APT12080JVFR
1200V
POWER MOS V ®
S
S
27
2
T-
D
G
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
• Faster Switching
Ω
0.800Ω
15A
SO
"UL Recognized"
ISOTOP ®
• Avalanche Energy Rated
D
FREDFET
• Lower Leakage
• Popular SOT-227 Package
G
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT12080JVFR
UNIT
1200
Volts
Drain-Source Voltage
15
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
450
Watts
Linear Derating Factor
3.60
W/°C
PD
TJ,TSTG
60
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
1
Volts
-55 to 150
°C
300
Amps
15
(Repetitive and Non-Repetitive)
1
50
4
mJ
2500
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
1200
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID= 7.5A)
TYP
MAX
UNIT
Volts
0.800
Ohms
Zero Gate Voltage Drain Current (VDS = 1200, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 960V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
4-2004
Characteristic / Test Conditions
050-5842 Rev A
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT12080JVFR
Test Conditions
Characteristic
MIN
TYP
MAX
Ciss
Input Capacitance
VGS = 0V
6500
7800
Coss
Output Capacitance
VDS = 25V
530
740
Crss
Reverse Transfer Capacitance
f = 1 MHz
250
375
VGS = 10V
325
485
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
29
145
45
215
VGS = 15V
16
32
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
3
Gate-Drain ("Miller ") Charge
t d(on)
Turn-on Delay Time
tr
Rise Time
t d(off)
Turn-off Delay Time
tf
VDD = 0.5 VDSS
12
24
ID = ID [Cont.] @ 25°C
59
90
RG = 0.6Ω
12
24
TYP
MAX
Fall Time
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MIN
15
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
(Body Diode)
60
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -ID [Cont.])
1.3
Volts
18
V/ns
dv/
Peak Diode Recovery
dt
dv/
dt
5
t rr
Reverse Recovery Time
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
350
Tj = 125°C
700
Q rr
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
2
Tj = 125°C
6
IRRM
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
12
Tj = 125°C
22
Amps
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
MAX
UNIT
0.28
40
°C/W
2500
VIsolation
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Torque
Maximum Torque for Device Mounting Screws and Electrical Terminations.
Volts
13
lb•in
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 22.22mH, R = 25Ω, Peak I = 15A
temperature.
j
G
L
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
5 I ≤ I [Cont.], di/ = 100A/µs, T ≤ 150°C, R = 2.0Ω V = 200V.
S
D
j
G
R
dt
APT Reserves the right to change, without notice, the specifications and information contained herein.
1 Repetitive Rating: Pulse width limited by maximum junction
D=0.5
0.1
0.2
0.05
0.1
0.05
0.01
0.005
Note:
0.02
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-5842 Rev A
4-2004
0.3
0.01
SINGLE PULSE
0.001
10-5
10-4
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance Curves
VGS=5V, 6V, 7V, 10V & 15V
24
18
4.5V
12
6
4V
30
20
TJ = -55°C
TJ = +125°C
10
TJ = +25°C
0
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
12
8
4
0
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
1.25
V
GS
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D
1.20
1.15
VGS=10V
1.10
VGS=20V
1.05
1.00
0.95
0
8
16
24
32
40
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
-50
D
V
2.5
4V
1.2
I = 0.5 I [Cont.]
D
6
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
25
3.0
4.5V
12
1.1
1.0
0.9
0.8
4-2004
ID, DRAIN CURRENT (AMPERES)
16
18
0.7
0.6
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-5842 Rev A
ID, DRAIN CURRENT (AMPERES)
40
24
0
5
10
15
20
25
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
120
240
360
480
600
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
VGS=5V, 6V, 7V, 10V & 15V
0
0
50
APT12080JVFR
30
ID, DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
30
100µS
OPERATION HERE
LIMITED BY RDS (ON)
10
10,000
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
10µS
50
1mS
5
10mS
1
100mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
.5
.1
16
D
VDS=120V
VDS=240V
12
VDS=600V
8
1,000
Coss
500
Crss
.01
.1
1
10
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
I = I [Cont.]
D
5,000
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
20
Ciss
100
1
5 10
50 100
500 1200
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
4
0
APT12080JVFR
30,000
100
0
100
200
300
400
500
600
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
100
50
TJ =+150°C
TJ =+25°C
10
5
1
.5
.1
0
0.4
0.8
1.2
1.6
2.0
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Source
050-5842 Rev A
4-2004
30.1 (1.185)
30.3 (1.193)
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
"UL Recognized" File No. E145592
ISOTOP® is a Registered Trademark of SGS Thomson.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.