REF5025-HT www.ti.com SBOS502D – SEPTEMBER 2009 – REVISED APRIL 2012 LOW NOISE, VERY LOW DRIFT, PRECISION VOLTAGE REFERENCE Check for Samples: REF5025-HT FEATURES 1 • • • 2 Low Temperature Drift: 40 ppm/°C Low Noise: 3 μVPP/V High Output Current: ±7 mA DNC VIN TEMP GND Down-Hole Drilling High Temperature Environments • • • • (1) 8 2 7 DNC NC VOUT TRIM/NR Controlled Baseline One Assembly/Test Site One Fabrication Site Available in Extreme (–55°C/210°C) Temperature Range (1) Extended Product Life Cycle Extended Product-Change Notification Product Traceability Texas Instruments high temperature products utilize highly optimized silicon (die) solutions with design and process enhancements to maximize performance over extended temperatures. 3 6 4 5 DNC = Do not connect NC = No internal connection SUPPORTS EXTREME TEMPERATURE APPLICATIONS • • • • 1 司 公 限 有 2 件 技 83 器 科 16 元 子 29 子 电 -8 电 创 55 温 德 07 高 鸿 话 油 圳 电 石 深 系 理 联 代 业 专 APPLICATIONS • • HKJ PACKAGE (TOP VIEW) HKQ PACKAGE (TOP VIEW) DNC 8 1 NC VIN VOUT TRIM/NR 5 DNC TEMP 4 GND HKQ as formed or HKJ mounted dead bug Custom temperature ranges available DESCRIPTION The REF5025 is a low-noise, low-drift, very high precision voltage reference. This reference is capable of both sinking and sourcing, and is very robust with regard to line and load changes. Temperature drift (40 ppm/°C) from –55°C to 210°C is achieved using proprietary design techniques. These features combined with very low noise make the REF5025 ideal for use in down-hole drilling applications. 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2009–2012, Texas Instruments Incorporated REF5025-HT SBOS502D – SEPTEMBER 2009 – REVISED APRIL 2012 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. BARE DIE INFORMATION DIE THICKNESS BACKSIDE FINISH BACKSIDE POTENTIAL BOND PAD METALLIZATION COMPOSITION BOND PAD THICKNESS 15 mils. Silicon with backgrind GND Al-Cu (0.5%) 598 nm ½ 2040 mm 12 10 9 8 6 7 | 1676 µm 11 ½ 司 公 限 有 2 件 技 83 器 科 16 元 子 29 子 电 -8 电 创 55 温 德 07 高 鸿 话 油 圳 电 石 深 系 理 联 代 业 专 ½ 38 mm 2 1 3 5 4 0.0 ½ | 38 mm 0.0 Table 1. Bond Pad Coordinates in Microns DISCRIPTION PAD NUMBER X min Y min X max Y max NC 1 35.45 46.55 111.45 122.55 NC 2 496.75 56.55 572.75 132.55 VIN 3 607.45 56.55 683.45 132.55 NC 4 937.9 39.4 1013.9 115.4 TEMP 5 1660.1 47.2 1736.1 123.2 GND 6 1770.9 38.85 1847.05 115 GND 7 1877.1 59.6 2016.8 135.6 TRIM/NR 8 1904.65 1553.4 1980.65 1629.4 NC 9 1782.15 1553.4 1858.15 1629.4 VOUT 10 1080.2 1559.85 1219.9 1636 VOUT 11 880.25 1543.55 956.25 1619.55 NC 12 35.45 1553.45 111.45 1629.45 ORDERING INFORMATION (1) TA –55°C to 210°C (1) 2 PACKAGE ORDERABLE PART NUMBER KGD (bare die) REF5025SKGD1 TOP-SIDE MARKING NA HKJ REF5025SHKJ REF5025SHKJ HKQ REF5025SHKQ REF5025SHKQ For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI web site at www.ti.com. Submit Documentation Feedback Copyright © 2009–2012, Texas Instruments