KSE13003T KSE13003T High Voltage Switch Mode Applications • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 700 Units V 400 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 9 V IC Collector Current (DC) 1.5 A ICP Collector Current (Pulse) 3 A IB Base Current PC Collector Dissipation (TC=25°C) TJ TSTG 0.75 A 30 W Junction Temperature 150 °C Storage Temperature - 65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage Test Condition IC = 5mA, IB = 0 Min. 400 Typ. Max. Units V 10 µA IEBO Emitter Cut-off Current VEB = 9V, IC = 0 hFE *DC Current Gain VCE = 2V, IC = 0.5A VCE = 2V, IC =1A VCE(sat) *Collector Emitter Saturation Voltage IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.25A IC = 1.5A, IB = 0.5A 0.5 1 3 V V V VBE(sat) *Base Emitter Saturation Voltage IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.25A 1 1.2 V V Cob Output Capacitance VCB = 10V , f = 0.1MHz fT Current Gain Bandwidth Product VCE = 10V, IC = 0.1A VCC =125V, IC = 1A IB1 = 0.2A, IB2 = - 0.2A RL = 125Ω tON Turn On Time tSTG Storage Time tF Fall Time 8 5 40 21 pF 4 MHz 1.1 µs 4.0 µs 0.7 µs * Pulse Test: Pulse Width=5ms, Duty Cycle≤10% ©2002 Fairchild Semiconductor Corporation Rev. B, December 2002 KSE13003T Typical Characteristics 100 VCE = 2V IB = 500mA IB = 450mA IB = 400mA 1.6 1.2 IB = 350mA IB = 300mA IB = 250mA IB = 200mA IB = 150mA IB = 100mA 0.8 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 2.0 IB = 50mA 10 1 0.4 IB = 0mA 0.1 0.01 0.0 0 1 2 3 4 5 0.1 VCE[V], COLLECTOR-EMITTER VOLTAGE 10 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 10 IC = 4 IB tSTG VBE(sat) 1 1 tSTG, tF[µs], TIME VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1 0.1 tF 0.1 VCE(sat) 0.01 0.01 0.1 1 0.01 0.1 10 1 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Switching Time 40 10 35 µ 10 ICMAX. (pulse) PC[W], POWER DISSIPATION s IC[A], COLLECTOR CURRENT s 0µ 10 s 1m s 5m IC MAX. (DC) 1 0.1 30 25 20 15 10 5 0 0.01 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2002 Fairchild Semiconductor Corporation 1000 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. B, December 2002 KSE13003T Package Dimensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B, December 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1