® ISO 9001 Registered Process C0810 CMOS 0.8µm High-Resistance Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Symbol VTN γN βN LeffN ∆WN BVDSSN VTFP(N) Minimum 0.6 P-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage Symbol VTP γP βP LeffP ∆WP BVDSSP VTFP(P) Minimum – 0.7 Diffusion & Thin Films Well (field) Sheet Resistance N+ Sheet Resistance N+ Junction Depth P+ Sheet Resistance P+ Junction Depth Gate Oxide Thickness Field Oxide Thickness Bottom Poly Sheet Res. Gate Poly Sheet Resistance Metal-1 Sheet Resistance Metal-2 Sheet Resistance Passivation Thickness High Resistance Poly Symbol ρN-well(f) ρN+ xjN+ ρP+ xjP+ TGOX TFIELD ρPOLY1 ρPOLY2 ρM1 ρM2 TPASS ρHI-POLY Minimum 0.50 45 Capacitance Gate Oxide Metal-1 to Poly1 Metal-1 to Silicon Metal-2 to Metal-1 Poly-1 to Poly-2 Symbol COX CM1P CM1S CMM CPP Minimum © IMP, Inc. 75 7 10 25 –7 –10 68 15 15 40 20 1.5 0.69 Typical 0.8 0.74 94 0.8 0.3 13 17 Maximum 1.0 Typical – 0.9 0.57 31 0.85 0.4 –12 –17 Maximum –1.1 Typical 0.65 60 0.25 90 0.4 17.5 700 23 23 60 30 200+900 2.0 Maximum 0.80 75 Typical 1.97 0.046 0.028 0.038 0.822 Maximum 115 37 112 32 32 80 40 2.5 1.015 Unit V V1/2 µA/V2 µm µm V V Comments 100x0.8µm 100x0.8µm 100x100µm 100x0.8µm Per side Unit V V1/2 µA/V2 µm µm V V Comments 100x0.8µm 100x0.8µm 100x100µm 100x0.8µm Per side Unit KΩ/o Ω/o µm Ω/o µm nm nm Ω/o Ω/o mΩ/o mΩ/o nm KΩ/o Comments n-well Unit fF/µm2 fF/µm2 fF/µm2 fF/µm2 fF/µm2 oxide+nit. Comments 15 Process C0810 Physical Characteristics Starting Material Starting Mat. Resistivity Typ. Operating Voltage Well Type Metal Layers Poly Layers Contact Size Via Size Metal-1 Width/Space Metal-2 Width/Space Gate Poly Width/Space P <100> 25 - 50 Ω-cm 5V N-well 2 2 0.8x0.8µm 0.8x0.8µm 1.4 / 1.0µm 1.4 / 1.1µm 0.8 / 1.0µm N+/P+ Width/Space N+ To P+ Space Contact To Poly Space Contact Overlap Of Diffusion Contact Overlap Of Poly Metal-1 Overlap Of Contact Metal-1 Overlap Of Via Metal-2 Overlap Of Via Minimum Pad Opening Minimum Pad-to-Pad Spacing Minimum Pad Pitch ID V/S VD, W/L = 100 x 0.8 µm ID V/S VD, W/L = 100 x 0.8 µm -20.0 40.00 VGS = -5V VGS=5V Drain Current, IDS, mA Drain Current, IDS, mA 1.4 / 1.6µm 5.9µm 0.8µm 0.7µm 0.7µm 0.7µm 0.7µm 0.7µm 65x65µm 5.0µm 80.0µm VGS=4V 20 VGS=3V VGS = -4V -10.0 VGS = -3V VGS=2V VGS = -2V VGS=1V 0 0 1 2 3 4 VGS = -1V 0 0 5 -1 -2 C0810 - n - Channel Transistor Characteristics C0810 - P - Channel Transistor Characteristics -10-2 Collector/Base IC/IB Current, Amps Collector Current, IC, µA IB = -10.0 µA IB = -7.5 µA IB = -5.0 µA IB = -2.5 µA 0 -1 -2 -3 -4 -5 10-3 IC 10-4 IB 10-5 10-6 10-7 10-8 10-9 -400 -500 -600 -700 -800 Collector Voltage, VCE, Volt. Base Voltage, VBE, Millivolts. C0810 Vertical pnp Transistor Characteristics C0810 Vertical pnp Transistor Characteristics C0810-4-98 -5 IC/IB, pnp 60 x 7.2 µm IB = -12.5 µA -400.0 16 -4 Drain Voltage, VDS, Volts. IC V/S VC, 60 x 7.2 µm 0 -3 Drain Voltage, VDS, Volts. -900