FAIRCHILD KSD1692

KSD1692
KSD1692
Feature
•
•
•
•
High Dc Durrent Gain
Low Collector Saturation Voltage
Built-in a Damper Diode at E-C
High Power Dissipation : PC = 1.3W (Ta=25°C)
TO-126
1
1. Emitter
2.Collector
3.Base
NPN Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current (DC)
3
A
ICP
*Collector Current (Pulse)
5
A
PC
Collector Dissipation (Ta=25°C)
1.3
A
PC
Collector Dissipation (TC=25°C)
15
W
TJ
Junction Temperature
150
W
TSTG
Storage Temperature
- 55 ~ 150
°C
Parameter
Value
Units
* PW≤10ms, duty Cycle≤50%
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
ICBO
Parameter
Collector Cut-off Current
Test Condition
VCB = 100V, IE = 0
Min.
Typ.
Max.
10
Units
µA
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
hFE1
hFE2
*DC Current Gain
VCE = 2V, IC = 1.5A
VCE = 2V, IC = 3A
VCE(sat)
*Collector-Emitter Saturation Voltage
IC = 1.5A, IB = 1.5mA
0.9
1.2
VBE(sat)
*Base-Emitter Saturation Voltage
IC = 1.5A, IB = 1.5mA
1.5
2
tON
Turn ON Time
0.5
µs
tSTG
Storage Time
2
µs
tF
Fall Time
VCC = 40V, IC = 1.5A
IB1 = - IB2 = 1.5mA
RL = 27Ω
1
µs
2
2K
1K
mA
20K
V
V
* Pulse test: PW≤350µs, duty Cycle≤2% Pulsed
hFE Classificntion
Classification
O
Y
G
hFE1
2000 ~ 5000
4000 ~ 12000
6000 ~ 20000
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSD1692
Typical Characteristics
100000
IB = 450uA
IB = 400uA
IB = 350uA
IB = 300uA
IB = 250uA
4
VCE = 2V
Pulsed
00uA
IB = 5
IB = 200u
3
hFE, DC CURRENT GAIN
Ic[A], COLLECTOR CURRENT
5
A
IB = 150uA
IB = 100uA
2
IB = 50uA
1
10000
1000
0
0
1
2
3
4
100
0.01
5
0.1
Figure 1. Static Characteristic
10
Figure 2. DC current Gain
100
10
Ic = 1000 IB
Pulsed
Ic(Pulse)
10
Ic(DC)
IC[A], COLLECTOR CURRENT
Dis
s
10
nL
im
ite
d
Lim
ite
d
V CE(sat)
tio
1
m
20
0m s
s
s/b
V BE(sat)
1
ipa
s
0u
10 us
0
30
s
1m
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0.1
o
Tc=25 C
Single Pulse
0.1
0.01
0.1
1
10
1
IC[A], COLLECTOR CURRENT
10
100
500
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 4. Forward Bias Safe Operating Areas
20
160
PC[W], POWER DISSIPATION
140
dT[%], Ic DERATING
120
100
80
s/b
DI
60
40
LIM
ITE
D
SS
IP
A
TI
O
20
N
LI
M
IT
ED
15
10
5
0
0
25
50
75
100
125
150
175
200
o
TC[ C], CASE TEMPERATURE
Figure 5. Derating Curve of Safe Operating Areas
©2000 Fairchild Semiconductor International
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 6. Power Derating
Rev. A, February 2000
KSD1692
Package Demensions
8.00 ±0.30
11.00
ø3.20 ±0.10
±0.20
3.25 ±0.20
14.20MAX
3.90
±0.10
TO-126
(1.00)
(0.50)
0.75 ±0.10
#1
2.28TYP
[2.28±0.20]
2.28TYP
[2.28±0.20]
16.10
±0.30
13.06
0.75 ±0.10
±0.20
1.75 ±0.20
1.60 ±0.10
+0.10
0.50 –0.05
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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POP™
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Quiet Series™
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INTERNATIONAL.
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when properly used in accordance with instructions for use
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2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E