A-POWER AP25G45EM

AP25G45EM
Advanced Power
Electronics Corp.
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
▼ High Input Impedance
▼ High Pick Current Capability
C
▼ 4.5V Gate Drive
▼ Strobe
Flash Applications
S
VCE
450V
ICP
150A
C
C
C
C
G
G
E
SO-8
E
E
E
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VCE
Collector-Emitter Voltage
450
V
VGE
Gate-Emitter Voltage
±6
V
VGEP
Pulsed Gate-Emitter Voltage
±8
V
Pulsed Collector Current
150
A
Maximum Power Dissipation
2.5
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
ICP
[email protected]=25℃
1
Electrical [email protected]=25oC(unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Units
-
-
10
uA
IGES
Gate-Emitter Leakage Current
Test Conditions
VGE=± 6V, VCE=0V
ICES
Collector-Emitter Leakage Current (Tj=25℃)
VCE=450V, VGE=0V
-
-
10
uA
VCE(sat)
Collector-Emitter Saturation Voltage
VGE=4.5V, ICP=150A (Pulsed)
-
6
8
V
VGE(th)
Gate Threshold Voltage
VCE=VGE, IC=250uA
0.35
-
1.2
V
Qg
Total Gate Charge
IC=50A
-
64.5
-
nC
Qge
Gate-Emitter Charge
VCE=360V
-
7
-
nC
Qgc
Gate-Collector Charge
VGE=5V
-
30
-
nC
td(on)
Turn-on Delay Time
VCC=225V
-
11.5
-
ns
tr
Rise Time
IC=50A
-
24.5
-
ns
td(off)
Turn-off Delay Time
RG=25Ω
-
150
-
ns
tf
Fall Time
VGE=5V
-
3.3
-
µs
Cies
Input Capacitance
VGE=0V
-
2227
-
pF
Coes
Output Capacitance
VCE=25V
-
200
-
pF
Reverse Transfer Capacitance
f=1.0MHz
-
79
-
pF
-
-
50
℃/W
Cres
RthJA
1
Thermal Resistance Junction-Ambient
Notes:
1.Surface mounted on 1 in2 copper pad of FR4 board ; 125℃/W when mounted on Min. copper pad.
Data and specifications subject to change without notice
200507032
AP25G45EM
140
180
T A =25 o C
ID , Drain Current (A)
140
120
3.0V
100
80
60
2.0V
40
5.0V
4.5V
4.0V
T A =150 o C
120
IC , Collector Current (A)
160
5.0V
4.5V
4.0V
100
3.0V
80
60
2.0V
40
20
20
VG=1.0V
VG=1.0V
0
0
0
2
4
6
8
0
10
2
Fig 1. Typical Output Characteristics
8
10
12
10
V GE =4.5V
VCE(sat),Saturation Voltage(V)
V CE =4.5V
25 ℃
70 ℃
125 ℃
T A =150 ℃
120
80
40
I C =130A
8
6
I C =100A
4
I C =50A
2
0
0
0
1
2
3
4
5
0
6
20
40
60
80
100
120
140
160
Junction Temperature ( o C)
V GE , Cate-Emitter Voltage (V)
Fig 3. Collector Current v.s.
Gate-Emitter Voltage
Fig 4. Collector- Emitter Saturation Voltage
v.s. Junction Temperature
200
ICP, Peak Collector Current (A)
1.5
1.2
VGE(th) (V)
6
Fig 2. Typical Output Characteristics
160
IC , Collector Current(A)
4
V CE , Collector-Emitter Voltage (V)
V CE , Collector-Emitter Voltage (V)
0.9
0.6
0.3
0
160
120
80
40
0
-50
0
50
Junction Temperature (
100
o
C)
Fig 5. Gate Threshold Voltage
v.s. Junction Temperature
150
0
1
2
3
4
5
6
V GE , Gate-to-Emitter Voltage (V)
Fig 6. Minimum Gate Drive Area
7
AP25G45EM
f=1.0MHz
10000
12
VGE , Gate -Emitter Voltage (V)
11
Capacitance (pF)
Cies
1000
Coes
100
Cres
I CP =50A
V CC =360V
10
9
8
7
6
5
4
3
2
1
0
10
1
5
9
13
17
21
25
29
0
30
Fig 7. Typical Capacitance Characterisitics
60
90
120
150
Q G , Gate Charge (nC)
VCE, Collector-Emitter Voltage (V)
Fig 8. Gate Charge Waveform
VCE
RC
90%
TO THE
OSCILLOSCOPE
C VCE
G
RG
225 V
10%
E
VGE
+
-
5V
VGE
td(on) tr
Fig 9. Switching Time Test Circuit
td(off) tf
Fig 10. Switching Time Waveform
VCE
TO THE
OSCILLOSCOPE
C
Flasher
Vtrig
G
300V
E
CM
RG
V GE
+
_
IGBT
+
-
1~3mA
IG
VG
IC
VCM = 300V
CM =100uF
Fig 11. Gate Charge Test Circuit
ICP = 150A
VG =5V
Fig 12. Application Test Circuit
VCM