APTGF300U120D Single Switch with Series diodes NPT IGBT Power Module VCES = 1200V IC = 300A @ Tc = 80°C Application • Zero Current Switching resonant mode EK E C G CK C EK G Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area Tc = 25°C Max ratings 1200 400 300 800 ±20 2080 Tj = 150°C 600A @ 1200V Tc = 25°C Tc = 80°C Tc = 25°C Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–5 APTGF300U120D – Rev 0 July, 2004 E CK Features • Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration APTGF300U120D Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Series diode ratings and characteristics Symbol Characteristic IF(A V) VF Qrr Test Conditions VGE = 0V, IC = 4mA Tj = 25°C VGE = 0V VCE = 1200V Tj = 125°C Tj = 25°C VGE =15V IC = 300A Tj = 125°C VGE = VCE, IC = 12mA VGE = ±20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz Min Test Conditions 50% duty cycle Diode Forward Voltage IF = 300A IF = 400A IF = 400A IF = 300A Min Tc = 85°C VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Package Weight M6 M5 APT website – http://www.advancedpower.com 2500 -40 -40 -40 3 2 V Typ 21 2.9 1.52 70 50 500 30 17 18 Max Unit Typ Max 40 IGBT Diode mA V µA Tj = 125°C Junction to Case 3.9 Unit V 6.5 ±1 13 RthJC Wt 6 Tj = 25°C Min To heatsink For terminals 0.4 25 3.2 4 Tj = 150°C Symbol Characteristic Mounting torque Max 250 2.2 2.4 2.2 Thermal and package characteristics Torque Typ 4.5 Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 300A R G = 2Ω Maximum Average Forward Current Reverse Recovery Charge Min 1200 Typ nF ns mJ Unit A 2.5 V µC Max 0.06 0.13 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g 2–5 APTGF300U120D – Rev 0 July, 2004 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics APTGF300U120D APT website – http://www.advancedpower.com 3–5 APTGF300U120D – Rev 0 July, 2004 Package outline APTGF300U120D Typical Performance Curve Output characteristics (V GE=15V) Output characteristics (VGE =10V) 350 250µs Pulse Test < 0.5% Duty cycle 400 350 T J=25°C Ic, Collector current (A) Ic, Collector current (A) 450 300 250 200 150 100 T J=125°C 50 200 150 100 T J=125°C 50 0 0 1 2 3 VCE, Collector to Emitter Voltage (V) 4 0 1 2 3 V CE , Collector to Emitter Voltage (V) Transfer Characteristics 250µs Pulse Test < 0.5% Duty cycle 500 400 300 200 100 0 4 6 8 10 VGE, Gate to Emitter Voltage (V) 4 Gate Charge 20 V GE, Gate to Emitter Voltage (V) 600 Ic, Collector Current (A) TJ=25°C 250 0 1000 250µs Pulse Test < 0.5% Duty cycle 300 IC = 300A TJ = 25°C 16 VCE=600V 12 VCE=800V 8 4 0 0 12 500 1000 1500 2000 Gate Charge (nC) 2500 Capacitance vs Collector to Emitter Voltage Switching times vs collector current 100 VCE = 600V VGE=±15V RG=2Ω TJ = 125°C 100 C, Capacitance (nF) time (ns) tdoff tdon tf tr Cies 10 Coes Cres 1 10 100 200 300 Ic, Collector current (A) 400 0 80 Eon 60 Eoff 40 30 400 Ic, DC Collector Current (A) Switching Energy losses (mJ) VCE = 600V VGE=±15V IC=300A TJ = 125°C 20 DC Collector Current vs Case Temperature Switching energy losses vs Gate resistance 120 100 10 VCE, Collector to Emitter Voltage (V) 20 350 300 250 200 150 100 50 0 0 0 2 4 6 8 10 12 Gate resistance (Ohms) 14 16 0 25 50 75 100 125 TC, Case Temperature (°C) APT website – http://www.advancedpower.com 150 4–5 APTGF300U120D – Rev 0 July, 2004 0 APTGF300U120D Minimum Switching Safe Operating Switching times vs gate resistor 10000 VCE = 600V, VGE=±15V IC =300A, TJ = 125°C 600 500 tdoff 1000 time (ns) IC, Collector current (A) A 700 400 300 200 tdon tr 100 tf 100 0 10 0 300 600 900 1200 1500 V CE , Collector to Emitter Voltage (V) 0 5 10 15 Gate resistance (Ohms) 20 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.07 0.06 0.05 0.04 0.03 0.9 0.7 0.5 0.02 0.3 0.01 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10 VCE = 800V D = 50% RG = 2Ω ZCS TJ = 125°C 80 60 TC = 75°C Hard switching 40 ZCS 20 0 50 100 150 200 250 300 350 IC, Collector Current (A) 400 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 5–5 APTGF300U120D – Rev 0 July, 2004 Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 100