ZXM62N03E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.11V; ID=3.2A DESCRIPTION This new generation of high density MOSFETs from Zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT23-6 package APPLICATIONS • DC - DC Converters • Power Management Functions • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL Top View ZXM62N03E6TA 7 8mm embossed 3000 units ZXM62N03E6TC 13 8mm embossed 10000 units DEVICE MARKING • 2N03 PROVISIONAL ISSUE A - MAY 1999 97 ZXM62N03E6 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS 30 V Gate Source Voltage V GS ± 20 V Continuous Drain Current (V GS=10V; T A=25°C)(b) (V GS=10V; T A=70°C)(b) ID 3.2 2.6 A Pulsed Drain Current (c) I DM 18 A Continuous Source Current (Body Diode) (b) IS 2.1 A Pulsed Source Current (Body Diode) I SM 18 A Power Dissipation at T A=25°C (a) Linear Derating Factor PD 1.1 8.8 W mW/°C Power Dissipation at T A=25°C (b) Linear Derating Factor PD 1.7 13.6 W mW/°C VALUE UNIT THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a) R θJA 113 °C/W Junction to Ambient (b) R θJA 73 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t<5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. PROVISIONAL ISSUE A - MAY 1999 98 ZXM62N03E6 Max Power Dissipation (Watts) CHARACTERISTICS 100 10 0.1 Thermal Resistance (°C/W) DC 1s 100ms 10ms 1ms 100µs 1 1 0.1 10 100 1.5 Refer Note (b) Refer Note (a) 1 0.5 0 0 20 40 60 100 80 120 T - Temperature (°) Safe Operating Area Derating Curve 80 Refer Note (b) 60 40 D=0.5 20 D=0.2 D=0.1 D=0.05 0 0.0001 2 VDS - Drain-Source Voltage (V) Thermal Resistance (°C/W) ID - Drain Current (A) Refer Note (a) 0.001 Single Pulse 0.01 0.1 1 10 160 120 Refer Note (a) 100 80 60 D=0.5 40 D=0.2 20 D=0.1 D=0.05 Single Pulse 0 0.0001 0.001 0.01 100 140 0.1 1 10 100 1000 Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Transient Thermal Impedance PROVISIONAL ISSUE A - MAY 1999 99 ZXM62N03E6 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance g fs 30 V I D=250µA, V GS=0V 1 µA V DS=30V, V GS=0V 100 nA V GS=± 20V, V DS=0V V I D =250µA, V DS= V GS Ω Ω V GS=10V, I D=2.2A V GS=4.5V, I D=1.1A S V DS=10V,I D=1.1A 1.0 0.11 0.15 1.1 DYNAMIC (3) Input Capacitance C iss 380 pF Output Capacitance C oss 90 pF Reverse Transfer Capacitance C rss 30 pF Turn-On Delay Time t d(on) 2.9 ns Rise Time tr 5.6 ns Turn-Off Delay Time t d(off) 11.7 ns Fall Time tf 6.4 ns Total Gate Charge Qg 9.6 nC Gate-Source Charge Q gs 1.7 nC Gate Drain Charge Q gd 2.8 nC Diode Forward Voltage (1) V SD 0.95 V T j=25°C, I S=2.2A, V GS=0V Reverse Recovery Time (3) t rr 18.8 ns T j=25°C, I F=2.2A, di/dt= 100A/µs Reverse Recovery Charge (3) Q rr 11.4 nC V DS=25 V, V GS=0V, f=1MHz SWITCHING(2) (3) V DD =15V, I D=2.2A R G=6.0Ω, R D=6.7Ω (refer to test circuit) V DS=24V,V GS=10V, I D =2.2A (refer to test circuit) SOURCE-DRAIN DIODE (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. PROVISIONAL ISSUE A - MAY 1999 100 ZXM62N03E6 TYPICAL CHARACTERISTICS 100 100 +150°C ID - Drain Current (A) 10V 8V 7V 6V VGS 5V 4.5V 10 4V 3.5V 1 3V 0.1 1 0.1 10 3.5V 1 3V 0.1 10 1 100 Output Characteristics T=150 C T=25 C 1 2.5 3 3.5 4 4.5 5 5.5 6 6.5 1.6 1.4 RDS(on) 1.2 VGS=10V ID=2.2A 1.0 VGS=VDS ID=250uA 0.8 VGS(th) 0.6 0.4 -100 -50 0 100 50 150 200 VGS - Gate-Source Voltage (V) Tj - Junction Temperature (°C) Typical Transfer Characteristics Normalised RDS(on) and VGS(th) v Temperature ISD - Reverse Drain Current (A) ID - Drain Current (A) RDS(on) - Drain-Source On-Resistance (Ω) 4.5V 4V Output Characteristics 10 10 1 VGS=3V VGS=4.5V 0.1 VGS=10V 0.01 5V VDS - Drain-Source Voltage (V) VDS=10V 2 VGS VDS - Drain-Source Voltage (V) 100 0.1 10V 8V 7V 6V 10 0.1 100 Normalised RDS(on) and VGS(th) ID - Drain Current (A) +25°C 0.1 1 10 100 100 10 1 T=150°C T=25°C 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID - Drain Current (A) VSD - Source-Drain Voltage (V) On-Resistance v Drain Current Source-Drain Diode Forward Voltage PROVISIONAL ISSUE A - MAY 1999 101 ZXM62N03E6 TYPICAL CHARACTERISTICS VGS - Gate-Source Voltage (V) 500 C - Capacitance (pF) Vgs=0V f=1Mhz 500 Ciss Coss Crss 400 300 200 100 0 0.1 1 10 100 10 ID=2.2A 9 8 7 VDS=15V 6 VDS=24V 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 VDS - Drain Source Voltage (V) Q -Charge (nC) Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge Basic Gate Charge Waveform Gate Charge Test Circuit Switching Time Waveforms Switching Time Test Circuit PROVISIONAL ISSUE A - MAY 1999 102 ZXM62N03E6 PACKAGE DIMENSIONS b PAD LAYOUT DETAILS e L 2 E1 E DATUM A a e1 D C A A2 DIM A1 Millimetres Inches Min Max Min Max A 0.90 1.45 0.35 0.057 A1 0.00 0.15 0 0.006 A2 0.90 1.30 0.035 0.051 b 0.35 0.50 0.014 0.019 C 0.09 0.20 0.0035 0.008 D 2.80 3.00 0.110 0.118 E 2.60 3.00 0.102 0.118 E1 1.50 1.75 0.059 0.069 L 0.10 0.60 0.004 0.002 Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (516) 543-7100 Fax: (516) 864-7630 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide Zetex plc 1999 Internet:http://www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. PROVISIONAL ISSUE A - MAY 1999 104