KSD471A KSD471A Audio Frequency Power Amplifier • • • • Complement to KSB564A Collector Current : IC=1A Collector Power Dissipation : PC=800mW Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings 40 Units V VCEO VEBO Collector-Emitter Voltage 30 V Emitter-Base Voltage 5 V IC Collector Current 1 A PC Collector Power Dissipation 800 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=100µA, IE=0 Min. 40 BVCEO Collector-Emitter Breakdown Voltage IC=10mA, IB=0 30 BVEBO Emitter-Base Breakdown Voltage IE=100µA, IC=0 5 ICBO Collector Cut-off Current VCB=30V, IE=0 Typ. Max. Units V V V 0.1 70 µA hFE DC Current Gain VCE=1V, IC=100mA VCE (sat) Collector-Emitter Saturation Voltage IC=1A, IB=0.1A 400 0.5 VBE (sat) Base-Emitter Saturation Voltage IC=1A, IB=0.1A 1.2 fT Current Gain BandWidth Product VCE=6V, IC=10mA 130 MHz Cob Output Capacitance VCB=6V, IE=0, f=1MHz 16 pF V V hFE Classification Classification O Y G hFE 70 ~ 140 120 ~ 240 200 ~ 400 ©2002 Fairchild Semiconductor Corporation Rev. A3, September 2002 KSD471A Typical Characteristics 1000 1.0 VCE=1.0V IB = 5.0mA IB = 4.5mA IB = 4.0mA IB = 3.5mA 0.8 0.7 0.6 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 0.9 IB = 3.0mA IB = 2.5mA 0.5 IB = 2.0mA 0.4 IB = 1.5mA 0.3 IB = 1.0mA 0.2 100 10 IB = 0.5mA 0.1 1 0.0 0 1 2 3 4 5 6 7 8 9 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE 1000 Figure 2. DC current Gain 10 100 f = 1MHz IE =0 1 Cob[pF], CAPACITANCE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 100 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic VBE(sat) 0.1 V CE(sat) 0.01 10 1 1 10 100 1 1000 10 IC[mA], COLLECTOR CURRENT 100 VCB [V], COLLECTOR-BASE VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 1000 -10 o VCE = 6V 100 10 -1 s IC[A], COLLECTOR CURRENT 1.TC=25 C 2.Single pulse 0m 20 fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 10 DC -0.1 -0.01 1 1 10 100 1000 IC[mA], COLLECTOR CURRENT Figure 5. Current Gain Bandwidth Product ©2002 Fairchild Semiconductor Corporation -1 -10 -100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 6. Safe Operating Area Rev. A3, September 2002 KSD471A Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1