AMS3402 DESCRIPTION AMS3402 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. FEATURE PIN CONFIGURATION SOT-23-3L 3 D G S 1 2 1.Gate 2.Source 3.Drain 30V/2.8A, RDS(ON) = 48mΩ @VGS = 10V 30V/2.3A, RDS(ON) = 53mΩ @VGS = 4.5V 30V/1.5A, RDS(ON) = 80mΩ @VGS = 2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design PART MARKING SOT-23-3L 3 A2YA 2 1 Y: Year Code A: Week Code 1 Advanced Monolithic Systems http://www.ams-semitech.com AMS3402 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±12 V ID 4.0 2.8 A IDM 10 A Continuous Source Current (Diode Conduction) IS 1.25 A TA=25℃ TA=70℃ PD 1.25 0.8 W TJ 150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 100 Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation Operation Junction Temperature 2 Advanced Monolithic Systems http://www.ams-semitech.com ℃/W AMS3402 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ unless otherwise noted ) Parameter Symbol Condition Min V(BR)DSS VGS=0V,ID=-250uA 30 VGS(th) VDS=VGS,ID=250uA 0.8 IGSS Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current V 1.6 V VDS=0V,VGS=±12V ±100 nA VDS=24V,VGS=0V 1 10 Zero Gate Voltage Drain Current IDSS VDS=24V,VGS=0V TJ=55℃ On-State Drain Current ID(on) VDS≧4.5V,VGS=4.5V Drain-source On-Resistance RDS(on) VGS=10V,ID=2.8A VGS=4.5V,ID=4.5A VGS=2.5V,ID=1.5A 48 53 80 mΩ Forward Transconductance gfs VDS=4.5V,ID=5.8A 12 S Diode Forward Voltage VSD IS=1.25A,VGS=0V 0.8 1.2 4.2 6 4 uA A V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Output Capacitance Ciss Coss Reverse Transfer Capacitance Crss Turn-On Time td(on) Turn-Off Time VDS=15V VGS=4.5V ID≡2.0A tr td(off) tf 350 55 VDD=15V RL=10Ω ID=1.0A VGEN=10V RG=3Ω 2.5 http://www.ams-semitech.com nC 1.5 VDS=15V VGS=0V F=1MHz 3 Advanced Monolithic Systems 0.6 41 2.5 20 4 pF nS AMS3402 TYPICAL CHARACTERICTICS (25℃ unless otherwise noted) 4 Advanced Monolithic Systems http://www.ams-semitech.com AMS3402 TYPICAL CHARACTERICTICS (25℃ unless otherwise noted) 5 Advanced Monolithic Systems http://www.ams-semitech.com AMS3402 SOT-23-3L PACKAGE OUTLINE 6 Advanced Monolithic Systems http://www.ams-semitech.com