AMS9014 NPN Transistors SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Collector Current :IC=0.1A 1 0.55 Excellent hFE linearity +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V Collector Current -Continuous IC 0.1 A Collector Power Dissipation PC 0.2 W Junction Temperature Tj 150 Storage Temperature Tstg -55 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage VCBO Ic=100uA, IE=0 50 V Collector-emitter breakdown voltage VCEO Ic=1mA, IB=0 45 V Emitter-base Breakdown voltage VEBO IE=100 5 V Collector cutoff current ICBO VCB=50V, IE=0 Emitter cutoff current IEBO VEB=5V, IC=0 DC current gain hFE VCE=5V, IC=1mA A, IC=0 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA Base-emitter saturation voltage VBE(sat) IC=100mA, IB=10mA Transition frequency fT VCE=5V, IC=10mA,f=30MHZ 200 0.1 A 0.1 A 1000 0.5 1 150 V V MHz hFE Classification J6 Marking Rank L H hFE 200 to 450 450 to 1000 1 www.kesenes.com 1 Transistors Diodes SMD Type AMS9014 Typical Characteristics Fig.2 DC Current Gain Fig.1 Static Characteristic Fig.3 Base-Emitter Saturation Voltage Fig. 4 Current Gain Bandwidth Product Collector- Emitter Saturation Voltage 2 2