NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX618 THERMAL CHARACTERISTICS PARAMETER SYMBOL Thermal Resistance: Junction to Ambient1 Junction to Ambient2 Rth(j-amb)1 Rth(j-amb)2 MAX. UNIT 175 116 °C/W °C/W 180 160 D=1(D.C.) t1 120 100 tP D=t1 tP D=0.5 40 D=0.2 D=0.1 D=0.05 Single Pulse 20 0 0.1ms 1ms 10ms 100ms 1s 10s 100s 0.50 e 60 0.75 r tu ra 80 ISSUE 2 JULY 1995 FEATURES * 10A Peak pulse current * Excellent hFE characteristics up to10A (pulsed) * Extremely low saturation voltage e.g. 7mV typ. * IC cont 3.5A C B APPLICATIONS * Power MOSFET gate driver in conjunction with complementary ZTX718 PARAMETER SYMBOL E-Line TO92 Compatible VALUE UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 10 A 0.25 -40 0 Pulse Width Transient Thermal Resistance Continuous Collector Current IC 3.5 A T -Temperature (° C) Base Current IB 500 mA Derating curve Practical Power Dissipation* Ptotp 1.5 W Power Dissipation Ptot 1 W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C 40 80 120 160 200 * Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (516) 543-7100 Fax: (516) 864-7630 E ABSOLUTE MAXIMUM RATINGS. 1.0 pe em tt en bi Am 140 Max Power Dissipation - (Watts) Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. ZTX618 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide Zetex plc 1997 Internet: http://www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. ZTX618 ZTX618 TYPICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 20 100 V IC=100µ A Collector-Emitter Breakdown Voltage V(BR)CEO 20 27 V IC=10mA* 0.2 Emitter-Base Breakdown Voltage V(BR)EBO 5 8.3 V IE=100µ A 0.1 Collector Cut-Off Current ICBO nA VCB=16V 100 0.3 IC/IB=50 0.3 0 IC/IB=100 IC/IB=50 IC/IB=10 25°C 0.2 -55°C 0.1 10mA 1mA 100mA 1A 0 10A 10mA 1mA IC-Collector Current IEBO 100 nA VEB=4V Collector Emitter Cut-Off Current ICES 100 nA VCES=16V Collector-Emitter Saturation Voltage VCE(sat) VBE(sat) VBE(on) Static Forward Current Transfer Ratio hFE 7 80 210 15 150 255 mV mV mV IC=0.1A, IB=10mA* IC=1A, IB=10mA* IC=3.5A, IB=50mA* 0.93 1.05 V IC=3.5A, IB=50mA* 0.86 1.0 V IC=3.5A, VCE=2V* 1.2 fT 400 450 300 85 100 140 IC=10mA, VCE=2V* IC=200mA, VCE=2V* IC=3A, VCE=2V* IC=10A, VCE=2V* MHz IC=50mA, VCE=10V f=100MHz Cobo 23 Turn-On Time t(on) Turn-Off Time t(off) 30 pF VCB=10V, f=1MHz 170 ns 400 ns VCC=10V, IC=1A IB1=-IB2=10mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 1A 10A IC/IB=50 -55°C 0.8 25°C 25°C 0.6 225 -55°C 100°C 0.4 0.2 0 1mA 10mA 100mA 1A 10A 0 1mA 10mA 1.0 VBE(sat) v Ic 10 VCE=2V Single Pulse Test Tamb=25C -55°C 0.8 1 25°C 100°C 0.4 0.1 0.2 0 100mA IC-Collector Current hFE v IC 0.6 Output Capacitance 10A 1.0 IC-Collector Current 200 300 170 40 1A VCE(sat) v IC VCE=2V 100°C 100mA IC-Collector Current VCE(sat) v IC 450 Base-Emitter Turn-On Voltage Transition Frequency 0.4 25°C 100°C Emitter Cut-Off Current Base-Emitter Saturation Voltage 0.4 1mA 10mA 100mA 1A 10A 0.01 0.1V DC 1s 100ms 10ms 1ms 100µs 1V 10V IC-Collector Current VCE - Collector Voltage VBE(on) v IC Safe Operating Area 100V