AMS AMS9435A

AMS9435A
P-Channel Enhancement Mode MOSFET
Features
•
Pin Description
-30V/-5.3A ,
RDS(ON)=65mΩ(typ.) @ VGS=-10V
RDS(ON)=100mΩ(typ.) @ VGS=-4.5V
•
•
•
Super High Dense Cell Design
1
S
Reliable and Rugged
Top View of SOP − 8
Lead Free Available (RoHS Compliant)
( 1, 2, 3 )
S S S
Applications
•
2
S
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
(4)
G
System s ; LCD-TV ; LCD-monitor ; Net-card
DD D
(5,6,7,8)
P-Channel MOSFET
Ordering and Marking Information
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3
S
4
G
AMS9435A
Absolute Maximum Ratings
Symbol
(TA = 25°C unless otherwise noted)
Parameter
Rating
VDSS
Drain-Source Voltage
-30
VGSS
Gate-Source Voltage
±25
ID*
Continuous Drain Current
IDM*
Pulsed Drain Current
IS*
Diode Continuous Forward Current
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
PD*
Maximum Power Dissipation
RθJA*
Unit
V
-5.3
VGS=-10V
A
-20
A
-2
150
°C
-55 to 150
TA=25°C
2
TA=100°C
0.8
Thermal Resistance-Junction to Ambient
W
°C/W
62.5
Note:
*Surface Mounted on 1in pad area, t ≤ 10sec.
2
Electrical Characteristics
(TA = 25°C unless otherwise noted)
AMS9435A
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
a
VSD
a
Test Condition
VGS=0V, IDS=-250µA
Gate Leakage Current
Gate Charge Characteristics
Qg
Total Gate Charge
Max.
-30
-1
-30
-1
Unit
V
TA=25°C
VDS=VGS, IDS=-250µA
Diode Forward Voltage
Typ.
VDS=-24V, VGS=0V
Gate Threshold Voltage
Drain-Source On-state Resistance
Min.
-1.5
µA
-2
V
VGS=±25V, VDS=0V
±100
nA
VGS=-10V, IDS=-4.6A
65
60
mΩ
100 95
VGS=-4.5V, IDS=-2A
ISD=-2A, VGS=0V
-0.9
-1.3
27
32
V
b
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS= -15V, VGS=-10V,
IDS= - 5A
6.5
2
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nC
AMS9435A
Electrical Characteristics (Cont.)
(TA = 25°C unless otherwise noted
AMS9435A
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
b
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
Tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
Tf
Turn-off Fall Time
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS=0V,
VDS=-15V,
Frequency=1.0MHz
545
pF
85
55
12
VDD=-15V, RL=15Ω,
IDS=-1A, VGEN=-10V,
RG=6Ω
8
15
25
46
5
10
ns
56
ns
30
nC
IDS=-4.6A, dlSD/dt=100A/µs
Notes:
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
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AMS9435A
Typical Characteristics
Drain Current
Power Dissipation
2.5
6
5
-ID - Drain Current (A)
Ptot - Power (W)
2.0
1.5
1.0
0.5
4
3
2
1
o
o
0.0
TA=25 C,VG=-10V
TA=25 C
0
20
40
60
0
80 100 120 140 160
40
60
80 100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
10
Normalized Transient Thermal Resistance
Rd
s(o
n)
Lim
it
-ID - Drain Current (A)
20
Tj - Junction Temperature (°C)
100
300µs
1ms
10ms
1
100ms
1s
0.1
DC
o
TA=25 C
0.01
0.01
0
0.1
1
10
2
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
2
1E-3
1E-4
100
-VDS - Drain - Source Voltage (V)
Mounted on 1in pad
o
RθJA : 62.5 C/W
1E-3
0.01
1
10 30
Square Wave Pulse Duration (sec)
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AMS9435A
Typical Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
20
140
VGS= -5, -6, -7, -8, -9, -10V
-ID - Drain Current (A)
16
130
RDS(ON) - On - Resistance (mΩ)
18
-4V
14
12
10
8
-3V
6
4
2
0
120
110
VGS= -4.5V
100
90
80
70
VGS= -10V
60
50
40
30
20
0
1
2
3
4
5
6
7
8
0
2
4
6
8
10 12 14 16 18 20
-VDS - Drain - Source Voltage (V)
-ID - Drain Current (A)
Transfer Characteristics
Gate Threshold Voltage
20
1.6
IDS = -250µA
18
Normalized Threshold Voltage
1.4
-ID - Drain Current (A)
16
14
12
10
8
o
Tj=125 C
6
o
o
Tj=25 C
4
Tj=-55 C
1.2
1.0
0.8
0.6
0.4
2
0
0
1
2
3
4
0.2
-50 -25
5
-VGS - Gate - Source Voltage (V)
0
25
75 100 125 150
Tj - Junction Temperature (°C)
5
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AMS9435A
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
20
2.00
VGS = -10V
10
IDS = -4.6A
1.50
o
-IS - Source Current (A)
Normalized On Resistance
1.75
1.25
1.00
0.75
0.50
Tj=150 C
o
Tj=25 C
1
0.25
o
0.00
-50 -25
[email protected]=25 C: 52mΩ
0
25
50
0.1
0.0
75 100 125 150
0.9
1.2
1.5
1.8
-VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
10
Frequency=1MHz
VD= -15V
9
ID= -4.6A
-VGS - Gate-source Voltage (V)
600
Ciss
C - Capacitance (pF)
0.6
Tj - Junction Temperature (°C)
700
500
400
300
200
Coss
100
Crss
0
0.3
0
5
10
15
20
25
8
7
6
5
4
3
2
1
0
30
0
2
4
8
10
QG - Gate Charge (nC)
-VDS - Drain - Source Voltage (V)
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12
AMS9435A
Packaging Information
E
e1
0.015X45
SOP-8 pin (Reference JEDEC Registration MS-012)
H
e2
D
A1
A
1
L
0.004max.
Dim
Millimeters
Inches
Min.
Max.
Min.
Max.
1.35
1.75
0.053
0.069
A1
0.10
0.25
0.004
0.010
D
4.80
5.00
0.189
0.197
E
3.80
4.00
0.150
0.157
H
5.80
6.20
0.228
0.244
L
0.40
1.27
0.016
0.050
e1
0.33
0.51
0.013
0.020
A
e2
φ1
1.27BSC
0°
0.50BSC
8°
0°
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8°
AMS9435A
Carrier Tape & Reel Dimensions
t
D
P
Po
E
P1
Bo
F
W
Ao
D1
Ko
T2
J
C
A
B
T1
Application
A
330±1
B
62 ± 1.5
SOP-8
F
5.5 ± 0.1
C
12.75 +
0.1 5
J
2 + 0.5
D
D1
Po
1.55±0.1 1.55+ 0.25 4.0 ± 0.1
T1
12.4 +0.2
T2
2± 0.2
W
12 + 0.3
- 0.1
P1
2.0 ± 0.1
Ao
6.4 ± 0.1
Bo
5.2± 0.1
P
8± 0.1
E
1.75± 0.1
Ko
t
2.1± 0.1 0.3±0.013
(mm)
Cover Tape Dimensions
Application
SOP- 8
Carrier Width
12
Cover Tape Width
9.3
8
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Devices Per Reel
2500