KEC KRC864E

SEMICONDUCTOR
KRC860E~KRC864E
TECHNICAL DATA
EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
B
B1
FEATURES
C
A
Reduce a Quantity of Parts and Manufacturing Process.
1
6
2
5
3
4
A1
Simplify Circuit Design.
C
With Built-in Bias Resistors.
D
High Packing Density.
EQUIVALENT CIRCUIT (TOP VIEW)
EQUIVALENT CIRCUIT
6
5
P
4
P
5
J
R1
B
P
MILLIMETERS
_ 0.05
1.6 +
_ 0.05
1.0 +
_ 0.05
1.6 +
_ 0.05
1.2 +
0.50
_ 0.05
0.2 +
_ 0.05
0.5 +
_ 0.05
0.12 +
H
C
DIM
A
A1
B
B1
C
D
H
J
Q1
Q2
E
1
2
1.
2.
3.
4.
5.
6.
3
Q1
Q1
Q2
Q2
Q2
Q1
EMITTER
BASE
COLLECTOR
EMITTER
BASE
COLLECTOR
TES6
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
50
V
Collector Power Dissipation
Collector-Emitter Voltage
VCEO
50
V
Junction Temperature
Emitter-Base Voltage
VEBO
5
V
Storage Temperature Range
IC
Collector Current
100
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
CHARACTERISTIC
SYMBOL
RATING
UNIT
PC *
200
mW
Tj
150
Tstg
-55 150
* Total Rating.
mA
)
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=50V, IE=0
-
-
100
nA
Emitter Cut-off Current
IEBO
VEB=5V, IC=0
-
-
100
nA
DC Current Gain
hFE
VCE=5V, IC=1mA
120
-
-
IC=10mA, IB=0.5mA
-
0.1
0.3
V
VCE=10V, IC=5mA
-
250
-
MHz
-
4.7
-
-
10
-
VCE(sat)
Collector-Emitter Saturation Voltage
fT *
Transition Frequency
KRC860E
KRC861E
R1
KRC862E
Input Resistor
-
100
-
KRC863E
-
22
-
KRC864E
-
47
-
k
Type Name
Marking
6
5
4
1
2
3
MARK SPEC
TYPE
KRC860E
KRC861E
KRC862E
KRC863E
KRC864E
MARK
NK
NM
NN
NO
NP
2002. 7. 10
Revision No : 2
1/4
KRC860E~KRC864E
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Rise Time
SYMBOL
MIN.
TYP.
MAX.
KRC860E
-
0.025
-
KRC861E
-
0.03
-
-
0.3
-
KRC863E
-
0.06
-
KRC864E
-
0.11
-
KRC860E
-
3.0
-
VO=5V
-
2.0
-
VIN=5V
-
6.0
-
RL=1k
-
4.0
-
KRC864E
-
5.0
-
KRC860E
-
0.2
-
KRC861E
-
0.12
-
-
2.0
-
KRC863E
-
0.9
-
KRC864E
-
1.4
-
KRC862E
tr
KRC861E
Switching
Time
Storage Time
KRC862E
tstg
KRC863E
Fall Time
2002. 7. 10
KRC862E
Revision No : 2
TEST CONDITION
tf
UNIT
S
2/4
KRC860E~KRC864E
V CE(sat) - I C
h FE - I C
KRC860E
COLLECTOR-EMITTER SATURATIN
VOLTAGE VCE(sat) (V)
DC CURRENT GAIN h FE
2k
1k
500
300
Ta=100 C
Ta=25 C
Ta=-25 C
100
50
30
VCE =5V
10
0.1
1
3
10
30
100
IC /I B =20
1
0.5
0.3
0.1
Ta=100 C
0.05
0.03
Ta=25 C
Ta=-25 C
0.01
0.1
0.3
Ta=100 C
Ta=25 C
Ta=-25 C
100
50
30
V CE =5V
0.3
1
3
10
30
100
2
0.5
0.3
0.1
Ta=100 C
0.05
0.03
Ta=25 C
Ta=-25 C
0.01
0.1
0.3
COLLECTOR-EMITTER SATURATIN
VOLTAGE VCE(sat) (V)
DC CURRENT GAIN h FE
Ta=100 C
Ta=25 C
Ta=-25 C
50
30
V CE =5V
0.3
1
3
3
10
30
100
VCE(sat) - I C
1k
100
1
COLLECTOR CURRENT I C (mA)
KRC862E
500
300
100
IC /I B =20
1
h FE - I C
10
30
COLLECTOR CURRENT I C (mA)
2002. 7. 10
30
KRC861E
COLLECTOR CURRENT I C (mA)
0.1
10
VCE(sat) - I C
500
300
10
3
h FE - I C
1k
2k
1
COLLECTOR CURRENT I C (mA)
KRC861E
10
0.1
KRC860E
COLLECTOR CURRENT I C (mA)
COLLECTOR-EMITTER SATURATIN
VOLTAGE VCE(sat) (V)
DC CURRENT GAIN h FE
2k
0.3
2
Revision No : 2
100
2
KRC862E
I C /I B =20
1
0.5
0.3
0.1
Ta=100 C
0.05
0.03
0.01
Ta=25 C
Ta=-25 C
0.1
0.3
1
3
10
30
100
COLLECTOR CURRENT I C (mA)
3/4
KRC860E~KRC864E
VCE(sat) - I C
h FE - I C
1k
500
300
Ta=100 C
100
Ta=25 C
Ta=-25 C
50
30
V CE =5V
10
0.1
2k
DC CURRENT GAIN h FE
COLLECTOR-EMITTER SATURATIN
VOLTAGE VCE(sat) (V)
KRC863E
0.3
1
3
10
30
100
0.5
0.3
0.1
Ta=100 C
0.05
0.03
0.01
Ta=25 C
Ta=-25 C
0.1
0.3
1
3
10
30
V CE(sat) - I C
500
300
Ta=100 C
Ta=25 C
Ta=-25 C
100
50
30
VCE =5V
0.3
1
3
10
30
COLLECTOR CURRENT I C (mA)
2002. 7. 10
I C /I B =20
1
h FE - I C
KRC864E
0.1
KRC863E
COLLECTOR CURRENT I C (mA)
1k
10
2
COLLECTOR CURRENT I C (mA)
COLLECTOR-EMITTER SATURATIN
VOLTAGE VCE(sat) (V)
DC CURRENT GAIN h FE
2k
Revision No : 2
100
2
100
KRC864E
I C /I B =20
1
0.5
0.3
0.1
Ta=100 C
0.05
0.03
Ta=25 C
Ta=-25 C
0.01
0.1
0.3
1
3
10
30
100
COLLECTOR CURRENT I C (mA)
4/4