ZTX618 ZTX618 TYPICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 20 100 V IC=100µ A Collector-Emitter Breakdown Voltage V(BR)CEO 20 27 V IC=10mA* 0.2 Emitter-Base Breakdown Voltage V(BR)EBO 5 8.3 V IE=100µ A 0.1 Collector Cut-Off Current ICBO nA VCB=16V 100 0.3 IC/IB=50 0.3 0 IC/IB=100 IC/IB=50 IC/IB=10 25°C 0.2 -55°C 0.1 10mA 1mA 100mA 1A 0 10A 10mA 1mA IC-Collector Current IEBO 100 nA VEB=4V Collector Emitter Cut-Off Current ICES 100 nA VCES=16V Collector-Emitter Saturation Voltage VCE(sat) VBE(sat) VBE(on) Static Forward Current Transfer Ratio hFE 7 80 210 15 150 255 mV mV mV IC=0.1A, IB=10mA* IC=1A, IB=10mA* IC=3.5A, IB=50mA* 0.93 1.05 V IC=3.5A, IB=50mA* 0.86 1.0 V IC=3.5A, VCE=2V* 1.2 fT 400 450 300 85 100 140 IC=10mA, VCE=2V* IC=200mA, VCE=2V* IC=3A, VCE=2V* IC=10A, VCE=2V* MHz IC=50mA, VCE=10V f=100MHz Cobo 23 Turn-On Time t(on) Turn-Off Time t(off) 30 pF VCB=10V, f=1MHz 170 ns 400 ns VCC=10V, IC=1A IB1=-IB2=10mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 1A 10A IC/IB=50 -55°C 0.8 25°C 25°C 0.6 225 -55°C 100°C 0.4 0.2 0 1mA 10mA 100mA 1A 10A 0 1mA 10mA 1.0 VBE(sat) v Ic 10 VCE=2V Single Pulse Test Tamb=25C -55°C 0.8 1 25°C 100°C 0.4 0.1 0.2 0 100mA IC-Collector Current hFE v IC 0.6 Output Capacitance 10A 1.0 IC-Collector Current 200 300 170 40 1A VCE(sat) v IC VCE=2V 100°C 100mA IC-Collector Current VCE(sat) v IC 450 Base-Emitter Turn-On Voltage Transition Frequency 0.4 25°C 100°C Emitter Cut-Off Current Base-Emitter Saturation Voltage 0.4 1mA 10mA 100mA 1A 10A 0.01 0.1V DC 1s 100ms 10ms 1ms 100µs 1V 10V IC-Collector Current VCE - Collector Voltage VBE(on) v IC Safe Operating Area 100V NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX618 THERMAL CHARACTERISTICS PARAMETER SYMBOL Thermal Resistance: Junction to Ambient1 Junction to Ambient2 Rth(j-amb)1 Rth(j-amb)2 MAX. UNIT 175 116 °C/W °C/W 180 160 D=1(D.C.) t1 120 100 tP D=t1 tP D=0.5 40 D=0.2 D=0.1 D=0.05 Single Pulse 20 0 0.1ms 1ms 10ms 100ms 1s 10s 100s 0.50 e 60 0.75 r tu ra 80 ISSUE 2 JULY 1995 FEATURES * 10A Peak pulse current * Excellent hFE characteristics up to10A (pulsed) * Extremely low saturation voltage e.g. 7mV typ. * IC cont 3.5A C B APPLICATIONS * Power MOSFET gate driver in conjunction with complementary ZTX718 PARAMETER SYMBOL E-Line TO92 Compatible VALUE UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 10 A 0.25 -40 0 Pulse Width Transient Thermal Resistance Continuous Collector Current IC 3.5 A T -Temperature (° C) Base Current IB 500 mA Derating curve Practical Power Dissipation* Ptotp 1.5 W Power Dissipation Ptot 1 W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C 40 80 120 160 200 * Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (516) 543-7100 Fax: (516) 864-7630 E ABSOLUTE MAXIMUM RATINGS. 1.0 pe em tt en bi Am 140 Max Power Dissipation - (Watts) Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. ZTX618 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide Zetex plc 1997 Internet: http://www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.