Incorporated REF5025-HT www.ti.com SBOS502D – SEPTEMBER 2009 – REVISED APRIL 2012 ABSOLUTE MAXIMUM RATINGS (1) UNIT Input Voltage 18 V Output Short-Circuit 30 mA Operating Temperature Range –55 to 210 °C Storage Temperature Range –65 to 210 °C 210 °C Human Body Model (HBM) 3000 V Charged Device Model (CDM) 1000 V Junction Temperature (TJ max) ESD Rating 司 公 限 有 2 件 技 83 器 科 16 元 子 29 子 电 -8 电 创 55 温 德 07 高 鸿 话 油 圳 电 石 深 系 理 联 代 业 专 (1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied. THERMAL CHARACTERISTICS FOR HKJ OR HKQ PACKAGE over operating free-air temperature range (unless otherwise noted) PARAMETER θJC MIN TYP to ceramic side of case Junction-to-case thermal resistance to top of case lid (metal side of case) MAX UNIT 5.7 °C/W 13.7 ELECTRICAL CHARACTERISTICS TA = 25°C, ILOAD = 0, CL = 1 μF, VIN = 3.25 V to 18 V (unless otherwise noted). PARAMETER CONDITIONS TA = –55 to 125°C MIN TYP MAX TA = 210°C MIN TYP UNIT MAX OUTPUT VOLTAGE (2.5 V) Output voltage VOUT Initial accuracy (1) NOISE 2.5 VIN = 3.25 V Output voltage noise 0 f = 0.1 Hz to 10 Hz 0.9 2.5 V 0.14 % μVPP 7.5 OUTPUT VOLTAGE TEMPERATURE DRIFT Output voltage temperature drift (2) dVOUT/dT Calculated from –55°C to 210°C 40 ppm/°C LINE REGULATION Line regulation dVOUT/dVIN From VIN = 3.25 V to VIN = 18 V 1 2.2 63 215 ppm/V –7 mA < ILOAD < 10 mA, VIN = 3.25 V 20 50 20 75 ppm/mA VOUT = 0 V 25 LOAD REGULATION Load regulation dVOUT/dILOAD SHORT-CIRCUIT CURRENT Short-circuit current TEMP PIN Voltage output ISC At TA = 25°C Temperature sensitivity (3) 11 mA 575 mV 2.64 mV/°C 200 μs TURN-ON SETTLING TIME To 0.1% with CL = 1 μF Turn-on settling time POWER SUPPLY Supply voltage VS 3.25 Quiescent current 18 0.8 1.2 3.25 18 V 1.5 mA TEMPERATURE RANGE Specified range –55°C to 210°C Operating range –55°C to 210°C (1) (2) (3) Refer to Figure 5 of the TYPICAL CHARACTERISTICS. Refer to Figure 4 of the TYPICAL CHARACTERISTICS. Refer to Figure 10 of the TYPICAL CHARACTERISTICS. Copyright © 2009–2012, Texas Instruments Incorporated Submit Documentation Feedback 3 REF5025-HT SBOS502D – SEPTEMBER 2009 – REVISED APRIL 2012 www.ti.com 100000 司 公 限 有 2 件 技 83 器 科 16 元 子 29 子 电 -8 电 创 55 温 德 07 高 鸿 话 油 圳 电 石 深 系 理 联 代 业 专 Estimated Life (Hours) 1000000 Electromigration Fail Mode 10000 1000 110 130 150 170 190 210 230 Continous T J (°C) Figure 1. REF5025SKGD1 Operating Life Derating Chart Notes: 1. See datasheet for Absolute Maximum and minimum Recommended Operating Conditions. 2. Silicon operating life design goal is 10 years at 105°C junction temperature ( does not include package interconnect life). 4 Submit Documentation Feedback Copyright © 2009–2012, Texas Instruments Incorporated REF5025-HT www.ti.com SBOS502D – SEPTEMBER 2009 – REVISED APRIL 2012 TYPICAL CHARACTERISTICS TA = 25°C, ILOAD = 0, VS = 3.25 V (unless otherwise noted). TEMPERATURE DRIFT (–40°C to 125°C) 7.50 8.00 M o re OUTPUT VOLTAGE INITIAL ACCURACY (AT 210°C) 6.50 TEMPERATURE DRIFT (–55°C to 210°C) 7.00 Figure 3. 