ADPOW APTGF50X120TE3

APTGF50X120TE3
3 Phase bridge
NPT IGBT Power Module
VCES = 1200V
IC = 50A @ Tc = 80°C
Application
•
AC Motor control
Features
Non Punch Through (NPT) IGBT®
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
•
•
•
•
•
17
16 15
Benefits
20
14
21
13
1 2
3 4
5 6
7 8
9 10
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
SCSOA
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
11 12
Absolute maximum ratings
Symbol
VCES
•
•
•
•
•
•
•
Short Circuit Save Operating Area
TC = 25°C
Max ratings
1200
78
50
150
±20
400
Tj = 125°C
[email protected]
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
A
July, 2003
18
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-3
APTGF50X120TE3 – Rev 0
19
APTGF50X120TE3
ICES
All ratings @ Tj = 25°C unless otherwise specified
Zero Gate Voltage Collector Current
VCE(on)
Collector Emitter on Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Td(on)
Tr
Td(off)
Tf
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Turn-off Delay Time
Fall Time
Reverse diode ratings and characteristics
Symbol Characteristic
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Tj = 25°C
IF = 50A
VGE = 0V
Tj = 125°C
IF = 50A
VR = 600V
Tj = 125°C
di/dt =800A/µs
IF = 50A
Tj = 25°C
VR = 600V
di/dt =800A/µs Tj = 125°C
Temperature sensor NTC
Symbol Characteristic
R25
Resistance @ 25°C
B 25/50 T25 = 298.16 K
RT =
Min
2.0
exp B25 / 50
1 1
−
T25 T
Max
0.8
4
2.5
3.1
1
4.5
Min
Typ
3300
500
220
44
Typ
2.3
1.8
Max
Unit
V
pF
ns
Max
2.8
200
Unit
V
ns
2.8
µC
8
Typ
5
3375
mA
V
nA
380
70
Min
Unit
V
3.0
3.7
6.5
200
56
Min
R25
Typ
1200
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 50A
RG = 22Ω
Rise Time
VF
Test Conditions
VGE = 0V, IC = 3mA
Tj = 25°C
VGE = 0V
VCE = 1200V
Tj = 125°C
T
j = 25°C
VGE =15V
IC = 50A
Tj = 125°C
VGE = VCE , IC = 2 mA
VGE = 20V, VCE = 0V
Max
Unit
kΩ
K
T: Thermistor temperature
RT: Thermistor value at T
APT website – http://www.advancedpower.com
July, 2003
Symbol Characteristic
BVCES Collector - Emitter Breakdown Voltage
2-3
APTGF50X120TE3 – Rev 0
Electrical Characteristics
APTGF50X120TE3
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
To Heatsink
Package Weight
Min
IGBT
Diode
Typ
Max
0.35
0.7
2500
M5
-40
-40
-40
3
Unit
°C/W
V
150
125
125
4.5
300
°C
N.m
g
Package outline
PIN 1
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
3-3
APTGF50X120TE3 – Rev 0
July, 2003
PIN 21