AP40T03GI
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼ Low Gate Charge
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Single Drive Requirement
▼ Lower On-resistance
30V
RDS(ON)
25mΩ
ID
G
▼ RoHS Compliant
BVDSS
28A
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM
TO-252 package
isolation
is universally
package preferred
is universally
for all
preferred
commercialfor all
industrial surface mount
commercial-industrial
through
applications
hole applications.
and suited for low voltage
G D
S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±25
V
ID@TA=25℃
Continuous Drain Current, VGS @ 10V
28
A
ID@TA=100℃
Continuous Drain Current, VGS @ 10V
18
A
95
A
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
25
W
Linear Derating Factor
0.2
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
5
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
℃/W
Data and specifications subject to change without notice
201121051-1/4
AP40T03GI
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max. Units
30
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.02
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=18A
-
-
25
mΩ
VGS=4.5V, ID=14A
-
-
45
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=18A
-
16
-
S
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (T j=150 C)
VDS=24V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= ±25V
-
-
±100
nA
ID=18A
-
9
15
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
IDSS
Drain-Source Leakage Current (T j=25 C)
o
IGSS
2
VGS=0V, ID=250uA
Min.
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=25V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
6
-
nC
VDS=15V
-
7
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=18A
-
56
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
16
-
ns
tf
Fall Time
RD=0.83Ω
-
5
-
ns
Ciss
Input Capacitance
VGS=0V
-
610
980
pF
Coss
Output Capacitance
VDS=25V
-
160
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
117
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.5
2.3
Ω
Min.
Typ.
IS=18A, VGS=0V
-
-
1.3
V
IS=14A, VGS=20V
-
20
-
ns
dI/dt=100A/µs
-
10
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4
AP40T03GI
100
80
o
T C =150 C
10V
7 .0V
7 .0V
60
ID , Drain Current (A)
80
ID , Drain Current (A)
10V
o
T C =25 C
60
5 .0V
40
4.5V
5 .0V
4.5V
40
20
20
V G =3.0V
V G = 3 . 0V
0
0
0.0
2.0
4.0
6.0
0.0
2.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
6.0
Fig 2. Typical Output Characteristics
2.0
60
I D =18A
V G =10V
I D =14A
o
1.6
T A =25 C
Normalized RDS(ON)
45
RDS(ON) (mΩ )
4.0
V DS , Drain-to-Source Voltage (V)
30
1.2
0.8
15
0.4
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
14
2.5
12
2.0
T j =150 o C
IS(A)
8
Normalized VGS(th) (V)
10
T j =25 o C
6
4
1.5
1.0
2
0
0.5
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP40T03GI
f=1.0MHz
16
1000
C iss
12
V DS =15V
V DS =20V
V DS =25V
8
C (pF)
VGS , Gate to Source Voltage (V)
I D =18A
C oss
4
C rss
100
0
0
4
8
12
16
1
20
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1000
Normalized Thermal Response (Rthjc)
Duty factor = 0.5
ID (A)
100
100us
10
1ms
10ms
100ms
1s
DC
1
o
T C =25 C
Single Pulse
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0
0.1
1
10
100
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
40
VG
ID , Drain Current (A)
V DS =5V
30
T j =25 o C
QG
T j =150 o C
4.5V
QGS
20
QGD
10
Charge
Q
0
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4