FAIRCHILD FJY4009R

FJY4009R
tm
PNP Epitaxial Silicon Transistor
Features
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R=4.7KΩ)
• Complement to FJY3009R
Eqivalent Circuit
C
C
S59
E
B
E
B
SOT - 523F
Absolute Maximum Ratings *
Symbol
Ta = 25°C unless otherwise noted
Parameter
Value
Units
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-40
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-100
mA
TSTG
Storage Temperature Range
-55~150
°C
TJ
Junction Temperature
150
°C
PC
Collector Power Dissipation, by RθJA
200
mW
Max
Units
600
°C/W
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics* T =25°C unless otherwise noted
a
Symbol
RθJA
Parameter
Thermal Resistance, Junction to Ambient
* Minimum land pad size.
Electrical Characteristics*
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Condition
MIN
Typ
MAX
Units
V(BR)CBO
Collector-Emitter Breakdown Voltage
IC = -100 uA, IE = 0
-40
V
V(BR)CEO
Collector-Base Breakdown Voltage
IC = -1mA, IB = 0
-40
V
ICBO
Collector-Cutoff Current
VCB = -30 V, IE = 0
hFE
DC Current Gain
VCE = -5 V, IC = -1 mA
VCE(sat)
Collector-Emitter Saturation Voltage
IC = -10 mA, IB = -1 mA
fT
Current Gain - Bandwidth Product
VCE = -10V, IC =- 5 mA
Ccb
Output Capacitance
VCB = -10 V, IE = 0, f = 1.0 MHz
R
Input Resistor
-0.1
100
-0.3
200
4.7
V
MHz
5.5
3.2
uA
600
pF
6.2
KΩ
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2006 Fairchild Semiconductor Corporation
FJY4009R Rev. A
1
www.fairchildsemi.com
FJY4009R PNP Epitaxial Silicon Transistor
November 2006
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
10k
-1000
VCE(sat)[mV], SATURATION VOLTAGE
hFE, DC CURRENT GAIN
VCE = - 5V
R = 4.7K
1k
100
IC = 10IB
R = 4.7k
-100
-10
-1
-1
10
-0.1
-1
-10
-10
-100
-100
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 3. Power Derating
280
PC[mW], POWER DISSIPATION
240
200
160
120
80
40
0
0
25
50
75
100
125
150
175
o
Ta[ C], AMBIENT TEMPERATURE
2
FJY4009R Rev. A
www.fairchildsemi.com
FJY4009R PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
FJY4009R PNP Epitaxial Silicon Transistor
Package Dimensions
SOT-523F
Dimensions in Millimeters
3
FJY4009R Rev. A
www.fairchildsemi.com
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice to improve
design.
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any time without notice to improve design.
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I22