A-POWER AP09N90W

AP09N90W
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Repetitive Avalanche Rated
▼ Fast Switching
▼ Simple Drive Requirement
G
BVDSS
900V
RDS(ON)
1.2Ω
ID
8.6A
S
Description
AP09N90 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications. TO- 3P type
provide high blocking voltage to overcome voltage surge and sag in the
toughest power system with the best combination of fast switching,
ruggedized design and cost-effectiveness.
G
D
TO-3P
S
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
900
V
VGS
Gate-Source Voltage
± 30
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
8.6
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
5
A
1
IDM
Pulsed Drain Current
30
A
[email protected]=25℃
Total Power Dissipation
240
W
1.92
W/℃
Linear Derating Factor
2
EAS
Single Pulse Avalanche Energy
92
mJ
IAR
Avalanche Current
5.2
A
EAR
Repetitive Avalanche Energy
8.6
mJ
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-c
Thermal Resistance Junction-case
Max.
0.52
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
40
℃/W
Data & specifications subject to change without notice
200714032
AP09N90W
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
900
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.67
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=4.5A
-
-
1.2
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=4.5A
-
11.5
-
S
VDS=900V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=720V, VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS= ± 30V
-
-
±100
nA
ID=8.6A
-
67.1
120
nC
VGS=0V, ID=1mA
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=540V
-
17
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
19.9
-
nC
VDD=450V
-
25.8
-
ns
3
td(on)
Turn-on Delay Time
tr
Rise Time
ID=5A
-
10.3
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
305.2
-
ns
tf
Fall Time
RD=90Ω
-
536
-
ns
Ciss
Input Capacitance
VGS=0V
-
4087 6000
pF
Coss
Output Capacitance
VDS=25V
-
221
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
51
-
pF
Min.
Typ.
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
Pulsed Source Current ( Body Diode )
3
Forward On Voltage
1
Tj=25℃, IS=8.6A, VGS=0V
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25oC , VDD=50V , L=6.8mH , RG=25Ω , IAS=5.2A.
3.Pulse width <300us , duty cycle <2%.
-
8.6
A
-
-
30
A
-
-
1.5
V
VD=VG=0V , VS=1.5V
Continuous Source Current ( Body Diode )
Max. Units
AP09N90W
21
10
10V
5.5V
o
T C =25 C
10V
5.0V
4.5V
T C =150 o C
ID , Drain Current (A)
ID , Drain Current (A)
8
14
5.0V
7
6
4
V GS = 4.0 V
2
V GS =10V
0
0
0
10
20
30
40
0
V DS , Drain-to-Source Voltage (V)
12
24
36
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3
1.3
1.1
Normalized RDS(ON)
Normalized BVDSS (V)
I D =4.5A
V GS =10V
0.9
2
1
0
0.7
-50
0
50
100
T j , Junction Temperature (
o
-50
150
Fig 3. Normalized BV DSS v.s. Junction
100
150
10
3
VGS(th) (V)
4
IS (A)
50
Fig 4. Normalized On-Resistance
100
T j = 150 o C
0
T j , Junction Temperature ( o C )
C)
T j = 25 o C
1
2
1
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP09N90W
f=1.0MHz
10000
14
I D =8.6A
Ciss
V DS =180V
V DS =360V
V DS =540V
10
8
C (pF)
VGS , Gate to Source Voltage (V)
12
6
Coss
100
Crss
4
2
0
1
0
10
20
30
40
50
60
70
80
90
1
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
100
10us
10
ID (A)
100us
1ms
1
10ms
T C =25 o C
Single Pulse
DC
Duty Factor = 0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Single Pulse
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
0.1
1
10
100
1000
10000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q