BD439/441 BD439/441 Medium Power Linear and Switching Applications • Complement to BD440, BD442 respectively TO-126 1 NPN Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCES VCEO Parameter Value Units : BD439 : BD441 60 80 V V Collector-Emitter Voltage : BD439 : BD441 60 80 V V Collector-Emitter Voltage : BD439 : BD441 60 80 V V V Collector-Base Voltage VEBO Emitter-Base Voltage 5 IC Collector Current (DC) 4 A ICP *Collector Current (Pulse) 7 A IB Base Current PC Collector Dissipation (TC=25°C) TJ TSTG 1 A 36 W Junction Temperature 150 °C Storage Temperature - 65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BD439 : BD441 Test Condition IC = 100mA, IB = 0 Min. Typ. Max. 60 80 Units V V ICBO Collector Cut-off Current : BD439 : BD441 VCB = 60V, IE = 0 VCB = 80V, IE = 0 100 100 µA µA ICES Collector Cut-off Current : BD439 : BD441 VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 100 100 µA µA 1 mA : BD439 : BD441 : BD439 : BD441 : BD439 : BD441 VCE = 5V, IC = 10mA IEBO Emitter Cut-off Current hFE * DC Current Gain VEB = 5V, IC = 0 VCE =1V, IC = 500mA VCE = 1V, IC = 2A VCE(sat) * Collector-Emitter Saturation Voltage IC = 2A, IB = 0.2A VBE(on) * Base-Emitter ON Voltage VCE = 5V, IC = 10mA VCE = 1V, IC = 2A fT Current Gain Bandwidth Product VCE = 1V, IC = 250mA 20 15 40 40 25 15 130 130 140 140 0.8 V 1.5 V V 0.58 3 MHz * Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 BD439/441 Typical Characteristics 1 1000 100 10 1 0.01 0.1 1 IC = 10 IB VCE(sat)[V], SATURATION VOLTAGE hFE, DC CURRENT GAIN VCE = 1V 0.1 0.01 0.1 10 1 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage 1000 VCE = 1V 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.3 0.5 0.8 1.0 1.3 1.5 1.8 2.0 CCBO(pF), COLLECTOR BASE CAPACITANCE 5.0 IC[A], COLLECTOR CURRENT 10 100 10 1 0.1 1 VBE[V], BASE-EMITTER VOLTAGE 10 100 VCB[V], COLLECTOR BASE VOLTAGE Figure 3. Base-Emitter On Voltage Figure 4. Collector-Base Capacitance 48 IC MAX. (Pulsed) 10 ms 1m IC Max. (Continuous) s 10 1µs 0µ s 10µ s DC 1 BD439 BD441 0.1 1 10 36 30 24 18 12 6 0 100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2001 Fairchild Semiconductor Corporation PC[W], POWER DISSIPATION IC[A], COLLECTOR CURRENT 42 10 0 25 50 75 100 125 150 175 200 o TC[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. A1, June 2001 BD439/441 Package Demensions 8.00 ±0.30 11.00 ø3.20 ±0.10 ±0.20 3.25 ±0.20 14.20MAX 3.90 ±0.10 TO-126 (1.00) (0.50) 0.75 ±0.10 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 16.10 ±0.30 13.06 0.75 ±0.10 ±0.20 1.75 ±0.20 1.60 ±0.10 +0.10 0.50 –0.05 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H2