AO4704 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4704 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics.This device is suitable for use as a synchronous switch in PWM applications. The co-packaged Schottky Diode boosts efficiency further. AO4704 is Pb-free (meets ROHS & Sony 259 specifications). AO4704L is a Green Product ordering option. AO4704 and AO4704L are electrically identical. VDS (V) = 30V ID = 13 A (VGS = 10V) RDS(ON) < 11.5mΩ (VGS = 10V) RDS(ON) < 13mΩ (VGS = 4.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.5V@1A SOIC-8 S/A S/A S/A G 1 2 3 4 8 7 6 5 D/K D/K D/K D/K Pulsed Diode Forward Current Power Dissipation K S A G Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter MOSFET V DS Drain-Source Voltage 30 VGS Gate-Source Voltage ±12 TA=25°C 13 ID Continuous Drain CurrentA TA=70°C 10.4 IDM Pulsed Drain Current B 40 V Schottky reverse voltage KA TA=25°C TA=70°C Continuous Forward CurrentA D IF IFM B TA=25°C TA=70°C Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. Schottky Units V V A 30 4.4 3.2 PD 3.1 2 30 3.1 2 TJ, TSTG -55 to 150 -55 to 150 V A W °C AO4704 Thermal Characteristics Parameter A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient C Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Thermal Characteristics: Schottky Parameter A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient C Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Symbol RθJA RθJL Typ 28 54 21 Max 40 75 30 Units °C/W °C/W °C/W Typ 36 67 25 Max 40 75 30 Units °C/W °C/W °C/W 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately. Rev5: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. AO4704 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 30 Typ Max VR=30V VR=30V, TJ=125°C 0.007 0.05 3.2 10 mA VR=30V, TJ=150°C 12 20 100 nA 1.1 2 V 9.1 11.5 13.3 16.5 10.5 13 IDSS Zero Gate Voltage Drain Current. (Set by Schottky leakage) IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.6 ID(ON) On state drain current VGS=4.5V, VDS=5V 40 VGS=10V, ID=13A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=12.2A gFS Forward Transconductance VSD Diode + Schottky Forward Voltage IS=1A,VGS=0V Maximum Body-Diode + Schottky Continuous Current IS VDS=5V, ID=13A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance (FET+Schottky) Crss Reverse Transfer Capacitance Rg Gate resistance 30 V A 37 3656 V 5 A 4050 pF VGS=0V, VDS=0V, f=1MHz 0.86 1.1 30.5 36 pF 168 VGS=10V, VDS=15V, ID=13A Gate Source Charge Qgd Gate Drain Charge 8.6 tD(on) Turn-On DelayTime 6.2 VGS=10V, VDS=15V, RL=1.1Ω, RGEN=0Ω tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode+Schottky Reverse Recovery Time IF=13A, dI/dt=100A/µs Qrr Body Diode+Schottky Reverse Recovery Charge IF=13A, dI/dt=100A/µs mΩ 0.5 322 Qgs mΩ S 0.45 VGS=0V, VDS=15V, f=1MHz SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Units pF 4.6 Ω nC nC nC 9 ns 4.8 7 ns 55 75 ns 7.3 11 ns 20.3 25 8.4 12.5 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately Rev5: August 2005. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4704 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 60 VGS=5V 50 25 VGS =2.5V 20 ID(A) ID(A) 40 30 20 125°C 15 10 VGS =2.0V 10 25°C 5 0 0 0 1 2 3 4 5 0.0 0.5 VDS(Volts) 1.5 2.0 2.5 3.0 VGS(Volts) Figure 2: Transfer Characteristics Figure 1: On-Regions Characteristics 1.8 13 ID=13A Normalize ON-Resistance 12 RDS(ON)(mΩ) 1.0 VGS =4.5V 11 10 9 VGS =10V 8 1.6 VGS=4.5V 1.4 VGS=10V 1.2 1.0 7 0 5 10 15 20 25 30 0.8 0 ID(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 30 1E+01 ID=13A 25 1E+00 125°C 20 125°C IS(A) RDS(ON)(mΩ) 25 15 10 1E-01 25°C 1E-02 25°C FET+SCHOTTKY 5 1E-03 0.0 0 0 2 4 6 8 VGS(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 0.2 0.4 0.6 0.8 VSD(Volts) Figure 6: Body-Diode Characteristics (Note F) 1.0 AO4704 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 10000 VDS=15V ID=13A Ciss Capacitance (pF) VGS(Volts) 4 3 2 1000 Coss FET+SCHOTTKY 1 Crss 100 0 0 10 20 30 0 40 100 ID(A) 0.1s 1s 1 0.1 1ms Power (W) 10ms 10s T J(Max) =150°C T A =25°C 0.1 ZθJA Normalized Transient Thermal Resistance 25 30 30 20 10 100 0 0.01 VDS(Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 20 10 DC 1 15 40 100µs 10 10 50 10µs RDS(ON) limited 5 VDS(Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics D=T on/T T J,PK =T A+PDM.ZθJA.RθJA RθJA=40°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 T on T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (S) Figure 11: Normalized Maximum Transient Thermal Impedence Alpha & Omega Semiconductor, Ltd. 100 1000