AO4607 Complementary Enhancement Mode Field Effect Transistor General Description The AO4607 uses advanced trench technology MOSFETs to provide excellen RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications. A Schottky diode is co-packaged with the nchannel FET to minimize body diode losses. AO4607 is Pb-free (meets ROHS & Sony 259 specifications). AO4607L is a Green Product ordering option. AO4607 and AO4607L are electrically identical. S2/A G2 S1 G1 1 2 3 4 Features n-channel VDS (V) = 30V ID = 6.9A (VGS=10V) RDS(ON) < 28mΩ (VGS=10V) < 42mΩ (VGS=4.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.5V@1A D D2/K D2/K D1 D1 8 7 6 5 p-channel -30V -6A (VGS=1-0V) RDS(ON) < 35mΩ (VGS = -10V) < 58mΩ (VGS =- 4.5V) D K G SOIC-8 A G S2 n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 Continuous Drain 6.9 TA=25°C A Current TA=70°C 5.8 ID B Pulsed Drain Current IDM 30 TA=25°C TA=70°C Power Dissipation Junction and Storage Temperature Range Parameter Reverse Voltage Continuous Forward TA=25°C A Current TA=70°C Pulsed Diode Forward CurrentB Power Dissipation A TA=25°C TA=70°C Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. PD TJ, TSTG Symbol VDS ID IDM PD TJ, TSTG S p-channel 2 1.28 -55 to 150 Max p-channel -30 ±20 Units V V -6 -5 -30 A 2 1.28 -55 to 150 W °C Maximum Schottky 30 3 Units V 2 20 A 2 1.28 -55 to 150 W °C AO4607 Thermal Characteristics: n-channel, Schottky and p-channel Parameter Symbol t ≤ 10s Maximum Junction-to-Ambient A RθJA Steady-State Maximum Junction-to-Ambient A RθJL Steady-State Maximum Junction-to-Lead C t ≤ 10s Maximum Junction-to-Ambient A RθJA Steady-State Maximum Junction-to-Ambient A RθJL Steady-State Maximum Junction-to-Lead C t ≤ 10s Maximum Junction-to-Ambient A RθJA Steady-State Maximum Junction-to-Ambient A RθJL Steady-State Maximum Junction-to-Lead C Alpha Omega Semiconductor, Ltd. Device n-ch n-ch n-ch Typ 48 74 35 Max 62.5 110 60 Units °C/W °C/W °C/W p-ch p-ch p-ch 48 74 35 62.5 110 40 °C/W °C/W °C/W Schottky Schottky Schottky 47.5 71 32 62.5 110 40 °C/W °C/W °C/W AO4607 N-Channel + Schottky Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current. (Set by Schottky leakage) Conditions Min Typ Max VR=30V VR=30V, TJ=125°C 0.007 0.05 3.2 10 mA VR=30V, TJ=150°C 12 20 100 nA 1.9 3 V 22.5 28 31.3 38 34.5 42 ID=250µA, VGS=0V 30 IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=4.5V, VDS=5V 20 VGS=10V, ID=6.9A RDS(ON) TJ=125°C Static Drain-Source On-Resistance VGS=4.5V, ID=5.0A gFS Forward Transconductance VSD Body-Diode+Schottky Forward Voltage IS=1A Maximum Body-Diode+Schottky Continuous Current IS VDS=5V, ID=6.9A 10 DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance (FET+Schottky) Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge V A 15.4 0.45 680 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=6.9A Units mΩ mΩ S 0.5 V 5.5 A 820 pF 131 pF 77 pF 3 3.6 Ω 13.84 16.6 nC 6.74 nC Qgs Gate Source Charge 1.82 nC Qgd Gate Drain Charge 3.2 nC tD(on) Turn-On DelayTime 4.6 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr VGS=10V, VDS=15V, RL=2.2Ω, RGEN=3Ω 4.1 ns 20.6 ns 5.2 ns Body-Diode+Schottky Reverse Recovery Time IF=6.9A, dI/dt=100A/µs 13.7 Body-Diode+Schottky Reverse Recovery Charge IF=6.9A, dI/dt=100A/µs 4.1 16.5 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately Rev 4: Sept 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha Omega Semiconductor, Ltd. AO4607 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 10V 25 20 6V 5V 4.5V ID (A) 20 15 3.5V 10 12 8 125°C 4 VGS=3V 5 VDS=5V 16 4V ID(A) 30 25°C 0 0 0 1 2 3 4 0 5 0.5 Normalized On-Resistance 50 RDS(ON) (mΩ) 1.5 2 2.5 3 3.5 4 4.5 1.7 60 VGS=4.5V 40 30 20 VGS=10V 1.6 VGS=10V ID=6.9 1.5 1.4 VGS=4.5V 1.3 1.2 1.1 