TM UniFET FDP10N60ZU / FDPF10N60ZUT tm N-Channel MOSFET, FRFET 600V, 9A, 0.8Ω Features Description • RDS(on) = 0.65Ω ( Typ.)@ VGS = 10V, ID = 4.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( Typ. 31nC) • Low Crss ( Typ. 15pF) This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction. • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant D G G D S TO-220 FDP Series TO-220F FDPF Series GD S S MOSFET Maximum Ratings TC = 25 C unless otherwise noted* o Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage FDP10N60ZU FDPF10N60ZUT 600 Units V ±30 V -Continuous (TC = 25oC) 9 9* -Continuous (TC = 100oC) 5.4 5.4* ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 9 A EAR Repetitive Avalanche Energy (Note 1) 18 mJ dv/dt Peak Diode Recovery dv/dt - Pulsed 36 (Note 2) 36* A 100 (Note 3) mJ 20 V/ns (TC = 25oC) 180 42 W - Derate above 25oC 1.45 0.3 W/oC PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL (Note 1) A -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP10N60ZU FDPF10N60ZUT RθJC Thermal Resistance, Junction to Case 0.7 3.0 RθCS Thermal Resistance, Junction to Ambient 0.5 - RθJA Thermal Resistance, Junction to Ambient 62.5 62.5 ©2009 Fairchild Semiconductor Corporation FDP10N60ZU/FDPF10N60ZUT Rev. A 1 Units o C/W www.fairchildsemi.com FDP10N60ZU/FDPF10N60ZUT N-Channel MOSFET April 2009 Device Marking FDP10N60ZU Device FDP10N60ZU Package TO-220 Reel Size - Tape Width - Quantity 50 FDPF10N60ZUT FDPF10N60ZUT TO-220F - - 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250μA, VGS = 0V, TJ = 25oC 600 - - V ID = 250μA, Referenced to 25oC - 0.8 - V/oC IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V - - 25 VDS = 480V, TC = 125oC - - 250 μA IGSS Gate to Body Leakage Current VGS = ±30V, VDS = 0V - - ±10 μA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA 3.0 - 5.0 V Static Drain to Source On Resistance VGS = 10V, ID = 4.5A - 0.65 0.8 Ω gFS Forward Transconductance VDS = 40V, ID = 4.5A - 12.5 - S VDS = 25V, VGS = 0V f = 1MHz - 1490 1980 pF - 230 240 pF - 15 25 pF - 31 40 nC - 8 - nC - 12 - nC - 25 60 ns - 40 90 ns - 95 200 ns - 60 130 ns Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 480V, ID = 10A VGS = 10V (Note 4) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 300V, ID = 10A RG = 25Ω , VGS = 10V (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 9 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 36 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 10A - - 1.6 V trr Reverse Recovery Time - 45 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 10A dIF/dt = 100A/μs - 52 - nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 2mH, IAS = 10A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 10A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics FDP10N60ZU/FDPF10N60ZUT Rev. A 2 www.fairchildsemi.com FDP10N60ZU/FDPF10N60ZUT N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 30 10 20 o 25 C ID,Drain Current[A] 20 ID,Drain Current[A] 30 VGS = 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V o 10 150 C *Notes: 1. 250μs Pulse Test * Notes : 1. VDS = 20V 2. 250μs Pulse Test o 2. TC = 25 C 1 1 1 20 10 VDS,Drain-Source Voltage[V] 3 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 5 6 7 VGS,Gate-Source Voltage[V] 100 IS, Reverse Drain Current [A] 1.1 1.0 0.9 VGS = 10V 0.8 VGS = 20V 0.7 o 150 C 10 o 25 C Notes: 1. VGS = 0V o * Note : TJ = 25 C 2. 250μs Pulse Test 0.6 0 5 10 15 20 ID, Drain Current [A] 25 1 0.0 30 Figure 5. Capacitance Characteristics 2.0 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 2000 Ciss VGS, Gate-Source Voltage [V] Coss 2500 * Note: 1. VGS = 0V 2. f = 1MHz 1500 1000 500 0.5 1.0 1.5 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 3000 Capacitances [pF] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 1.2 RDS(on) [Ω], Drain-Source On-Resistance 4 VDS = 150V VDS = 380V VDS = 400V 8 6 4 2 Crss * Note : ID = 10A 0 0.1 0 1 10 VDS, Drain-Source Voltage [V] FDP10N60ZU/FDPF10N60ZUT Rev. A 0 30 3 10 20 30 Qg, Total Gate Charge [nC] 40 www.fairchildsemi.com FDP10N60ZU/FDPF10N60ZUT N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperaure Figure 8. Maximum Safe Operating Area - FDPF10N60ZUT 100 20μs 100μs ID, Drain Current [A] BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 10 1ms 10ms 1 Operation in This Area is Limited by R DS(on) * Notes : 0.1 o * Notes : 1. VGS = 0V 2. ID = 250μA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] DC 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0.01 200 1 10 100 VDS, Drain-Source Voltage [V] 1000 Figure 9. Maximum Drain Current vs. Case Temperature 10 ID, Drain Current [A] 8 6 4 2 0 25 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 10. Transient Thermal Response Curve - FDPF10N60ZUT Thermal Response [ZθJC] 5 0.5 1 0.2 0.1 PDM 0.05 0.1 t1 t2 0.02 0.01 * Notes : o Single pulse 0.01 -4 10 FDP10N60ZU/FDPF10N60ZUT Rev. A 1. ZθJC(t) = 3.0 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) -3 10 -2 -1 10 10 1 10 Rectangular Pulse Duration [sec] 4 2 10 3 10 www.fairchildsemi.com FDP10N60ZU/FDPF10N60ZUT N-Channel MOSFET Typical Performance Characteristics (Continued) FDP10N60ZU/FDPF10N60ZUT N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP10N60ZU/FDPF10N60ZUT Rev. A 5 www.fairchildsemi.com FDP10N60ZU/FDPF10N60ZUT N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V V GS ( D r iv e r ) G S G S am e T ype as DUT V DD • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/ d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v / d t V V SD DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDP10N60ZU/FDPF10N60ZUT Rev. A 6 www.fairchildsemi.com TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 (45° 1.52 ±0.10 10.08 ±0.30 (1.00) 13.08 ±0.20 ) 1.27 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.40 ±0.20 10.00 ±0.20 FDP10N60ZU/FDPF10N60ZUT Rev. A 7 www.fairchildsemi.com FDP10N60ZU/FDPF10N60ZUT N-Channel MOSFET Mechanical Dimensions FDP10N60ZU/FDPF10N60ZUT N-Channel MOSFET Mechanical Dimensions TO-220F 3.30 ±0.10 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 0° (3 9.75 ±0.30 MAX1.47 ) #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters FDP10N60ZU/FDPF10N60ZUT Rev. A 8 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 FDP10N60ZU/FDPF10N60ZUT Rev. A 9 www.fairchildsemi.com FDP10N60ZU/FDPF10N60ZUT N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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