FDZ2552P Dual P-Channel 2.5V Specified PowerTrenchTM BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ2552P minimizes both PCB space and RDS(ON). This dual BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON). •= –6 A, –20 V. RDS(ON) = 0.045 Ω @ VGS = –4.5 V RDS(ON) = 0.075 Ω @ VGS = –2.5 V. •= Occupies only 0.10 cm2 of PCB area. 1/3 the area of SO-8. •= Ultra-thin package: less than 0.70 mm height when mounted to PCB. Applications •= Outstanding thermal transfer characteristics: significantly better than SO-8. •= Battery management •= Load switch •= Battery protection •= Ultra-low Qg x RDS(ON) figure-of-merit. •= High power and current handling capability. D D D S S S G S S S Pin 1 G S S S G S S D D D F2552 Q2 Q1 Pin 1 PD TJ, Tstg Q2 Top Absolute Maximum Ratings VDSS VGSS ID D G Bottom Symbol Q1 S TA=25oC unless otherwise noted Parameter Ratings Units Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (Note 1a) – Pulsed Power Dissipation (Steady State) (Note 1a) Operating and Storage Junction Temperature Range –20 ±12 –6 -20 3.0 –55 to +175 V V A W °C 50 8 °C/W °C/W Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) Package Marking and Ordering Information Device Marking F2552 1999 Fairchild Semiconductor Corporation Device FDZ2552P Reel Size TBD Tape width TBD Quantity TBD FDZ2552P Rev. A (w) FDZ2552P November 1999 ADVANCE INFORMATION Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ===∆TJ IDSS IGSSF IGSSR Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage Current, Forward Gate–Body Leakage Current, Reverse On Characteristics VGS(th) RDS(on) VGS = 0 V, ID = –250 µA ID = –250 µA, Referenced to 25°C VDS = –16 V, VGS = 0 V VGS = –12 V, VDS = 0 V VGS = 12 V –20 V mV/°C 28 –1 –100 µA nA 100 nA –0.9 0.036 0.060 –1.5 0.045 0.075 V Ω –0.77 –2.5 –1.2 A V VDS = 0 V (Note 2) Gate Threshold Voltage Static Drain–Source On–Resistance VDS = VGS, ID = –250 µA VGS = –4.5 V, ID = –6 A VGS = –2.5 V, ID = –4.5 A –0.4 Drain–Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = –2.5 A Voltage (Note 2) Notes: 1. RθJA is a function of the junction-to-case (RθJC), case-to-ambient (RθCA ) and the PC Board (RθBA ) thermal resistance where the case thermal reference is defined the top surface of the package. RθJC is guaranteed by design while RθCA and RθBA are determined by the user's design. Maximum current ratings assume single device operation. (a). RθJA = 50°C/W (steady-state) when mounted on 1 in2 of 2 oz. copper. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDZ2552P Rev. A (w) FDZ2552P Electrical Characteristics FDZ2552P Dimensional Outline and Pad Layout 2.50 CL ø INDEX SLOT 0.30 2 1 A GATE 1 F2552 Date / Vendor Code CL B 3 D D S1 S1 D 3.25 4.00 C S1 S1 S1 S2 S2 0.65 D GATE 2 E S2 S2 S2 F D D D 0.65 S1 = Source 1 S2 = Source 2 D = Drain 1.30 TOP VIEW RECOMMENDED LAND PATTERN 0.76 0.25 SOLDER BALL, ø 0.25 CL F SOLDER BALL, ø 0.25 E FRONT VIEW 3.25 D INDEX SLOT (HIDDEN) CL C 0.65 B 0.51 A 1 SEATING PLANE 2 3 0.65 1.30 SIDE VIEW BOTTOM VIEW NOTES: UNLESS OTHEWISE SPECIFIED A) ALL DIMENSIONS ARE IN MILLIMETERS. FDZ2552P Rev. A (w) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ISOPLANAR™ MICROWIRE™ POP™ PowerTrench QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. www.fairchildsemi.com