain-source voltage Gate charge v gate-source voltage 3-431 1.5