AF9903M 2N and 2P-Channel Enhancement Mode Power MOSFET Features General Description - Simple Drive Requirement - Low On-Resistance - Full Bridge Application on LCD Monitor Inverter - Pb Free Plating Product The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. Product Summary CH BVDSS (V) RDS(ON) (mΩ) ID (A) N P 35 -35 48 72 4.3 -3.6 The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Pin Descriptions Pin Assignments N1G 1 8 P1G N1D/P1D 2 7 P1S/P2S N1S/N2S 3 6 N2D/P2D N2G 4 5 P2G SO-8 Pin Name Description N1G N1D/P1D N1S/N2S N2G P2G N2D/P2D P1S/P2S P1G Gate (NMOS1) Drain(NMOS1) / Drain(PMOS1) Source(NMOS1) / Source(NMOS2) Gate (NMOS2) Gate (PMOS2) Drain(NMOS2) / Drain(PMOS2) Source(PMOS1) / Source(PMOS2) Gate (PMOS1) Ordering information A X Feature 9903M X PN F :MOSFET X Package Packing S: SO-8 Blank : Tube or Bulk A : Tape & Reel Block Diagram P1S P2S P1G P2G P1N1D P2N2D N1G N2G N2S N1S This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.0 Sep 22, 2005 1/8 AF9903M 2N and 2P-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings Symbol VDS VGS Parameter ID Continuous Drain Current (Note 1) IDM Pulsed Drain Current (Note 2) Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range PD TSTG TJ N-Channel P-Channel 35 -35 ±20 ±20 TA=25ºC 4.3 -3.6 TA=70ºC 3.4 -2.8 20 -20 TA=25ºC 1.38 0.01 -55 to 150 -55 to 150 Drain-Source Voltage Gate-Source Voltage Units V A A W W/ºC ºC ºC Thermal Data Symbol RθJA Parameter Thermal Resistance Junction-Ambient (Note 1) Value 90 Max. Units ºC/W Electrical Characteristics (TJ=25ºC unless otherwise specified) Symbol Parameter Test Conditions VGS=0V, ID=250uA VGS=0V, ID=-250uA Reference to 25 ºC, ∆BVDSS/∆ Breakdown Voltage Temperature ID=1mA Coefficient TJ Reference to 25 ºC, ID=-1mA VGS=10V, ID=4A VGS=4.5V, ID=3A Static Drain-Source RDS(ON) On-Resistance (Note 3) VGS=-10V, ID=-3A VGS=-4.5V, ID=-2A VDS= VGS, ID=250uA VGS(th) Gate-Threshold Voltage VDS= VGS, ID=-250uA VDS=10V, ID=4A gfs Forward Transconductance VDS=-10V, ID=-3A TJ=25ºC VDS=30V, VGS=0V Drain-Source Leakage TJ=70ºC VDS=24V, VGS=0V IDSS Current TJ=25ºC VDS=-30V, VGS=0V TJ=70ºC VDS=-24V, VGS=0V BVDSS Drain-Source breakdown Voltage IGSS Gate-Source Leakage VGS=±20V Qg Total Gate Charge (Note 3) Qgs Gate-Source Charge Qgd Gate-Drain (“Miller”) Charge N-Channel VDS=28V, VGS=4.5V ID=4A P-Channel VDS=-28V, VGS=-4.5V ID=-3A Anachip Corp. www.anachip.com.tw CH N P Limits Min. Typ. 35 -35 - Max. - N - 0.03 - P - -0.02 - 1 -1 - 8 6 6 6 2 1 3 3 48 70 72 100 3 -3 1 25 -1 -25 ±100 ±100 10 10 - V V/ºC N P N P N P N P N P N P N P N P Rev. 1.0 2/8 Unit mΩ V S uA nA nC Seo 22, 2005 AF9903M 2N and 2P-Channel Enhancement Mode Power MOSFET Electrical Characteristics (TJ=25ºC unless otherwise specified) Symbol td(on) tr td(off) tf Parameter Turn-On Delay Time (Note 3) Rise Time Turn-Off Delay Time Fall-Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Test Conditions N-Channel VDS=15V, VGS=10V ID=1A, RG=3.3Ω, RD=15Ω P-Channel VDS=-15V, VGS=-10V ID=-1A, RG=3.3Ω, RD=15Ω N-Channel VGS=0V, VDS=25V f=1.0MHz P-Channel VGS=0V, VDS=-25V f=1.0MHz CH N P N P N P N P N P N P N P Limits Min. Typ. 6 7 5 5 14 19 4 4 490 420 130 140 55 65 Max. 780 1100 - CH N P N Limits Min. Typ. 18 Max. 1.2 -1.2 - Unit ns pF Source-Drain Diode Symbol VSD Parameter Forward On Voltage (Note 3) trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions IS=1.2A, VGS=0V IS=-1.2A, VGS=0V N-Channel IS=4A, VGS=0V dl/dt=100A/µs P-Channel IS=-3A, VGS=0V dl/dt=-100A/µs P - 20 - N - 11 - P - 16 - Unit V ns nC 2 Note 1: Surface Mounted on 1 in copper pad of FR4 board; t ≤10sec; 186ºC/W when mounted on Min. copper pad. Note 2: Pulse width limited by Max. junction temperature Note 3: Pulse width < 300us, duty cycle < 2%. Anachip Corp. www.anachip.com.tw Rev. 1.0 3/8 Seo 22, 2005 AF9903M 2N and 2P-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (N-Channel) Anachip Corp. www.anachip.com.tw Rev. 1.0 4/8 Seo 22, 2005 AF9903M 2N and 2P-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (N-Channel) (Continued) Anachip Corp. www.anachip.com.tw Rev. 1.0 5/8 Seo 22, 2005 AF9903M 2N and 2P-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (P-Channel) Anachip Corp. www.anachip.com.tw Rev. 1.0 6/8 Seo 22, 2005 AF9903M 2N and 2P-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (P-Channel) (Continued) Anachip Corp. www.anachip.com.tw Rev. 1.0 7/8 Seo 22, 2005 AF9903M 2N and 2P-Channel Enhancement Mode Power MOSFET Marking Information SO-8L ( Top View ) 8 Logo Part Number 9 9 03 M AA Y W X 1 Lot code: "A~Z": 01~26; "A~Z": 27~52 Week code: "A~Z": 01~26; "A~Z": 27~52 Year code: "4" =2004 ~ Factory code Package Information Package Type: SO-8L D 7 6 5 2 3 4 E1 E 8 1 L DETAIL A B C A1 A e θ DETAIL A 1. All Dimensions Are in Millimeters. 2. Dimension Does Not Include Mold Protrusions. Symbol A A1 B C D E E1 L θ e Dimensions In Millimeters Min. Nom. Max. 1.35 1.55 1.75 0.10 0.18 0.25 0.33 0.41 0.51 0.19 0.22 0.25 4.80 4.90 5.00 5.80 6.15 6.50 3.80 3.90 4.00 0.38 0.71 1.27 o o o 0 4 8 1.27 TYP. Anachip Corp. www.anachip.com.tw Rev. 1.0 8/8 Seo 22, 2005