A-POWER AP3302J

AP3302H/J
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Simple Drive Requirement
▼ Fast Switching
BVDSS
25V
RDS(ON)
50mΩ
ID
G
16A
S
Description
G
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP3302J) is available for low-profile applications.
G
D
D S
TO-252(H)
S
TO-251(J)
Rating
Units
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
25
V
VGS
Gate-Source Voltage
± 20
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
16
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
10
A
1
IDM
Pulsed Drain Current
25
A
[email protected]=25℃
Total Power Dissipation
20
W
Linear Derating Factor
0.16
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal Resistance Junction-case
Max.
6.4
℃/W
Rthj-amb
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data & specifications subject to change without notice
200701031
AP3302H/J
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Min.
Typ.
25
-
-
V
VGS=10V, ID=8A
-
-
50
mΩ
VDS=VGS, ID=250uA
2
-
4
V
VDS=25V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=20V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= ± 20V
-
-
±100
nA
ID=10A
-
7.4
13
nC
Drain-Source Breakdown Voltage
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
VGS=0V, ID=250uA
2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS= 24V
-
2.2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
4.2
-
nC
VDS=15V
-
8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=16A
-
7.4
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
11
-
ns
tf
Fall Time
RD=0.94Ω
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
164
290
pF
Coss
Output Capacitance
VDS=25V
-
158
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
62
-
pF
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=16A, VGS=0V
-
-
1.3
V
trr
Reverse Recovery Time
IS=16A, VGS=0V,
-
29
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
21
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP3302H/J
25
11
T c =25 o C
10V
10V
9.0V
8.0V
9
20
8
9.0V
ID , Drain Current (A)
ID , Drain Current (A)
T c =150 o C
10
15
8.0V
10
7.0V
5
7
6
7.0V
5
4
3
2
V G =5.0V
V G =5.0V
1
0
0
0
1
2
3
4
5
6
0
1
2
3
4
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
30
1.8
I D =20A
V G =10V
Normalized RDS(ON)
1.6
PD (W)
20
10
1.4
1.2
1.0
0.8
0.6
0
0
50
100
-50
150
o
0
50
100
150
o
T j , Junction Temperature ( C)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
100
5
4.5
10
o
T j =25 C
VGS(th) (V)
IS (A)
4
T j =150 o C
1
3.5
3
0.1
2.5
2
0.01
-50
0
0.4
0.8
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
0
50
100
150
1.6
T j ,Junction Temperature (
o
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
AP3302H/J
f=1.0MHz
25
1000
20
V DS =20V
V DS =16V
V DS =12V
15
Ciss
C (pF)
VGS , Gate to Source Voltage (V)
I D =10A
Coss
100
10
Crss
5
0
10
0
2
4
6
8
10
12
1
5
9
Fig7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
100
10
ID (A)
13
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
10ms
100ms
1s
DC
1
0.1
T c =25 o C
Single Pulse
0.01
DUTY=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q