0 .6 Drift (ppm/°C) Figure 2. Figure 4. Copyright © 2009–2012, Texas Instruments Incorporated Output Initial Accuracy (%) 0 .4 0 .3 0 .2 0 .1 0 -0 .1 -0 .2 -0 .3 -0 .4 -0 .5 -0 .6 50 54 42 Drift (ppm/°C) 46 38 30 34 26 18 22 14 10 6 2 Population (%) P o p u la tio n (% ) Drift (ppm/°C) 0 .5 5.50 6.00 4.50 5.00 3.50 4.00 2.50 3.00 1.50 2.00 0.50 1.00 0 0 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 3.25 3.50 3.75 4.00 4.25 4.50 4.75 5.00 司 公 限 有 2 件 技 83 器 科 16 元 子 29 子 电 -8 电 创 55 温 德 07 高 鸿 话 油 圳 电 石 深 系 理 联 代 业 专 Population (%) Population (%) TEMPERATURE DRIFT (0°C to 85°C) Figure 5. Submit Documentation Feedback 5 REF5025-HT SBOS502D – SEPTEMBER 2009 – REVISED APRIL 2012 www.ti.com TYPICAL CHARACTERISTICS (continued) TA = 25°C, ILOAD = 0, VS = 3.25 V (unless otherwise noted). POWER-SUPPLY REJECTION RATIO vs FREQUENCY 160 0.4 140 0.3 120 0.2 100 PSRR (dB) 0.5 0.1 0 司 公 限 有 2 件 技 83 器 科 16 元 子 29 子 电 -8 电 创 55 温 德 07 高 鸿 话 油 圳 电 石 深 系 理 联 代 业 专 Output Voltage Accuracy (%) OUTPUT VOLTAGE ACCURACY vs TEMPERATURE 80 60 40 -0.1 20 -0.2 -55 25 125 180 210 0 Temperature (°C) 0.8 10 100 1k Frequency (Hz) Figure 6. Figure 7. DROPOUT VOLTAGE vs LOAD CURRENT OUTPUT VOLTAGE vs LOAD CURRENT 10k 100k 2.514 +125°C 0.7 55°C 2.512 25°C +25°C 0.5 2.508 Output Voltage (V) Dropout Voltage (V) 2.51 0.6 -40°C 0.4 0.3 2.506 2.504 2.502 2.5 0.2 210°C 2.498 0.1 2.496 0 2.494 -15 10 15 -5 0 5 10 L o ad C u rren t (m A) Figure 8. Figure 9. TEMP PIN OUTPUT VOLTAGE vs TEMPERATURE QUIESCENT CURRENT vs TEMPERATURE 1200 1 1100 0.9 1000 0.8 0.7 900 0.6 800 0.5 700 0.4 0.3 600 -75 -50 -25 0 25 50 75 100 125 150 175 200 225 Temperature (°C) Figure 10. 6 -10 IQ (µA) Temp Pin Output Voltage (V) 1.1 -5 0 5 Load Current (mA) -10 Submit Documentation Feedback -75 -50 -25 0 25 50 75 100 125 150 175 200 225 Temperature (°C) Figure 11. Copyright © 2009–2012, Texas Instruments Incorporated REF5025-HT www.ti.com SBOS502D – SEPTEMBER 2009 – REVISED APRIL 2012 TYPICAL CHARACTERISTICS (continued) TA = 25°C, ILOAD = 0, VS = 3.25 V (unless otherwise noted). QUIESCENT CURRENT vs INPUT VOLTAGE LINE REGULATION vs TEMPERATURE 1400 70 60 Line Regulation (ppm/V) 1300 210°C 1200 1000 900 25°C 800 30 20 10 0 –55°C 700 40 司 公 限 有 2 件 技 83 器 科 16 元 子 29 子 电 -8 电 创 55 温 德 07 高 鸿 话 油 圳 电 石 深 系 理 联 代 业 专 IQ (µA) 1100 50 -10 600 -75 2 3 4 5 6 7 8 9 -50 -25 0 10 11 12 13 14 15 16 17 18 25 50 75 100 125 150 175 200 225 Temperature (°C) V IN (V) 25 Figure 13. SHORT-CIRCUIT CURRENT vs TEMPERATURE NOISE Sourcing 20 15 1mV/div Short-Circuit Current (mA) 30 Figure 12. Sinking 10 5 0 -75 -50 -25 0 25 50 75 100 125 150 175 200 1s/div Temperature (°C) Figure 14. Figure 15. STARTUP (REF5025, CL = 1 μF) STARTUP (REF5025, CL = 10 μF) VIN 5V/div VIN 2V/div 1V/div VOUT VOUT 1V/div 40ms/div Figure 16. Copyright © 2009–2012, Texas Instruments Incorporated 