ZXMD63P02X DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-20V; RDS(ON)=0.27V; ID=-1.7A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package APPLICATIONS • DC - DC Converters • Power Management Functions • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL ZXMD63P02XTA 7 12mm embossed 1000 units ZXMD63P02XTC 13 12mm embossed 4000 units DEVICE MARKING • ZXM63P02 PROVISIONAL ISSUE A - JUNE 1999 41 Top View ZXMD63P02X ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS -20 V Gate- Source Voltage V GS ± 12 V Continuous Drain Current (V GS=4.5V; T A=25°C)(b)(d) (V GS=4.5V; T A=70°C)(b)(d) ID -1.7 -1.35 A Pulsed Drain Current (c)(d) I DM -9.6 A Continuous Source Current (Body Diode)(b)(d) IS -1.4 A I SM -9.6 A Power Dissipation at T A=25°C (a)(d) Linear Derating Factor PD 0.87 6.9 W mW/°C Power Dissipation at T A=25°C (a)(e) Linear Derating Factor PD 1.04 8.3 W mW/°C Power Dissipation at T A=25°C (b)(d) Linear Derating Factor PD 1.25 10 W mW/°C Operating and Storage Temperature Range T j:T stg -55 to +150 °C Pulsed Source Current (Body Diode)(c)(d) THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a)(d) R θJA 143 °C/W Junction to Ambient (b)(d) R θJA 100 °C/W Junction to Ambient (a)(e) R θJA 120 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t<10 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. (d) For device with one active die. (e) For device with two active die running at equal power. PROVISIONAL ISSUE A - JUNE 1999 42 ZXMD63P02X Max Power Dissipation (Watts) CHARACTERISTICS 100 10 1 Thermal Resistance (°C/W) 0.1 DC 1s 100ms 10ms 1ms 100µs 1 0.1 10 100 Refer Note (b) Refer Note (a) 0.8 0.6 0.4 0.2 0 0 20 40 60 100 80 120 Derating Curve 100 80 D=0.5 40 D=0.2 D=0.1 D=0.05 0 0.0001 1.0 Safe Operating Area Refer Note (b) 20 1.2 T - Temperature (°) 120 60 1.4 VDS - Drain-Source Voltage (V) Thermal Resistance (°C/W) ID - Drain Current (A) Refer Note (a) 0.001 Single Pulse 0.01 0.1 1 10 160 160 Refer Note (a) 140 120 100 80 D=0.5 60 40 20 D=0.2 D=0.1 D=0.05 0 0.0001 0.001 0.01 100 140 Single Pulse 0.1 1 10 100 1000 Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Transient Thermal Impedance PROVISIONAL ISSUE A - JUNE 1999 43 ZXMD63P02X ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (3) g fs -20 V I D=-250µA, V GS=0V -1 µA V DS=-20V, V GS=0V ±100 nA V GS=± 12V, V DS=0V V I D =-250µA, V DS= V GS Ω Ω V GS=-4.5V, I D=-1.2A V GS=-2.7V, I D=-0.6A S V DS=-10V,I D=-0.6A -0.7 0.27 0.40 1.3 DYNAMIC (3) Input Capacitance C iss 290 pF Output Capacitance C oss 120 pF Reverse Transfer Capacitance C rss 50 pF Turn-On Delay Time t d(on) 3.4 ns Rise Time tr 9.6 ns Turn-Off Delay Time t d(off) 16.4 ns Fall Time tf 20.4 ns Total Gate Charge Qg 5.25 nC Gate-Source Charge Q gs 1.0 nC Gate Drain Charge Q gd 2.25 nC Diode Forward Voltage (1) V SD -0.95 V T j=25°C, I S=-1.2A, V GS=0V Reverse Recovery Time (3) t rr 21.7 ns T j=25°C, I F=-1.2A, di/dt= 100A/µs Reverse Recovery Charge(3) Q rr 9.6 nC V DS=-15 V, V GS=0V, f=1MHz SWITCHING(2) (3) V DD =-10V, I D=-1.2A R G=6.0Ω, R D=8.3Ω (Refer to test circuit) V DS=-16V,V GS=-4.5V, I D =-1.2A (Refer to test circuit) SOURCE-DRAIN DIODE (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. PROVISIONAL ISSUE A - JUNE 1999 44 ZXMD63P02X TYPICAL CHARACTERISTICS 2.5V -VGS 2V 1 0.1 1 0.1 10 1.5 -VGS 2 2.5 3 3.5 4 4.5 -ID - Drain Current (A) RDS(on) 1.4 VGS=-4.5V ID=-1.2A 1.2 1.0 VGS=VDS ID=-250uA 0.8 VGS(th) 0.6 0.4 -100 0 50 100 150 200 Normalised RDS(on) and VGS(th) v Temperature 1 VGS=-3V VGS=-5V 1 -50 Tj - Junction Temperature (°C) -ISD - Reverse Drain Current (A) RDS(on) - Drain-Source On-Resistance (Ω) 100 1.6 - Gate-Source Voltage (V) 10 0.1 10 1 Output Characteristics Typical Transfer Characteristics 0.1 0.1 Output Characteristics T=150 C T=25 C 1 2V 1 -VDS - Drain-Source Voltage (V) VDS=-10V 0.1 2.5V -VGS 0.1 100 3.5V 3V -VDS - Drain-Source Voltage (V) 10 1 5V 4.5V 4V +150°C Normalised RDS(on) and VGS(th) -ID - Drain Current (A) 10 3.5V 3V 5V 4.5V 4V +25 C -ID - Drain Current (A) 10 10 10 1 T=150°C T=25°C 0.1 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -ID - Drain Current (A) -VSD - Source-Drain Voltage (V) On-Resistance v Drain Current Source-Drain Diode Forward Voltage PROVISIONAL ISSUE A - JUNE 1999 45 ZXMD63P02X C - Capacitance (pF) 700 VGS - Gate-Source Voltage (V) TYPICAL CHARACTERISTICS Vgs=0V f=1Mhz 600 500 Ciss Coss Crss 400 300 200 100 0 0.1 1 10 100 5 ID=-1.2A 4.5 4 3.5 VDS=-16V 3 2.5 2 1.5 1 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -VDS - Drain Source Voltage (V) Q -Charge (nC) Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge Basic Gate Charge Waveform Gate Charge Test Circuit Switching Time Waveforms Switching Time Test Circuit PROVISIONAL ISSUE A - JUNE 1999 46 ZXMD63P02X PACKAGE DIMENSIONS DIM D Millimetres Inches MIN MIN A 7 1.10 MAX 0.043 6 5 A1 0.05 0.15 0.002 0.006 B 0.25 0.40 0.010 0.016 C 0.13 0.23 0.005 0.009 D 2.90 3.10 0.114 0.122 e 0.65 BSC 0.0256 BSC E 2.90 3.10 0.114 0.122 H 4.90 BSC 0.193 BSC L 0.40 0.70 0.016 0.028 q° 0° 6° 0° 6° H E 8 MAX 1 2 3 4 eX6 A A1 θ° B C L Conforms to JEDEC MO-187 Iss A PAD LAYOUT DETAILS Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (516) 543-7100 Fax: (516) 864-7630 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide Zetex plc 1999 Internet:http://www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. PROVISIONAL ISSUE A - JUNE 1999 48