2SC4628 Silicon NPN Planar Application High frequency amplifier Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC4628 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3 V Collector current IC 20 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 20 — — V I C = 10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 20 — — V I C = 1 mA, RBE = ∞ Emitter cutoff current I EBO — — 10 µA VEB = 3 V, IC = 0 Collector cutoff current I CBO — — 1 µA VCB = 15 V, IE = 0 DC current transfer ratio hFE 60 — 320 Gain bandwidth product fT 600 — — MHz VCE = 10 V, IC = 2 mA Reverse transfer capacitance Cre — — 0.9 pF VCB = 10 V, IE = 0, emitter common, f = 1 MHz Power gain PG 10 — — dB VCB = 10 V, IC = 2 mA, f = 800 MHz Noise figure NF — — 7.0 dB 2 VCE = 10 V, IC = 2 mA 2SC4628 DC Current Transfer Ratio vs. Collector Current Maximum Collector Dissipation Curve 100 DC Current Transfer Ratio hFE Collector Power Dissipation PC (mW) 300 200 100 VCE = 10 V 80 60 40 20 0 50 100 Ambient Temperature Ta (°C) 0 1 150 Gain Bandwidth Product vs. Collector Current 1600 1200 800 400 0 50 Ceverse Transfer Capacitance Cre (pF) Gain Bandwidth Product fT (MHz) VCE = 10 V 2 5 10 20 Collector Current IC (mA) 50 Reverse Transfer Capacitance vs. Collector to Base Voltage 2000 1 2 5 10 20 Collector Current IC (mA) 5 f = 1 MHz IE = 0 2 1.0 0.5 0.2 0.1 1 2 5 10 20 50 Collector to Base Voltage VCB (V) 3 2SC4628 Power Gain vs. Collector Current Noise Figure vs. Collector Current 20 VCB = 10 V f = 800 MHz Noise Figure NF (dB) 16 Power Gain PG (dB) 10 12 8 4 2 4 6 8 Collector Currrent IC (mA) 0 8 6 4 2 0 10 VCB = 10 V f = 800 MHz 2 4 6 8 Collector Currrent IC (mA) 800 MHz Power Gain and Noise Figure Test Circuit Input Rg = 50 Ω 40 p 100 p D.U.T. 50 p Output RL = 50 Ω L RFC 390 C 2.2 k 1000 p 1000 p IC VAGC VCC C L : 0.5 to 10 pF variable capacitance : λ/4 silver platede copper 26 × 3 × 1 (mm) Collector tap to ground distance: 7 mm Output tap to ground distance: 3 mm RFC : 0.17 mm copper wire, 2.4 mm inside dia, 16 turns –3 dB down bandwidth is 40 MHz 4 Unit R:Ω C:F 10 Unit: mm 4.8 ± 0.3 2.3 Max 0.7 0.60 Max 0.45 ± 0.1 12.7 Min 5.0 ± 0.2 3.8 ± 0.3 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (2) Conforms Conforms 0.25 g Cautions 1. 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