140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF544 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, high Frequency, high breakdown Transistor • Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz • High Collector Base Breakdown Voltage - BVCBO = 100 V (min) • High FT - 1400 MHz 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit VCEO Collector-Emitter Voltage 70 Vdc VCBO Collector-Base Voltage 100 Vdc VEBO Emitter-Base Voltage 3.0 Vdc IC Collector Current 400 mA 3.5 20 Watts mW/ ºC Thermal Data P D Total Device Dissipation @ TA = 25ºC Derate above 25ºC Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MRF544 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCBO BVEBO ICBO ICES Test Conditions Value Min. Typ. Max. Unit Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) 70 - - Vdc Collector-Base Breakdown Voltage (IC= 100 µAdc, IE=0) 100 - - Vdc Emitter-Base Breakdown Voltage (IE = 100 µAdc, IC = 0) 3.0 - - Vdc Collector Cutoff Current (VCE = 80 Vdc, IE = 0 Vdc) - - 20 µA Collector Cutoff Current (VCE = 80 Vdc, IE = 0 Vdc) - 1.0 100 µA 15 - - - (on) HFE DC Current Gain (IC = 50 mAdc, VCE = 6.0 Vdc) DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit COB Output Capacitance (VCB = 10Vdc, IE=0, f=1 MHz) - 2.5 - pF CIB Input Capacitance (VEB = 3Vdc, IE=0, f=1 MHz) - 6.1 - pF 1000 1500 - MHz fT Current-Gain - Bandwidth Product (IC = 50 mAdc, VCE = 10 Vdc, f = 250 MHz) Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MRF544 FUNCTIONAL Symbol G U max MAG |S21| 2 Test Conditions Maximum Unilateral Gain Maximum Available Gain Insertion Gain Value Min. Typ. Max. Unit IC = 50 mAdc, VCE = 25Vdc, f = 200 MHz - 13.5 - dB IC = 50 mAdc, VCE = 25Vdc, f = 200 MHz - 13.5 - dB IC = 50 mAdc, VCE = 25Vdc, f = 200 MHz 11.7 12.7 - dB Table 1. Common Emitter S-Parameters, @ VCE = 25 V, IC = 50 mA f (MHz) 100 200 300 400 500 600 700 800 900 1000 S11 |S11| S21 0.221 ∠φ -143 0.219 |S21| S12 8.54 ∠φ 97 -108 4.36 0.250 -72 0.329 |S12| S22 |S22| 0.047 ∠φ 82 0.508 ∠φ 14 87 0.091 87 0.413 49 2.98 79 0.141 87 0.406 82 -34 2.39 72 0.178 84 0.445 108 0.338 9 2.11 70 0.237 87 0.409 140 0.348 51 1.83 65 0.292 86 0.412 176 0.371 94 1.61 61 0.35 86 0.411 -147 0.374 140 1.44 59 0.383 85 0.413 -112 0.402 -170 1.45 63 0.428 88 0.386 -78 0.438 -126 1.56 64 0.503 86 0.405 -42 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MRF544 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.