AOSMD AO4607L

AO4607
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4607 uses advanced trench
technology MOSFETs to provide excellen
RDS(ON) and low gate charge. The
complementary MOSFETs may be used
in inverter and other applications. A
Schottky diode is co-packaged with the nchannel FET to minimize body diode
losses. AO4607 is Pb-free (meets ROHS
& Sony 259 specifications). AO4607L is
a Green Product ordering option.
AO4607 and AO4607L are electrically
identical.
S2/A
G2
S1
G1
1
2
3
4
Features
n-channel
VDS (V) = 30V
ID = 6.9A (VGS=10V)
RDS(ON)
< 28mΩ (VGS=10V)
< 42mΩ (VGS=4.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF<[email protected]
D
D2/K
D2/K
D1
D1
8
7
6
5
p-channel
-30V
-6A (VGS=1-0V)
RDS(ON)
< 35mΩ (VGS = -10V)
< 58mΩ (VGS =- 4.5V)
D
K
G
SOIC-8
A
G
S2
n-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Max n-channel
Symbol
VDS
Drain-Source Voltage
30
VGS
Gate-Source Voltage
±20
Continuous Drain
6.9
TA=25°C
A
Current
TA=70°C
5.8
ID
B
Pulsed Drain Current
IDM
30
TA=25°C
TA=70°C
Power Dissipation
Junction and Storage Temperature Range
Parameter
Reverse Voltage
Continuous Forward TA=25°C
A
Current
TA=70°C
Pulsed Diode Forward CurrentB
Power Dissipation
A
TA=25°C
TA=70°C
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
PD
TJ, TSTG
Symbol
VDS
ID
IDM
PD
TJ, TSTG
S
p-channel
2
1.28
-55 to 150
Max p-channel
-30
±20
Units
V
V
-6
-5
-30
A
2
1.28
-55 to 150
W
°C
Maximum Schottky
30
3
Units
V
2
20
A
2
1.28
-55 to 150
W
°C
AO4607
Thermal Characteristics: n-channel, Schottky and p-channel
Parameter
Symbol
t ≤ 10s
Maximum Junction-to-Ambient A
RθJA
Steady-State
Maximum Junction-to-Ambient A
RθJL
Steady-State
Maximum Junction-to-Lead C
t ≤ 10s
Maximum Junction-to-Ambient A
RθJA
Steady-State
Maximum Junction-to-Ambient A
RθJL
Steady-State
Maximum Junction-to-Lead C
t ≤ 10s
Maximum Junction-to-Ambient A
RθJA
Steady-State
Maximum Junction-to-Ambient A
RθJL
Steady-State
Maximum Junction-to-Lead C
Alpha Omega Semiconductor, Ltd.
Device
n-ch
n-ch
n-ch
Typ
48
74
35
Max
62.5
110
60
Units
°C/W
°C/W
°C/W
p-ch
p-ch
p-ch
48
74
35
62.5
110
40
°C/W
°C/W
°C/W
Schottky
Schottky
Schottky
47.5
71
32
62.5
110
40
°C/W
°C/W
°C/W
AO4607
N-Channel + Schottky Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current.
(Set by Schottky leakage)
Conditions
Min
Typ
Max
VR=30V
VR=30V, TJ=125°C
0.007
0.05
3.2
10
mA
VR=30V, TJ=150°C
12
20
100
nA
1.9
3
V
22.5
28
31.3
38
34.5
42
ID=250µA, VGS=0V
30
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
20
VGS=10V, ID=6.9A
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=4.5V, ID=5.0A
gFS
Forward Transconductance
VSD
Body-Diode+Schottky Forward Voltage
IS=1A
Maximum Body-Diode+Schottky Continuous Current
IS
VDS=5V, ID=6.9A
10
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance (FET+Schottky)
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
V
A
15.4
0.45
680
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=6.9A
Units
mΩ
mΩ
S
0.5
V
5.5
A
820
pF
131
pF
77
pF
3
3.6
Ω
13.84
16.6
nC
6.74
nC
Qgs
Gate Source Charge
1.82
nC
Qgd
Gate Drain Charge
3.2
nC
tD(on)
Turn-On DelayTime
4.6
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Qrr
VGS=10V, VDS=15V, RL=2.2Ω,
RGEN=3Ω
4.1
ns
20.6
ns
5.2
ns
Body-Diode+Schottky Reverse Recovery Time
IF=6.9A, dI/dt=100A/µs
13.7
Body-Diode+Schottky Reverse Recovery Charge
IF=6.9A, dI/dt=100A/µs
4.1
16.5
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any
given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides
a single pulse rating.