400ms/div Figure 17. Submit Documentation Feedback 7 REF5025-HT SBOS502D – SEPTEMBER 2009 – REVISED APRIL 2012 www.ti.com TYPICAL CHARACTERISTICS (continued) TA = 25°C, ILOAD = 0, VS = 3.25 V (unless otherwise noted). LOAD TRANSIENT (CL = 1 μF, IOUT = 1 mA) LOAD TRANSIENT (CL = 1 μF, IOUT = 10 mA) ILOAD +1mA ILOAD 10mA/div +10mA +10mA -1mA -1mA 1mA/div -10mA VOUT VOUT 司 公 限 有 2 件 技 83 器 科 16 元 子 29 子 电 -8 电 创 55 温 德 07 高 鸿 话 油 圳 电 石 深 系 理 联 代 业 专 5mV/div 2mV/div 20ms/div 20ms/div Figure 18. Figure 19. LOAD TRANSIENT (CL = 10 μF, IOUT = 1 mA) LOAD TRANSIENT (CL = 10 μF, IOUT = 10 mA) ILOAD +1mA ILOAD 10mA/div -10mA VOUT VOUT 5mV/div -10mA -1mA -1mA 1mA/div +10mA 2mV/div 100ms/div 100ms/div Figure 20. Figure 21. LINE TRANSIENT (CL = 1 μF) LINE TRANSIENT (CL = 10 μF) 500mV/div VIN VIN 500mV/div 5mV/div VOUT VOUT 5mV/div 20ms/div Figure 22. 8 Submit Documentation Feedback 100ms/div Figure 23. Copyright © 2009–2012, Texas Instruments Incorporated REF5025-HT www.ti.com SBOS502D – SEPTEMBER 2009 – REVISED APRIL 2012 APPLICATION INFORMATION The REF5025 is a low-noise, precision bandgap voltage reference that is specifically designed for excellent initial voltage accuracy and drift. Figure 24 shows a simplified block diagram of the REF5025. VIN REF5025 The REF5025 provides a very accurate voltage output. However, VOUT can be adjusted to reduce noise and shift the output voltage from the nominal value by configuring the trim and noise reduction pin (TRIM/NR, pin 5). The TRIM/NR pin provides a ±15mV adjustment of the device bandgap, which produces a ±15-mV change on the VOUT pin. Figure 26 shows a typical circuit using the TRIM/NR pin to adjust VOUT. When using this technique, the temperature coefficients of the resistors can degrade the temperature drift at the output. 司 公 限 有 2 件 技 83 器 科 16 元 子 29 子 电 -8 电 创 55 温 德 07 高 鸿 话 油 圳 电 石 深 系 理 联 代 业 专 R2 R1 aT (10mA at +25°C) TEMP aT USING THE TRIM/NR PIN VOUT R4 10kW +VSUPPLY R3 TRIM/NR 1.2V R5 60kW REF5025 1kW DNC DNC VIN NC VOUT TEMP GND GND TRIM/NR 10kW 470W Figure 24. REF5025 Simplified Block Diagram 1kW BASIC CONNECTIONS Figure 25 shows the typical connections for the REF5025. A supply bypass capacitor ranging between 1 μF to 10 μF is recommended. A 1-μF to 50-μF, low-ESR output capacitor (CL) must be connected from VOUT to GND. The ESR value should be less than or equal to 1.5 Ω. The ESR minimizes gain peaking of the internal 1.2-V reference and thus reduces noise at the VOUT pin. +VSUPPLY Figure 26. VOUT Adjustment Using TRIM/NR Pin The REF5025 allows access to the bandgap through the TRIM/NR pin. Placing a capacitor from the TRIM/NR pin to GND (as Figure 27 illustrates) in combination with the internal 1-kΩ resistor creates a low-pass filter that lowers the overall noise measured on the VOUT pin. A capacitance of 1 μF is suggested for a low-pass filter with a corner frequency of 14.5 Hz. Higher capacitance