A-POWER AP90T03GR

AP90T03GR
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower On- resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
BVDSS
30V
RDS(ON)
4mΩ
ID
G
75A
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-262(R)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±20
V
[email protected]=25℃
Continuous Drain Current, [email protected]
75
A
[email protected]=100℃
Continuous Drain Current, [email protected]
63
A
350
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
96
W
Linear Derating Factor
0.7
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
1.3
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
℃/W
Data and specifications subject to change without notice
200120041
AP90T03GR
Electrical [email protected] j=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
30
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.02
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=45A
-
-
4
mΩ
VGS=4.5V, ID=30A
-
-
6
mΩ
0.8
-
3
V
VDS=10V, ID=30A
-
55
-
S
Drain-Source Leakage Current (Tj=25 C)
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=150oC)
VDS=24V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= ±20V
-
-
±100
nA
ID=40A
-
60
96
nC
VDS=24V
-
8.5
-
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
VDS=VGS, ID=250uA
o
IDSS
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VGS=0V, ID=1mA
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
38
-
nC
td(on)
Turn-on Delay Time2
VDS=15V
-
14
-
ns
tr
Rise Time
ID=30A
-
83
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
66
-
ns
tf
Fall Time
RD=0.5Ω
-
120
-
Ciss
Input Capacitance
VGS=0V
-
4090 6540
pF
Coss
Output Capacitance
VDS=25V
-
1010
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
890
-
pF
Min.
Typ.
ns
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
V
VSD
Forward On Voltage
IS=45A, VGS=0V
-
-
1.3
trr
Reverse Recovery Time
IS=30A, VGS=0V,
-
51
-
ns
-
nC
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
dI/dt=100A/µs
-
63
AP90T03GR
200
160
o
10V
7.0V
5.0V
4.5V
ID , Drain Current (A)
160
T C = 1 50 o C
140
ID , Drain Current (A)
T C =25 C
120
V G =3.0V
80
10V
7.0V
5.0V
4.5V
120
100
V G =3.0V
80
60
40
40
20
0
0
0
1
2
0
3
1
Fig 1. Typical Output Characteristics
3
4
5
Fig 2. Typical Output Characteristics
2.0
5.0
1.8
I D =20A
o
Normalized R DS(ON)
T C =25 C
RDS(ON) (mΩ )
2
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
4.5
I D = 45 A
V G =10V
1.5
1.3
1.0
0.8
4.0
0.5
0.3
0.0
3.5
2
4
6
8
-50
10
Fig 3. On-Resistance v.s. Gate Voltage
2
15
1.5
T j =25 o C
VGS(th) (V)
Is (A)
50
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20
T j =150 o C
0
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
10
1
0.5
5
0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1
-50
25
100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
175
AP90T03GR
f=1.0MHz
14
10000
I D = 40 A
VGS , Gate to Source Voltage (V)
12
V DS =15V
V DS =20V
V DS =24V
10
C iss
C (pF)
8
6
C oss
1000
C rss
4
2
0
100
0
20
40
60
80
100
120
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
ID (A)
100
1ms
10
10ms
T c =25 o C
Single Pulse
100ms
DC
Normalized Thermal Response (R thjc)
1000
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.01
1
0.1
1
10
100
0.00001
0.0001
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q