F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance
and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately
Rev 4: Sept 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AO4607
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
10V
25
20
6V
5V
4.5V
ID (A)
20
15
3.5V
10
12
8
125°C
4
VGS=3V
5
VDS=5V
16
4V
ID(A)
30
25°C
0
0
0
1
2
3
4
0
5
0.5
Normalized On-Resistance
50
RDS(ON) (mΩ)
1.5
2
2.5
3
3.5
4
4.5
1.7
60
VGS=4.5V
40
30
20
VGS=10V
1.6
VGS=10V
ID=6.9
1.5
1.4
VGS=4.5V
1.3
1.2
1.1
1
0.9
0.8
10
0
5
10
15
0
20
50
100
150
200
Temperature ( °C)
Figure 4: On-Resistance vs. Junction
Temperature
ID (Amps)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
70
1.0E+01
60
ID=6.9
50
125°C
40
125°C
1.0E+00
IS Amps
RDS(ON) (mΩ)
1
VGS (Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
1.0E-01
25°C
1.0E-02
30
FET + Schottky
25°C
20
1.0E-03
0.0
10
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body diode with parallel Schottky
characteristics
(Note F)
AO4607
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
1000
10
VDS=15V
ID=6.9A
800
Capacitance (pF)
VGS (Volts)
8
f=1MHz
VGS=0V
900
6
4
2
700
Ciss
600
500
400
300
Coss (FET + Schottky)
200
100
0
0
2
4
6
8
10
12
14
0
Qg (nC)
Figure 7: Gate-Charge characteristics
100
100µs
0.1s
1s
DC
0.1
1
10
ZθJA Normalized Transient
Thermal Resistance
30
20
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
25
TJ(Max)=150°C
TA=25°C
0
0.001
100
VDS (Volts)
10
20
10
10s
0.1
15
30
10µs
10ms
1
10
40
Power W
ID (Amps)
1ms
10
5
VDS (Volts)
Figure 8: Capacitance Characteristics: MOSFET +
Parallel Schottky
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
Crss
0
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
AO4607
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
Conditions
Min
ID=-250µA, VGS=0V
-30
-5
VDS=0V, VGS=±20V
±100
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.2
On state drain current
VGS=-10V, VDS=-5V
30
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
-2.4
35
45
VGS=-4.5V, ID=-5A
44
58
VDS=-5V, ID=-6A
13
-0.76
920
VGS=0V, VDS=-15V, f=1MHz
VGS=-10V, VDS=-15V, ID=-6A
VGS=-10V, VDS=-15V, RL=2.7Ω,
RGEN=3Ω
nA
V
mΩ
mΩ
S
-1
V
-4.2
A
1100
pF
190
pF
122
VGS=0V, VDS=0V, f=1MHz
µA
A
37
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
-2
28
VGS=-10V, ID=-6A
Output Capacitance
Units
-1
TJ=55°C
ID(ON)
Coss
Max
V
VDS=-24V, VGS=0V
VGS(th)
IS
Typ
pF
3.6
4.4
Ω
18.5
22.2
nC
9.6
nC
2.7
nC
4.5
nC
7.7
ns
5.7
ns
20.2
ns
9.5
trr
Body Diode Reverse Recovery Time
IF=-6A, dI/dt=100A/µs
20
Qrr
Body Diode Reverse Recovery Charge IF=-6A, dI/dt=100A/µs
8.8
ns
24
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
The value in any ven
given
application
application
depends
depends
onon
thethe
user's
user's
specific
specific
board
board
design.
design.
The
The
current
current
rating
rating
is based
is based
onon
thethe
t t ≤ 10s
≤ 10s
thermal
thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating. 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
Rev 4: Sept 2005
AO4607
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
30
25
VDS=-5V
25
20
20
-4V
-ID(A)
-ID (A)
30
-4.5V
-10V -6V
-5V
15
-3.5V
10
5
15
10
125°C
5
VGS=-3V
0
25°C
0
0
1
2
3
4
5
0
0.5
60
Normalized On-Resistance
VGS=-4.5V
50
45
RDS(ON) (mΩ)
1.5
2
2.5
3
3.5
4
4.5
5
1.60
55
40
35
VGS=-10V
30
25
20
15
ID=-6A
1.40
VGS=-10V
1.20
VGS=-4.5V
1.00
0.80
10
0
5
10
15
20
0
25
25
100
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.0E+01
90
ID=-6A
80
1.0E+00
1.0E-01
70
125°C
1.0E-02
-IS (A)
RDS(ON) (mΩ)
1
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
60
125°C
50
1.0E-03
1.0E-04
40
30
25°C
1.0E-05
25°C
1.0E-06
20
3
4
5
6
7
8
9
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AO4607
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
10
1250
Capacitance (pF)
8
-VGS (Volts)
1500
VDS=-15V
ID=-6A
6
4
2
Ciss
1000
750
500
Coss
0
0
4
8
12
16
0
20
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
10µs
100µs
RDS(ON)
limited
0.1s
1ms
1s
25
30
TJ(Max)=150°C
TA=25°C
20
DC
0.1
1
10
100
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
20
10
10s
0.1
15
30
10ms
1.0
10
40
TJ(Max)=150°C, TA=25°C
10.0
5
-VDS (Volts)
Figure 8: Capacitance Characteristics
Power (W)
-ID (Amps)
100.0
ZθJA Normalized Transient
Thermal Resistance
Crss
250
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
0.01
T
100
1000