SHINDENGEN K2185

SHINDENGEN
VX-2 Series Power MOSFET
2SK2185
(F5F50VX2)
N-Channel Enhancement type
OUTLINE DIMENSIONS
Case :: FTO-220
Case
E-pack
(Unit : mm)
500V5A
FEATURES
● Input capacitance (Ciss) is small.
Especially, input capacitance
at 0 biass is small.
● The static Rds(on) is small.
● The switching time is fast.
APPLICATION
● Switching power supply of AC 100V input
● High voltage power supply
● Inverter
RATINGS
●Absolute Maximum Ratings (Tc = 25℃)
Item
Symbol
Conditions
Storage Temperature
Tstg
Channel Temperature
Tch
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Continuous Drain Current(DC)
ID
Continuous Drain Current(Peak)
IDP
Continuous Source Current(DC)
IS
P
T
Total Power Dissipation
Single Pulse Avalanche Current
IAS
Tch = 25℃
d
i
s
Dielectric Strength
V
Terminals to case, AC 1 minute
Mounting Torque
TOR (Recommended torque : 0.3N・m )
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
Ratings
-55∼150
150
500
±30
5
15
5
30
5
2
0.5
Unit
℃
V
A
W
A
kV
N・m
VX-2 Series Power MOSFET
●Electrical Characteristics Tc = 25℃
Item
Symbol
V(BR)DSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Source Leakage Current
Forward Transconductance
gfs
Static Drain-Source On-state Resistance RDS(ON)
Gate Threshold Voltage
VTH
VSD
Source-Drain Diode Forwade Voltage
θjc
Thermal Resistance
Qg
Total Gate Charge
Ciss
Input Capacitance
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Turn-On Time
ton
toff
Turn-Off Time
2SK2185 ( F5F50VX2 )
Conditions
ID = 1mA, VGS = 0V
VDS = 500V, VGS = 0V
VGS = ±30V, VDS = 0V
ID = 2.5A, VDS = 10V
ID = 2.5A, VGS = 10V
ID = 1mA, VDS = 10V
IS = 2.5A, VGS = 0V
junction to case
VDD = 400V, VGS = 10V, ID = 5A
VDS = 10V, VGS = 0V, f = 1MHZ
ID = 2.5A, VGS = 10V, RL = 60Ω
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
Min.
500
Typ.
Max.
250
±0.1
1.5
2.5
3.8
1.1
3.0
21
580
45
140
55
110
Unit
V
μA
S
1.5
Ω
3.5
V
1.5
4.17 ℃/W
nC
pF
90
170
ns
2SK2185
Transfer Characteristics
10
Tc = −55°C
Drain Current ID [A]
8
25°C
100°C
150°C
6
4
2
0
VDS = 25V
pulse test
TYP
0
5
10
15
Gate-Source Voltage VGS [V]
20
2SK2185
Static Drain-Source On-state Resistance
Static Drain-Source On-state Resistance RDS(ON) [Ω]
10
ID = 2.5A
1
0.1
VGS = 10V
pulse test
TYP
-50
0
50
100
Case Temperature Tc [°C]
150
2SK2185
Gate Threshold Voltage
Gate Threshold Voltage VTH [V]
5
4
3
2
1
0
VDS = 10V
ID = 1mA
TYP
-50
0
50
100
Case Temperature Tc [°C]
150
2SK2185
Safe Operating Area
100
Drain Current ID [A]
10
100µs
200µs
1
R DS(ON)
limit
1ms
10ms
0.1
DC
Tc = 25°C
Single Pulse
0.01
1
10
100
Drain-Source Voltage VDS [V]
1000
Transient Thermal Impedance θjc(t) [°C/W]
0.01
10-5
0.1
1
10
100
10-4
10-3
2SK2185
10-1
Time t [s]
10-2
100
Transient Thermal Impedance
101
102
2SK2185
Capacitance
1000
Capacitance Ciss Coss Crss [pF]
Ciss
100
Coss
Crss
Tc=25°C
TYP
10
0
20
40
60
80
Drain-Source Voltage VDS [V]
100
2SK2185
Power Derating
100
Power Derating [%]
80
60
40
20
0
0
50
100
Case Temperature Tc [°C]
150
2SK2185
Gate Charge Characteristics
20
400
15
VDD = 400V
200V
300
100V
10
VDS
VGS
200
5
100
ID = 5A
0
0
10
20
30
Gate Charge Qg [nC]
40
50
0
Gate-Source Voltage VGS [V]
Drain-Source Voltage VDS [V]
500