results in a lower cutoff frequency. REF5025 DNC CBYPASS 1mF to 10mF VIN TEMP DNC +VSUPPLY NC VOUT GND TRIM/NR REF5025 VOUT CL 1mF to 50mF DNC VIN TEMP DNC NC VOUT GND TRIM/NR Figure 25. Basic Connections SUPPLY VOLTAGE C1 1mF Figure 27. Noise Reduction Using TRIM/NR Pin The REF5025 features extremely low dropout voltage. For loaded conditions, a typical dropout voltage versus load plot is shown in Figure 8 of Typical Characteristics. Copyright © 2009–2012, Texas Instruments Incorporated Submit Documentation Feedback 9 REF5025-HT SBOS502D – SEPTEMBER 2009 – REVISED APRIL 2012 www.ti.com TEMPERATURE DRIFT +V The REF5025 is designed for minimal drift error, which is defined as the change in output voltage over temperature. The drift is calculated using the box method, as described by the following equation: Drift + ǒV V OUT Ǔ * V OUTMIN Temp Range OUTMAX VTEMP 2.6mV/°C 106(ppm) TEMP (2) (2) This pin indicates general chip temperature, accurate to approximately ±15°C. Although it is not generally suitable for accurate temperature measurements, it can be used to indicate temperature changes or for temperature compensation of analog circuitry. A temperature change of 30°C corresponds to an approximate 79-mV change in voltage at the TEMP pin. The TEMP pin has high output impedance (see Figure 24). Loading this pin with a low-impedance circuit induces a measurement error; however, it does not have any effect on VOUT accuracy. To avoid errors caused by low-impedance loading, buffer the TEMP pin output with a suitable low-temperature drift op amp as shown in Figure 28. Submit Documentation Feedback NC VOUT GND TRIM/NR 司 公 限 有 2 件 技 83 器 科 16 元 子 29 子 电 -8 电 创 55 温 德 07 高 鸿 话 油 圳 电 石 深 系 理 联 代 业 专 = 509 mV + 2.64 × T(°C) (For –55°C to 125°C only. Refer to Figure 10 of the TYPICAL CHARACTERISTICS for 125°C to 210°C.) 10 OPA DNC NOTE: (1) Low drift op amp The temperature output terminal (TEMP, pin 3) provides a temperature-dependent voltage output with approximately 60-kΩ source impedance. As seen in Figure 10, the output voltage follows the nominal relationship: PIN VIN (1) (1) TEMPERATURE MONITORING VTEMP REF5025 DNC Figure 28. Buffering the TEMP Pin Output POWER DISSIPATION The REF5025 is specified to deliver current loads of ±10 mA over the specified input voltage range. The temperature of the device increases according to the equation: TJ = TA + PD × θJA (3) (3) Where: TJ = Junction temperature (°C) TA = Ambient temperature (°C) PD = Power dissipated (W) θJA = Junction-to-ambient thermal resistance (°C/W) The REF5025 junction temperature must not exceed the absolute maximum rating of 210°C. NOISE PERFORMANCE Typical 0.1-Hz to 10-Hz voltage noise for each member of the REF5025 is specified in the Electrical Characterisitics table. The noise voltage increases with output voltage and operating temperature. Additional filtering can be used to improve output noise