1 0.9 0.8 10 0 5 10 15 0 20 50 100 150 200 Temperature ( °C) Figure 4: On-Resistance vs. Junction Temperature ID (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 70 1.0E+01 60 ID=6.9 50 125°C 40 125°C 1.0E+00 IS Amps RDS(ON) (mΩ) 1 VGS (Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 1.0E-01 25°C 1.0E-02 30 FET + Schottky 25°C 20 1.0E-03 0.0 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body diode with parallel Schottky characteristics (Note F) AO4607 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 1000 10 VDS=15V ID=6.9A 800 Capacitance (pF) VGS (Volts) 8 f=1MHz VGS=0V 900 6 4 2 700 Ciss 600 500 400 300 Coss (FET + Schottky) 200 100 0 0 2 4 6 8 10 12 14 0 Qg (nC) Figure 7: Gate-Charge characteristics 100 100µs 0.1s 1s DC 0.1 1 10 ZθJA Normalized Transient Thermal Resistance 30 20 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 25 TJ(Max)=150°C TA=25°C 0 0.001 100 VDS (Volts) 10 20 10 10s 0.1 15 30 10µs 10ms 1 10 40 Power W ID (Amps) 1ms 10 5 VDS (Volts) Figure 8: Capacitance Characteristics: MOSFET + Parallel Schottky TJ(Max)=150°C TA=25°C RDS(ON) limited Crss 0 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AO4607 P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Conditions Min ID=-250µA, VGS=0V -30 -5 VDS=0V, VGS=±20V ±100 Gate Threshold Voltage VDS=VGS ID=-250µA -1.2 On state drain current VGS=-10V, VDS=-5V 30 RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time -2.4 35 45 VGS=-4.5V, ID=-5A 44 58 VDS=-5V, ID=-6A 13 -0.76 920 VGS=0V, VDS=-15V, f=1MHz VGS=-10V, VDS=-15V, ID=-6A VGS=-10V, VDS=-15V, RL=2.7Ω, RGEN=3Ω nA V mΩ mΩ S -1 V -4.2 A 1100 pF 190 pF 122 VGS=0V, VDS=0V, f=1MHz µA A 37 TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Crss -2 28 VGS=-10V, ID=-6A Output Capacitance Units -1 TJ=55°C ID(ON) Coss Max V VDS=-24V, VGS=0V VGS(th) IS Typ pF 3.6 4.4 Ω 18.5 22.2 nC 9.6 nC 2.7 nC 4.5 nC 7.7 ns 5.7 ns 20.2 ns 9.5 trr Body Diode Reverse Recovery Time IF=-6A, dI/dt=100A/µs 20 Qrr Body Diode Reverse Recovery Charge IF=-6A, dI/dt=100A/µs 8.8 ns 24 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any ven given application application depends depends onon thethe user's user's specific specific board board design. design. The The current current rating rating is based is based onon thethe t t ≤ 10s ≤ 10s thermal thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha Omega Semiconductor, Ltd. Rev 4: Sept 2005 AO4607 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 30 25 VDS=-5V 25 20 20 -4V -ID(A) -ID (A) 30 -4.5V -10V -6V -5V 15 -3.5V 10 5 15 10 125°C 5 VGS=-3V 0 25°C 0 0 1 2 3 4 5 0 0.5 60 Normalized On-Resistance VGS=-4.5V 50 45 RDS(ON) (mΩ) 1.5 2 2.5 3 3.5 4 4.5 5 1.60 55 40 35 VGS=-10V 30 25 20 15 ID=-6A 1.40 VGS=-10V 1.20 VGS=-4.5V 1.00 0.80 10 0 5 10 15 20 0 25 25 100 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.0E+01 90 ID=-6A 80 1.0E+00 1.0E-01 70 125°C 1.0E-02 -IS (A) RDS(ON) (mΩ) 1 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 60 125°C 50 1.0E-03 1.0E-04 40 30 25°C 1.0E-05 25°C 1.0E-06 20 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4607 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 10 1250 Capacitance (pF) 8 -VGS (Volts) 1500 VDS=-15V ID=-6A 6 4 2 Ciss 1000 750 500 Coss 0 0 4 8 12 16 0 20 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 10µs 100µs RDS(ON) limited 0.1s 1ms 1s 25 30 TJ(Max)=150°C TA=25°C 20 DC 0.1 1 10 100 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 20 10 10s 0.1 15 30 10ms 1.0 10 40 TJ(Max)=150°C, TA=25°C 10.0 5 -VDS (Volts) Figure 8: Capacitance Characteristics Power (W) -ID (Amps) 100.0 ZθJA Normalized Transient Thermal Resistance Crss 250 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 0.01 T 100 1000