CM15TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Six-IGBT IGBTMOD™ H-Series Module 15 Amperes/600 Volts A B L K GuP SuP K GvP SvP M T - DIA. (2 TYP.) GwP SwP P D H U V E J W N GuN SuN GvN SvN Q GwN SwN Q S S P S C Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. .250 TAB .110 TAB F G N R P GuP GvP GwP SuP SvP SwP V U Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery (70ns) Free-Wheel Diode □ High Frequency Operation (20-25kHz) □ Isolated Baseplate for Easy Heat Sinking W GuN GvN GwN SuN SvN SwN N Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters A 3.54 90.0 K 0.67 17.0 B 2.99±0.01 76.0±0.2 L 0.63 16.0 C 2.52 64.0 M 0.59 15.0 D 1.54 39.0 N 0.56 14.1 E 0.98 25.0 P 0.51 13.0 F 0.90 23.0 Q 0.43 11.0 G 0.87 22.0 R 0.26 6.5 H 0.75 19.0 S 0.24 6.0 J 0.71 18.0 T 0.22 Dia. Dia. 5.5 Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM15TF-12H is a 600V (VCES), 15 Ampere Six-IGBT IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 15 12 295 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM15TF-12H Six-IGBT IGBTMOD™ H-Series Module 15 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM15TF-12H Units Junction Temperature Tj –40 to +150 °C Storage Temperature Tstg –40 to +125 °C Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts Gate-Emitter Voltage VGES ±20 Volts IC 15 Amperes ICM 30* Amperes Collector Current Peak Collector Current Diode Forward Current IF 15 Amperes Diode Forward Surge Current IFM 30* Amperes Power Dissipation Pd 100 Watts – 17 in-lb – 150 Grams VRMS 2500 Volts Max. Mounting Torque M5 Mounting Screws Module Weight (Typical) V Isolation * Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating. Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 1.5mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 15A, VGE = 15V – 2.1 2.8** Volts IC = 15A, VGE = 15V, Tj = 150°C – 2.15 – Volts Total Gate Charge QG VCC = 300V, IC = 15A, VGS = 15V – 45 – nC Diode Forward Voltage VFM IE = 15A, VGS = 0V – – 2.8 Volts Min. Typ. Max. Units – – 1.5 nF ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) Load Rise Time Switch Turn-off Delay Time Times Fall Time Test Conditions VGE = 0V, VCE = 10V, f = 1MHz – – 0.5 nF – – 0.3 nF – – 120 ns tr VCC = 300V, IC = 15A, – – 300 ns td(off) VGE1 = VGE2 = 15V, RG = 42Ω – – 200 ns – – 300 ns tf Diode Reverse Recovery Time trr IE = 15A, diE/dt = –30A/µs – – 110 ns Diode Reverse Recovery Charge Qrr IE = 15A, diE/dt = –30A/µs – 0.04 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified 296 Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c) Per IGBT – – 1.30 °C/W Thermal Resistance, Junction to Case Rth(j-c) Per FWDi – – 3.50 °C/W Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – – 0.092 °C/W Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM15TF-12H Six-IGBT IGBTMOD™ H-Series Module 15 Amperes/600 Volts TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 30 VGE = 20V 15 12 20 COLLECTOR CURRENT, IC, (AMPERES) 11 10 10 9 7 20 10 8 3 2 1 2 4 6 8 0 10 4 8 12 16 0 20 0 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 6 IC = 15A 4 2 CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) Tj = 25°C IC = 30A 102 4 8 12 16 0 20 0.8 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 1.6 2.4 3.2 REVERSE RECOVERY TIME, t rr, (ns) 103 tf td(off) 101 100 VCC = 300V VGE = ±15V RG = 42Ω Tj = 125°C 101 COLLECTOR CURRENT, IC, (AMPERES) 4.0 Cres 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 tr 10-1 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) td(on) Coes 10-2 10-1 101 0 Cies 100 VGE = 0V IC = 6A 0 30 101 103 8 20 CAPACITANCE VS. VCE (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 10 10 COLLECTOR-CURRENT, IC, (AMPERES) 102 GATE CHARGE, VGE 101 Irr 102 100 t rr di/dt = -30A/µsec Tj = 25°C 101 100 101 EMITTER CURRENT, IE, (AMPERES) 10-1 102 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 0 102 VGE = 15V Tj = 25°C Tj = 125°C 4 0 0 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 5 VCE = 10V Tj = 25°C Tj = 125°C REVERSE RECOVERY CURRENT, Irr, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) Tj = 25oC COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 30 SWITCHING TIME, (ns) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 20 16 VCC = 200V 12 VCC = 300V 8 4 0 0 10 20 30 40 50 60 GATE CHARGE, QG, (nC) 297 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-3 10-2 10-1 100 101 100 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 298 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 1.3°C/W 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) CM15TF-12H Six-IGBT IGBTMOD™ H-Series Module 15 Amperes/600 Volts TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 10-2 10-1 100 101 100 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 3.5°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3