Analog Power AMCC922NE Dual N-Channel Logical Level MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • PRODUCT SUMMARY VDS (V) rDS(on) (OHM) 0.015 @ VGS = 4.5 V 20 0.018 @ VGS = 2.5V DFN 3x3 Top View S1 G1 S2 G2 Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe DFN 3x3 saves board space Fast switching speed High performance trench technology ID (A) 8.2 7.5 D 8 7 6 5 1 2 3 4 D G2 D G1 D D S1 S2 D N- Ch ann el N-Cha nne l MOS FET MOSF ET ESD Protected 2000V o ABSOLUTE MAXIMUM RATINGS (T A = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units Drain-Source Voltage VDS 20 V VGS Gate-Source Voltage ±8 o TA=25 C a Continuous Drain Current o ID TA=70 C b Pulsed Drain Current Continuous Source Current (Diode Conduction) a TA=25 C a o IDM ±40 IS 1.5 PD TA=70 C Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter a Maximum Junction-to-Ambient t <= 10 sec Steady State A 6.7 o Power Dissipation 8.2 A 1.5 W 1.0 TJ, Tstg o -55 to 150 Symbol Typ Max RthJA 72 100 83 120 o C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY C Publication Order Number: DS-AMCC922NE_B Analog Power AMCC922NE o SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED) Paramete r Symbol Test Conditions VGS(th) VGS = VDS , ID = 250 uA IGSS VDS = 0 V, VGS = ± 12 V ±100 Zero Gate Voltage Drain Current IDSS VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, T J = 55o C 1 On-State Drain Current A ID(on) VDS = 5 V, VGS = 4.5 V Drain-Source On-ResistanceA rDS(on) Min Typ Max Unit Static Gate-Threshold Voltage Gate-Body Leakage Forward TranconductanceA Diode Forward VoltageA Dynamic gfs VSD V 0.4 10 30 VGS = 4.5 V, ID = 2 A 0.015 VGS = 2.5 V, ID = 2 A 0.018 VDS = 10 V, ID = 2 A 25 I S = 2 A, VGS = 0 V 0.89 nA uA uA A Ω S V b Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Qg Qgs Qgd td(on) tr td(off) tf 13.4 VDS=10V, VGS=4.5V, I D=2A 0.9 nC 2.0 18 VDD =10V, VGS =4.5V, ID =1A , RG E N =10Ω 25 50 nS 25 Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. 2 PRELIMINARY Publication Order Number: DS-AMCC922NE_B Analog Power AMCC922NE Typical Electrical Characteristics (N-Channel) 30 30 3.0V VGS = 10.0V 4.5V 3.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 5V o 2.5V 20 15 10 2.0V 125 C 20 o 25 C 15 10 5 5 0 0 0 0.5 1 1.5 2 2.5 0.5 3 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V) Transfer Characteristics Output Characteristics 900 2.4 VGS = 2.0V 2.2 f = 1MHz VGS = 0 V 2 CAPACITANCE (pF) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE o TA = -55 C 25 25 1.8 1.6 2.5V 1.4 3.0V 3.5V 1.2 600 Ciss 300 Coss 4.0V 4.5V 10.0V 1 Crss 0.8 0 0 5 10 15 20 ID, DRAIN CURRENT (A) 25 0 30 4 8 12 16 VDS, DRAIN TO SOURCE VOLTAGE (V) On-Resistance vs. Drain Current Capacitance 5 1.6 ID = 4.5A VDS = 5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS , GATE-SOURCE VOLTAGE (V) 20 15V 4 10V 3 2 1 ID = 4.5A VGS = 10V 1.4 1.2 1 0.8 0.6 0 0 1 2 3 4 5 Qg, GATE CHARGE (nC) 6 7 -50 8 Gate Charge 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 On-Resistance vs. Junction Temperature 3 PRELIMINARY -25 Publication Order Number: DS-AMCC922NE_B Analog Power AMCC922NE Typical Electrical Characteristics (N-Channel) 0.09 100 ID = 2.25A RDS(ON) , ON-RESISTANCE (OHM) 10 o 1 TA = 125 C 0.1 o 25 C 0.01 o -55 C 0.001 0.07 0.05 o TA = 125 C 0.03 o TA = 25 C 0.0001 0.01 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 0 Source-Drain Diode Forward Voltage 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 On-Resistance vs. Gate-to-Source Voltage 50 2.2 P(pk), PEAK TRANSIENT POWER (W) -Vth, GATE-SOURCE THRESTHOLD VOLTAGE (V) VDS = VGS ID = -250mA 2 1.8 1.6 1.4 1.2 -50 -25 0 25 50 75 100 125 SINGLE PULSE RθJA = 208°C/W TA = 25°C 40 30 20 10 1 0 0.001 150 175 0.01 0.1 1 t1 , TIME (sec) 10 100 1000 TA, AMBIENT TEMPERATURE (oC) Vth Gate to Source Voltage Vs Temperature r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE IS, REVERSE DRAIN CURRENT (A) VGS = 0V Single Pulse Power, Junction-to-Ambient 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA =208 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Normalized Thermal Transient Junction to Ambient 4 PRELIMINARY Publication Order Number: DS-AMCC922NE_B Analog Power AMCC922NE Package Information 5 PRELIMINARY Publication Order Number: DS-AMCC922NE_B