HiPerFASTTM IGBT IXGH40N30BD1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC90 TC = 90°C 40 A ICM TC = 25°C, 1 ms 160 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 30 mH ICM = 80 @ 0.8 VCES A PC TC = 25°C 200 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque (M3) 1.13/10 Nm/lb.in. VCES IC25 VCE(sat) tfi = 300 V = 60 A = 2.4 V = 75 ns TO-247 AD G G = Gate, E = Emitter, C C (TAB) E C = Collector, TAB = Collector Features • International standard package JEDEC TO-247 AD • High current IGBT and paralled FRED in one package • Low leakage current FRED • Newest generation HDMOSTM process • MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions BVCES VGE(th) IC IC ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = 250 mA, VGE = 0 V = 250 mA, VCE = VGE 300 2.5 TJ = 25°C TJ = 125°C = IC90, VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved 5 V V 200 1 mA mA ±100 nA 2.4 V • • • • • AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Advantages • High power density (two devices in one package) • Switching speed for high frequency applications • Easy to mount with 1 screw, (isolated mounting screw hole) 97508C (6/98) 1-4 IXGH40N30BD1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 % 20 C ies S 2500 pF 210 pF C res 60 pF Qg 145 170 nC 23 35 nC 50 75 nC Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz 28 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc TO-247 AD (IXGH) Outline td(on) Inductive load, TJ = 25°C 25 ns t ri IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 1.0 W 45 ns 75 ns Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 75 ns 0.3 mJ C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 25 ns E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 45 ns G H 1.65 2.13 4.5 0.065 0.084 0.177 0.5 mJ J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = Roff = 1.0 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 90 180 ns 130 230 ns 0.6 1.4 mJ RthJC Inches Min. Max. L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 0.62 K/W RthCK 0.25 Reverse Diode (FRED) Test Conditions VF IF = IC90, VGE = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % IRM IF = IC90, VGE = 0 V, -diF/dt = 100 A/ms VR = 100 V; TJ =100°C IF = 1 A; -di/dt = 100 A/ms; VR = 30 V TJ = 25°C RthJC © 2000 IXYS All rights reserved K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol t rr Dim. Millimeter Min. Max. 1.5 30 1.8 V 1.8 A ns 1 K/W IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXGH40N30BD1 200 TJ = 25°C IC - Amperes 80 VGE = 15V 13V 11V TJ = 25°C VGE = 15V 9V 13V 11V 160 IC - Amperes 100 60 7V 40 9V 120 80 7V 40 20 5V 5V 0 0 0 1 2 3 4 0 5 2 4 Fig. 1. Output Characteristics 1.6 9V VGE = 15V 13V 11V 60 VGE = 15V VCE (sat) - Normalized IC - Amperes 10 Fig. 2. Extended Output Characteristics 100 80 8 VCE - Volts VCE - Volts TJ = 125°C 6 7V 40 20 5V IC = 80A 1.4 1.2 IC = 40A 1.0 IC = 20A 0.8 0.6 0.4 0 0 1 2 3 4 25 5 50 75 VCE - Volts 100 125 150 TJ - Degrees C Fig. 3. High Temperature Output Characteristics Fig. 4. Temperature Dependence of VCE(sat) 100 10000 f = 1Mhz VCE = 10V Capacitance - pF IC - Amperes 80 60 TJ = 125°C 40 TJ = 25°C 20 Ciss 1000 Coss 100 Crss 10 0 2 3 4 5 6 7 VGE - Volts Fig. 5. Admittance Curves © 2000 IXYS All rights reserved 8 9 10 0 5 10 15 20 25 30 35 40 VCE-Volts Fig. 6. Capacitance Curves) 3-4 IXGH40N30BD1 1.25 2.5 1.50 3.0 TJ = 125°C TJ = 125°C E(ON) - millijoules 0.75 1.5 E(OFF) 0.50 1.0 0.25 0.5 0.00 0 20 40 E(OFF) 1.00 2.0 0.75 1.5 E(ON) 0.50 E(ON) 0.0 0 10 20 30 40 50 60 RG - Ohms Fig. 8. Dependence of EON and EOFF on RG. IC = 40A VCE = 150V 100 12 IC - Amperes VGE - Volts E(OFF) 0.00 Fig. 7. Dependence of EON and EOFF on IC. 15 0.5 IC = 20A IC - Amperes 18 1.0 E(OFF) IC = 40A 0.25 0.0 80 60 2.5 E(ON) E(OFF) - millijoules E(ON) 1.25 E(OFF) - milliJoules 2.0 E(ON) - millijoules RG = 4.7 1.00 IC = 80A 9 6 10 TJ = -55 to +125°C RG = 4.7 dV/dt < 5V/ns 1 3 0.1 0 0 25 50 75 100 125 150 175 0 50 100 150 200 250 300 VCE - Volts Qg - nanocoulombs Fig. 9. Gate Charge Fig. 10. Turn-off Safe Operating Area 1 ZthJC (K/W) D=0.5 0.1 D=0.2 D=0.1 D=0.05 D=0.02 0.01 D=0.01 Single pulse D = Duty Cycle 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds Fig. 11. Transient Thermal Resistance © 2000 IXYS All rights reserved 4-4