levels, although care should be taken to ensure the output impedance does not degrade performance. Copyright © 2009–2012, Texas Instruments Incorporated REF5025-HT www.ti.com SBOS502D – SEPTEMBER 2009 – REVISED APRIL 2012 APPLICATION CIRCUITS DATA ACQUISITION For applications requiring a negative and positive reference voltage, the REF5025 and OPA735 can be used to provide a dual-supply reference from a 5-V supply. Figure 29 shows the REF5025 used to provide a 2.5-V supply reference voltage. The low drift performance of the REF5025 complements the low offset voltage and zero drift of the OPA735 to provide an accurate solution for split-supply applications. Care must be taken to match the temperature coefficients of R1 and R2. Data acquisition systems often require stable voltage references to maintain accuracy. The REF5025 features low noise, very low drift, and high initial accuracy for high-performance data converters. Figure 30 shows the REF5025 in a basic data acquisition system. 司 公 限 有 2 件 技 83 器 科 16 元 子 29 子 电 -8 电 创 55 温 德 07 高 鸿 话 油 圳 电 石 深 系 理 联 代 业 专 NEGATIVE REFERENCE VOLTAGE +5V Input Signal 0V to 4V R1 50W OPA365 C1 1.2nF +5V +5V VDD +IN ADS8326 -IN REF GND REF5025 DNC VIN DNC REF5025 NC TEMP +5V VOUT GND TRIM/NR VOUT CBYPASS 1mF +2.5V 1mF R1 10kW VIN GND C2 22mF R2 10kW A. +5V OPA735 OPA365 and ADS8326 have not been characterized or tested at 210°C. Figure 30. Basic Data Acquisition System -2.5V -5V NOTE: Bypass capacitors not shown. A. OPA735 has not been characterized or tested at 210°C. Figure 29. The REF5025 and OPA735 Create Positive and Negative Reference Voltages Copyright © 2009–2012, Texas Instruments Incorporated Submit Documentation Feedback 11 PACKAGE OPTION ADDENDUM www.ti.com 2-May-2012 司 公 限 有 2 件 技 83 器 科 16 元 子 29 子 电 -8 电 创 55 温 德 07 高 鸿 话 油 圳 电 石 深 系 理 联 代 业 专 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/ Ball Finish MSL Peak Temp REF5025SHKJ ACTIVE CFP HKJ 8 1 TBD Call TI N / A for Pkg Type REF5025SHKQ ACTIVE CFP HKQ 8 25 TBD AU N / A for Pkg Type REF5025SKGD1 ACTIVE XCEPT KGD 0 195 TBD Call TI N / A for Pkg Type (1) (3) Samples (Requires Login) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. 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OTHER QUALIFIED VERSIONS OF REF5025-HT : • Catalog: REF5025 • Enhanced Product: REF5025-EP Addendum-Page 1 PACKAGE OPTION ADDENDUM www.ti.com 司 公 限 有 2 件 技 83 器 科 16 元 子 29 子 电 -8 电 创 55 温 德 07 高 鸿 话 油 圳 电 石 深 系 理 联 代 业 专 NOTE: Qualified Version Definitions: 2-May-2012 • Catalog - TI's standard catalog product • Enhanced Product - Supports Defense, Aerospace and Medical Applications Addendum-Page 2 司 公 限 有 2 件 技 83 器 科 16 元 子 29 子 电 -8 电 创 55 温 德 07 高 鸿 话 油 圳 电 石 深 系 理 联 代 业 专 司 公 限 有 2 件 技 83 器 科 16 元 子 29 子 电 -8 电 创 55 温 德 07 高 鸿 话 油 圳 电 石 深 系 理 联 代 业 专 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. 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