A-POWER AP9915GK

AP9915GK
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower Gate Charge
▼ Fast Switching Characteristic
20V
RDS(ON)
50mΩ
ID
S
▼ RoHS Compliant
BVDSS
6.2A
D
SOT-223
G
Description
D
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Rating
Units
20
V
±12
V
Continuous Drain Current
3
6.2
A
Continuous Drain Current
3
5
A
30
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
3.2
W
Linear Derating Factor
0.025
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
40
℃/W
200615051-1/4
AP9915GK
o
Electrical [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max. Units
20
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.03
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=4.5V, ID=6A
-
-
50
mΩ
VGS=2.5V, ID=4A
-
-
80
mΩ
0.5
-
1.2
V
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VDS=VGS, ID=250uA
VDS=10V, ID=5A
-
13
-
S
o
VDS=20V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=16V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±12V
-
-
±100
nA
ID=10A
-
5
8
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=250uA
Min.
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=16V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
2
-
nC
2
td(on)
Turn-on Delay Time
VDS=10V
-
8
-
ns
tr
Rise Time
ID=10A
-
55
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=5V
-
10
-
ns
tf
Fall Time
RD=1Ω
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
360
580
pF
Coss
Output Capacitance
VDS=20V
-
70
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
50
-
pF
Rg
Gate Resistance
f=1.0MHz
-
0.78
-
Ω
Min.
Typ.
IS=2.5A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
17
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
9
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2
3.t≦10sec , Surface mounted on 1 in copper pad of FR4 board.
2/4
AP9915GK
50
40
o
T A =25 C
T A =150 o C
ID , Drain Current (A)
ID , Drain Current (A)
4.5V
40
30
3.5V
20
2.5V
30
4.5V
20
3.5V
10
2.5V
10
V G =1.5V
V G =1.5V
0
0
0
1
2
3
4
0
5
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
80
1.8
ID=4A
I D =6A
T A =25 o C
1.6
Normalized RDS(ON)
70
RDS(ON) (mΩ)
1
V DS , Drain-to-Source Voltage (V)
60
50
V G =4.5V
1.4
1.2
1.0
20
40
0.8
0.6
30
1
2
3
4
5
-50
6
V GS , Gate-to-Source Voltage (V)
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
0.95
VGS(th) (V)
1.2
IS (A)
100
T j , Junction Temperature ( C)
100
1
T j =150 C
50
o
Fig 3. On-Resistance v.s. Gate Voltage
o
0
o
T j =25 C
0.7
0.45
0.1
0.2
0.01
0
0.4
0.8
V SD , Source -to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP9915GK
f=1.0MHz
1000
I D =6A
12
C iss
V DS =16V
V DS =12V
V DS =10V
10
8
C (pF)
VGS , Gate to Source Voltage (V)
14
6
100
C oss
C rss
4
2
10
0
0
2
4
6
8
10
12
1
14
5
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthja)
100
10
1ms
ID (A)
9
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
1
0.1
10ms
100ms
1s
10s
DC
T A =25 o C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
Single Pulse
t
0.01
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=90 oC/W Per Unit Base
0.001
0.01
0.1
1
10
100
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4