DSS 6-0045AS IFAV = 6 A VRRM = 45 V VF = 0.5 V Power Schottky Rectifier VRSM VRRM V V 45 45 Type marking A C TO-252 AA on product DSS 6-0045AS A 6Y045AS A C (TAB) A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAV TC = 165°C; rectangular, d = 0.5 20 6 A A IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 80 A EAS IAS = 13 A; L = 180 µH; TVJ = 25°C; non repetitive 24 mJ IAR VA =1.5 • VRRM typ.; f=10 kHz; repetitive 1.3 A (dv/dt)cr 1000 TVJ TVJM Tstg V/µs -55...+175 175 -55...+150 °C °C °C Ptot TC = 25°C 50 W Weight typical 0.3 g Symbol Conditions IR TVJ = 25°C VR = VRRM TVJ = 125°C VR = VRRM VF IF = 6 A; IF = 6 A; IF = 12 A; Characteristic Values typ. max. TVJ = 125°C TVJ = 25°C TVJ = 125 °C RthJC 0.3 2.5 mA mA 0.50 0.63 0.59 V V V 3.0 K/W Features • International standard package • Very low VF • Extremely low switching losses • Low IRM-values • Epoxy meets UL 94V-0 Applications • Rectifiers in switch mode power supplies (SMPS) • Free wheeling diode in low voltage converters Advantages • High reliability circuit operation • Low voltage peaks for reduced protection circuits • Low noise switching • Low losses Dimensions see Outlines.pdf IXYS reserves the right to change limits, Conditions and dimensions. 1-2 328 Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified © 2003 IXYS All rights reserved DSS 6-0045AS 100 1000 100 mA A pF 10 TVJ=175°C IR IF CT 1 150°C 125°C 10 0.1 100°C 0.01 75°C TVJ = 175°C 150°C 125°C 25°C 1 .0 D2 50°C 0.001 25°C TVJ= 25°C 100 0.0001 0.2 0.4 0.6 0.8 V 1.0 0 10 20 Fig. 1 Maximum forward voltage drop characteristics Fig. 2 Typ. value of reverse current IR versus reverse voltage VR A P(AV) 20 d = 0.5 15 20 30 40 V 50 VR Fig. 3 Typ. junction capacitance CT versus reverse voltage VR A IFSM 10 IF(AV) 10 10000 14 W 12 25 0 40 V 50 VR 30 VF DC 8 d= DC 0.5 0.33 0.25 0.17 0.08 6 10 4 5 1000 2 0 0 0 50 100 150 °C 200 0 5 10 15 A IF(AV) TC Fig. 4 Average forward current IF(AV) versus case temperature TC 100 10 100 1000 µs 10000 tP Fig. 5 Forward power loss characteristics 10 K/W ZthJC 1 D = 0.5 0.33 0.25 0.17 0.08 Single Pulse 0.1 0.01 0.0001 DSS 6-0045AS 0.001 0.01 0.1 1 t Note: All curves are per diode 328 Fig. 6 Transient thermal impedance junction to case at various duty cycles s 10 © 2003 IXYS All rights reserved 2-2