A-POWER AP04N70BF-A

AP04N70BF-A
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Dynamic dv/dt Rating
D
▼ Repetitive Avalanche Rated
▼ Fast Switching
650V
RDS(ON)
2.4Ω
ID
G
▼ Simple Drive Requirement
▼ RoHS Compliant
BVDSS
4A
S
Description
AP04N70 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications. TO-220FM
type provide high blocking voltage to overcome voltage surge and sag
in the toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.
G
D
TO-220FM
S
The TO-220FM package is universally preferred for all commercial-industrial
applications. The device is suited for switch mode power supplies ,DC-AC
converters and high current high speed switching circuits.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage
±30
V
[email protected]=25℃
Continuous Drain Current, V GS @ 10V
4
A
[email protected]=100℃
Continuous Drain Current, V GS @ 10V
2.5
A
15
A
33
W
0.26
W/℃
100
mJ
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
Linear Derating Factor
2
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
4
A
EAR
Repetitive Avalanche Energy
4
mJ
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
3.8
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
65
℃/W
Data & specifications subject to change without notice
200704051-1/4
AP04N70BF-A
o
Electrical [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
VGS=0V, ID=1mA
Min.
Typ.
Max. Units
650
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.6
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=2A
-
-
2.4
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=2A
-
2.5
-
S
VDS=600V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=480V,VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS=±30V
-
-
±100
nA
ID=4A
-
16.7
-
nC
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=480V
-
4.1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
4.9
-
nC
3
td(on)
Turn-on Delay Time
VDD=300V
-
11
-
ns
tr
Rise Time
ID=4A
-
8.3
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
23.8
-
ns
tf
Fall Time
RD=75Ω
-
8.2
-
ns
Ciss
Input Capacitance
VGS=0V
-
950
-
pF
Coss
Output Capacitance
VDS=25V
-
65
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
6
-
pF
Min.
Typ.
-
-
4
A
-
-
15
A
-
-
1.5
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=1.5V
Continuous Source Current ( Body Diode )
1
Pulsed Source Current ( Body Diode )
Forward On Voltage
3
Tj=25℃, IS=4A, VGS=0V
Max. Units
Notes:
1.Pulse width limited by safe operating area.
o
2.Starting Tj=25 C , VDD=50V , L=25mH , RG=25Ω , IAS=4A.
3.Pulse width <300us , duty cycle <2%.
2/4
AP04N70BF-A
1.8
2.5
10V
6.0V
5.0V
ID , Drain Current (A)
T C =150 o C
ID , Drain Current (A)
T C =25 o C
2
1.5
4.5V
1
10V
6.0V
5.0V
1.2
4.5V
0.6
4.0V
0.5
V G =3.5V
V G =4.0V
0
0
0
2
4
6
0
8
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
6
9
12
Fig 2. Typical Output Characteristics
3
1.2
I D =2A
V G =10V
Normalized RDS(ON)
1.1
Normalized BVDSS (V)
3
V DS , Drain-to-Source Voltage (V)
1
2
1
0.9
0.8
0
-50
0
50
100
150
-50
o
0
50
100
150
T j , Junction Temperature ( o C )
T j , Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
100
5
4
IS (A)
T j =150 o C
VGS(th) (V)
10
T j = 25 o C
3
1
2
0.1
1
0
0.2
0.4
0.6
0.8
1
V SD (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP04N70BF-A
f=1.0MHz
16
10000
12
C iss
V DS =320V
V DS =400V
V DS =480V
C (pF)
VGS , Gate to Source Voltage (V)
I D =4A
8
100
C oss
4
C rss
0
1
0
5
10
15
20
1
25
6
11
Q G , Total Gate Charge (nC)
16
21
26
31
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthjc)
Duty factor=0.5
10
ID (A)
10us
100us
1
1ms
10ms
100ms
0.1
T c =25 o C
Single Pulse
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
0.01
1
10
100
1000
10000
0.00001
0.0001
V DS (V)
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4